APT1001RSLC [ADPOW]

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs; 功率MOS VI是新一代的低栅电荷,高电压的N沟道增强型功率MOSFET的
APT1001RSLC
元器件型号: APT1001RSLC
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
功率MOS VI是新一代的低栅电荷,高电压的N沟道增强型功率MOSFET的

晶体 晶体管 功率场效应晶体管 开关 脉冲 栅
PDF文件: 总2页 (文件大小:38K)
下载文档:  下载PDF数据表文档文件
型号参数:APT1001RSLC参数

APT1001RSVFR

POWER MOS V FREDFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
22 ADPOW

APT1001RSVFR

POWER MOS V FREDFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
15 ADPOW

APT1001RSVR

100% Avalanche Tested

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
10 MICROSEMI

APT1001RSVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
40 ADPOW

APT1001RSVRG

100% Avalanche Tested

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
6 MICROSEMI

APT10021DFN

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
30 ETC

APT10021DN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
24 ETC

APT10021DN

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 ADPOW

APT10021JFLL

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
63 ADPOW

APT10021JFLL

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
27 ADPOW

APT10021JFLL_04

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 ADPOW

APT10021JLL

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
36 ADPOW

APT10021JLL

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
24 ADPOW

APT10021JLL_04

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
29 ADPOW

APT10025JLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
36 ADPOW