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元器件品牌
APT10M09B2VFR
[ADPOW]
POWER MOS V FREDFET; 功率MOS V FREDFET
元器件型号:
APT10M09B2VFR
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
POWER MOS V FREDFET
功率MOS V FREDFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件:
总4页 (文件大小:149K)
下载文档:
下载PDF数据表文档文件
型号参数:APT10M09B2VFR参数
查看货源
APT10M09B2VFR_04
POWER MOS V FREDFET
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ADPOW
APT10M09B2VFRG
Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
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156
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0
MICROSEMI
APT10M09B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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: Undefined variable $rtag in
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156
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36
ADPOW
APT10M09LVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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: Undefined variable $rtag in
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12
ADPOW
APT10M09LVFR
POWER MOS V FREDFET
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: Undefined variable $rtag in
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156
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34
ADPOW
APT10M09LVFRG
Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
MICROSEMI
APT10M09LVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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25
ADPOW
APT10M11B2VFR
High Voltage N-Channel enhancement mode power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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36
ADPOW
APT10M11B2VFRG
Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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1
MICROSEMI
APT10M11B2VR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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48
ADPOW
APT10M11B2VR
Power Field-Effect Transistor, 100A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
ADPOW
APT10M11JVFR
High Voltage N-Channel enhancement mode power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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28
ADPOW
APT10M11JVFR
High Voltage N-Channel enhancement mode power MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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12
ADPOW
APT10M11JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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42
ADPOW
APT10M11JVR
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
2
MICROSEMI
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