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元器件品牌
APT1002RCN
[ADPOW]
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N - 沟道增强型高压功率MOSFET
元器件型号：
APT1002RCN
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N - 沟道增强型高压功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源
PDF文件：
总4页 (文件大小：53K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1002RCN参数
查看货源
APT1002RDN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
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ETC
APT1002RDN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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0
ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT10030L2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT10030L2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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15
ADPOW
APT10030L2VFRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
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0
MICROSEMI
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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16
ADPOW
APT10030L2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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37
ADPOW
APT10030L2VR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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156
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17
ADPOW
APT10030L2VRG
Power Field-Effect Transistor, 33A I(D), 1000V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264MAX, 3 PIN
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156
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0
MICROSEMI
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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13
ADPOW
APT10035B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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44
ADPOW
APT10035B2FLL
Power MOS 7is a new generation of low loss, high voltage, N-Channel
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18
MICROSEMI
APT10035B2FLL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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156
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15
ADPOW
APT10035B2FLLG
Power Field-Effect Transistor, 28A I(D), 1000V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
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1
MICROSEMI
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