关闭背景特效

APT10026L2LL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。

APT10026L2LL


元器件型号：	APT10026L2LL
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
PDF文件：	总5页 (文件大小：105K)
下载文档：	下载PDF数据表文档文件
型号参数：APT10026L2LL参数

APT10026L2LL_03

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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20 ADPOW

APT10026L2LLG

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

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17 MICROSEMI

APT10026RKVR

Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs

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15 ETC

APT1002R4AN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3

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12 ETC

APT1002R4BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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49 ADPOW

APT1002R4BN-GULLWING

Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1002R4BNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD

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8 ETC

APT1002R4BNR-BUTT

Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT1002R4BNR-GULLWING

Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT1002R4CN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO

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8 ETC

APT1002RAN

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6A I(D) | TO-3

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21 ETC

APT1002RBN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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49 ADPOW

APT1002RBN-BUTT

Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT1002RBN-GULLWING

暂无描述

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0 ADPOW

APT1002RBNR

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD

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14 ETC

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