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元器件品牌
APT1001RBN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号：
APT1001RBN
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
晶体 晶体管 脉冲 高压 局域网 高电压电源
PDF文件：
总4页 (文件大小：54K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1001RBN参数
查看货源
APT1001RBN-BUTT
11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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2
MICROSEMI
APT1001RBN-GULLWING
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
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0
ADPOW
APT1001RBN-GULLWING
11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
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on line
156
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0
MICROSEMI
APT1001RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
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26
ETC
APT1001RBNR-BUTT
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
ADPOW
APT1001RBNR-BUTT
11A, 1000V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MICROSEMI
APT1001RBNR-GULLWING
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
ADPOW
APT1001RBNR-GULLWING
11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MICROSEMI
APT1001RBVFR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
Warning
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156
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20
ETC
APT1001RBVFR
POWER MOS V FREDFET
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19
ADPOW
APT1001RBVFR
POWER MOS V FREDFET
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31
ADPOW
APT1001RBVFRG
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Warning
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156
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1
MICROSEMI
APT1001RBVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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156
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60
ADPOW
APT1001RBVRG
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
MICROSEMI
APT1001RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
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156
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27
ETC
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