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APT10040B2VR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs; 功率MOS V是新一代高压N沟道增强型功率MOSFET
APT10040B2VR
元器件型号： APT10040B2VR
生产厂家： ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用：

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
功率MOS V是新一代高压N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 高压
PDF文件： 总4页 (文件大小：78K)
下载文档：  下载PDF数据表文档文件
型号参数：APT10040B2VR参数
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APT10040B2VR_02

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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9 ADPOW

APT10040B2VRG

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT10040CFN

 TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 24.5A I(D)

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8 ETC

APT10040DN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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15 ETC

APT10040LLC

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW

APT10040LVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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21 ADPOW

APT10040LVFR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 ADPOW

APT10040LVFR

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10040LVFRG

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10040LVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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24 ADPOW

APT10040LVR

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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39 ADPOW

APT10040LVR

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10040LVRG

 Power Field-Effect Transistor, 25A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10043

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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27 ADPOW

APT10043

 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 ADPOW
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