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元器件品牌
APT1002R4BN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号：
APT1002R4BN
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
晶体 晶体管 功率场效应晶体管 脉冲 高压 局域网 高电压电源
PDF文件：
总4页 (文件大小：54K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1002R4BN参数
查看货源
APT1002R4BN-GULLWING
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
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0
ADPOW
APT1002R4BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD
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8
ETC
APT1002R4BNR-BUTT
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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: Undefined variable $rtag in
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156
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0
ADPOW
APT1002R4BNR-GULLWING
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
ADPOW
APT1002R4CN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO
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156
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8
ETC
APT1002RAN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6A I(D) | TO-3
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21
ETC
APT1002RBN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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49
ADPOW
APT1002RBN-BUTT
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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156
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0
ADPOW
APT1002RBN-GULLWING
暂无描述
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156
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0
ADPOW
APT1002RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD
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14
ETC
APT1002RBNR-GULLWING
暂无描述
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on line
156
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1
ADPOW
APT1002RCN
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
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156
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27
ADPOW
APT1002RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
Warning
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on line
156
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12
ETC
APT1002RDN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
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on line
156
-
0
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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156
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32
ADPOW
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