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元器件品牌
APT10026JN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号:
APT10026JN
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
高压 高电压电源
PDF文件:
总4页 (文件大小:67K)
下载文档:
下载PDF数据表文档文件
型号参数:APT10026JN参数
查看货源
APT10026JNR
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 33A I(D)
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19
ETC
APT10026L2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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ADPOW
APT10026L2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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73
ADPOW
APT10026L2FLL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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31
ADPOW
APT10026L2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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31
ADPOW
APT10026L2LL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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51
ADPOW
APT10026L2LL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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19
MICROSEMI
APT10026L2LL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
: Undefined variable $rtag in
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20
ADPOW
APT10026L2LLG
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Warning
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17
MICROSEMI
APT10026RKVR
Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs
Warning
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15
ETC
APT1002R4AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3
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12
ETC
APT1002R4BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
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156
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49
ADPOW
APT1002R4BN-GULLWING
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Warning
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156
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0
ADPOW
APT1002R4BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD
Warning
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156
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8
ETC
APT1002R4BNR-BUTT
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
ADPOW
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