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元器件品牌
APT1004RKN
[ADPOW]
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
元器件型号：
APT1004RKN
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源
PDF文件：
总4页 (文件大小：55K)
下载文档：
下载PDF数据表文档文件
型号参数：APT1004RKN参数
查看货源
APT10050B2FLC
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
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APT10050B2LC
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APT10050B2LC
21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3
Warning
: Undefined variable $rtag in
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156
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0
MICROSEMI
APT10050B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT10050B2VFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
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26
ADPOW
APT10050B2VFR_04
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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16
ADPOW
APT10050B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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47
ADPOW
APT10050B2VRG
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
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on line
156
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MICROSEMI
APT10050CFN
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 24.5A I(D)
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22
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APT10050FN
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19
ETC
APT10050JLC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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33
ADPOW
APT10050JLC
Power Field-Effect Transistor, 19A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
ADPOW
APT10050JN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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165
ADPOW
APT10050JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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75
ADPOW
APT10050JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
37
ADPOW
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