关闭背景特效

APT10M25BVFR [ADPOW]

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS V是新一代高压N沟道增强型功率MOSFET 。

APT10M25BVFR


元器件型号：	APT10M25BVFR
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 功率MOS V是新一代高压N沟道增强型功率MOSFET 。晶体晶体管开关脉冲高压局域网
PDF文件：	总4页 (文件大小：73K)
下载文档：	下载PDF数据表文档文件
型号参数：APT10M25BVFR参数

APT10M25BVFRG

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

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0 MICROSEMI

APT10M25BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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41 ADPOW

APT10M25SNR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-263AB

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17 ETC

APT10M25SVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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38 ADPOW

APT10M25SVRG

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3

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0 MICROSEMI

APT10M30AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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33 ADPOW

APT10M30BNFR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD

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15 ETC

APT10M30BNFR-GULLWING

Power Field-Effect Transistor, 67A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT10M30BNR

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD

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9 ETC

APT10M30BNR-BUTT

Power Field-Effect Transistor, 67A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ADPOW

APT10M30BNR-BUTT

67A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT10M30BNR-GULLWING

Power Field-Effect Transistor, 67A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

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0 ADPOW

APT10SC120B

Rectifier Diode,

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0 ADPOW

APT10SC120K

Rectifier Diode, Schottky, 1 Element, 10A, 1200V V(RRM)

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0 MICROSEMI

APT10SC120KCT

10A, 1200V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AB, TO-220, 3 PIN

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0 MICROSEMI

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