APT10M09B2VFR [ADPOW]

POWER MOS V FREDFET; 功率MOS V FREDFET
APT10M09B2VFR
元器件型号: APT10M09B2VFR
生产厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述和应用:

POWER MOS V FREDFET
功率MOS V FREDFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件: 总4页 (文件大小:149K)
下载文档:  下载PDF数据表文档文件
型号参数:APT10M09B2VFR参数

APT10M09B2VFR_04

POWER MOS V FREDFET

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15 ADPOW

APT10M09B2VFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT10M09B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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36 ADPOW

APT10M09LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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12 ADPOW

APT10M09LVFR

POWER MOS V FREDFET

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34 ADPOW

APT10M09LVFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT10M09LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT10M11B2VFR

High Voltage N-Channel enhancement mode power MOSFET

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36 ADPOW

APT10M11B2VFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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1 MICROSEMI

APT10M11B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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48 ADPOW

APT10M11B2VR

Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3

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0 ADPOW

APT10M11JVFR

High Voltage N-Channel enhancement mode power MOSFET

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28 ADPOW

APT10M11JVFR

High Voltage N-Channel enhancement mode power MOSFET

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12 ADPOW

APT10M11JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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42 ADPOW

APT10M11JVR

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET

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2 MICROSEMI