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APT1001RBLC [ADPOW]

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs; 功率MOS VI是新一代的低栅电荷，高电压的N沟道增强型功率MOSFET的

APT1001RBLC


元器件型号：	APT1001RBLC
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 功率MOS VI是新一代的低栅电荷，高电压的N沟道增强型功率MOSFET的晶体晶体管开关脉冲栅局域网
PDF文件：	总2页 (文件大小：38K)
下载文档：	下载PDF数据表文档文件
型号参数：APT1001RBLC参数

APT1001RBN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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116 ADPOW

APT1001RBN-BUTT

11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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2 MICROSEMI

APT1001RBN-GULLWING

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1001RBN-GULLWING

11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1001RBNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD

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26 ETC

APT1001RBNR-BUTT

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT1001RBNR-BUTT

11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT1001RBNR-GULLWING

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1001RBNR-GULLWING

11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1001RBVFR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD

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20 ETC

APT1001RBVFR

POWER MOS V FREDFET

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19 ADPOW

APT1001RBVFR

POWER MOS V FREDFET

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31 ADPOW

APT1001RBVFRG

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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1 MICROSEMI

APT1001RBVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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60 ADPOW

APT1001RBVRG

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

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