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APT10090BLL_03 [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。

APT10090BLL_03


元器件型号：	APT10090BLL_03
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
PDF文件：	总5页 (文件大小：97K)
下载文档：	下载PDF数据表文档文件
型号参数：APT10090BLL_03参数

APT10090BLLG

暂无描述

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0 MICROSEMI

APT10090SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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13 ADPOW

APT10090SFLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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25 ADPOW

APT10090SFLL

Power Field-Effect Transistor, 12A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 ADPOW

APT10090SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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23 ADPOW

APT10090SLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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10 ADPOW

APT100DL60B

Ultrasoft Recovery Rectifi er Diode

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32 MICROSEMI

APT100DL60BG

Ultrasoft Recovery Rectifi er Diode

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53 MICROSEMI

APT100DL60HJ

ISOTOP Fast Diode Full Bridge Power Module

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24 MICROSEMI

APT100DL60S

Ultrasoft Recovery Rectifi er Diode

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8 MICROSEMI

APT100DL60SG

Ultrasoft Recovery Rectifi er Diode

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12 MICROSEMI

APT100F50J

N-Channel FREDFET

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30 MICROSEMI

APT100GF60B2R

The Fast IGBT is a new generation of high voltage power IGBTs.

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67 ADPOW

APT100GF60JR

The Fast IGBT is a new generation of high voltage power IGBTs.

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73 ADPOW

APT100GF60JRD

The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

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72 ADPOW

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