关闭背景特效

APT10078BFLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。

APT10078BFLL


元器件型号：	APT10078BFLL
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲局域网
PDF文件：	总5页 (文件大小：203K)
下载文档：	下载PDF数据表文档文件
型号参数：APT10078BFLL参数

APT10078BFLL_06

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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22 ADPOW

APT10078BFLLG

Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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1 MICROSEMI

APT10078BLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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33 ADPOW

APT10078BLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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19 ADPOW

APT10078BLL_04

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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14 ADPOW

APT10078BLLG

暂无描述

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0 MICROSEMI

APT10078SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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15 ADPOW

APT10078SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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37 ADPOW

APT10078SFLL

Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT10078SFLLG

Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT10078SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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17 ADPOW

APT10078SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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13 ADPOW

APT10078SLLG

Power Field-Effect Transistor, 14A I(D), 1000V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT10086BLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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36 ADPOW

APT10086BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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68 ADPOW

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