APT10M19SVR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。
APT10M19SVR
型号: APT10M19SVR
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
功率MOS V是新一代高压N沟道增强型功率MOSFET 。

晶体 晶体管 功率场效应晶体管 开关 脉冲 高压
文件: 总4页 (文件大小:74K)
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APT10M19SVRG

Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT10M20BLL

Power Field-Effect Transistor, 92A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT10M25

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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16 ADPOW

APT10M25

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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19 ADPOW

APT10M25

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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23 ADPOW

APT10M25BNFR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD

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15 ETC

APT10M25BNFR-BUTT

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT10M25BNFR-GULLWING

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT10M25BNR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD

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17 ETC

APT10M25BNR-BUTT

75A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT10M25BNR-GULLWING

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT10M25BNR-GULLWING

75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT10M25BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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70 ADPOW

APT10M25BVFRG

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

APT10M25BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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41 ADPOW