Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
APT1001R6BFLL
[ADPOW]
POWER MOS 7 R FREDFET; 功率MOS 7 R FREDFET
元器件型号：
APT1001R6BFLL
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
POWER MOS 7 R FREDFET
功率MOS 7 R FREDFET
PDF文件：
总5页 (文件大小：153K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1001R6BFLL参数
查看货源
APT1001R6BFLLG
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R6BLL
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R6BLL
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1001R6BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
47
ADPOW
APT1001R6BN-BUTT
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1001R6BN-GULLWING
8A, 1000V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R6SFLL
POWER MOS 7 R FREDFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
32
ADPOW
APT1001R6SFLLG
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R6SLL
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
MICROSEMI
APT1001R6SLL
Power Field-Effect Transistor, 8A I(D), 1000V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-2
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1001RAN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
20
ETC
APT1001RAN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
7
ADPOW
APT1001RBLC
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
47
ADPOW
APT1001RBN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
116
ADPOW
APT1001RBN-BUTT
11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
MICROSEMI
©2020 ICPDF网
联系我们和版权申明
ADVANCED POWER TECHNOLOGY 
