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元器件品牌
APT11GF120BRDQ1G
[ADPOW]
FAST IGBT & FRED; 快速IGBT和FRED
元器件型号：
APT11GF120BRDQ1G
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
FAST IGBT & FRED
快速IGBT和FRED
晶体 晶体管 双极性晶体管
PDF文件：
总9页 (文件大小：432K)
下载文档：
下载PDF数据表文档文件
型号参数：APT11GF120BRDQ1G参数
查看货源
APT11GF120KR
FAST IGBT
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45
ADPOW
APT11GF120KRG
Power Semiconductors Power Modules
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156
-
18
MICROSEMI
APT11GP60BDQB
POWER MOS 7 IGBT
Warning
: Undefined variable $rtag in
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156
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14
ADPOW
APT11GP60BDQB
POWER MOS 7 IGBT
Warning
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156
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28
ADPOW
APT11GP60BDQB
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Warning
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0
ADPOW
APT11GP60BDQBG
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
MICROSEMI
APT11GP60K
POWER MOS 7 IGBT
Warning
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156
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26
ADPOW
APT11GP60K
POWER MOS 7 IGBT
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156
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28
ADPOW
APT11GP60SA
POWER MOS 7 IGBT
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156
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22
ADPOW
APT11GP60SA
POWER MOS 7 IGBT
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156
-
16
ADPOW
APT11N80BC3
Super Junction MOSFET
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156
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14
ADPOW
APT11N80BC3
Super Junction MOSFET
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156
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21
ADPOW
APT11N80BC3G
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
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156
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0
MICROSEMI
APT11N80GC3
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
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0
MICROSEMI
APT11N80GC3
Power Field-Effect Transistor, 7.4A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
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0
ADPOW
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