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元器件品牌
APT11GP60BDQB
[ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
元器件型号:
APT11GP60BDQB
生产厂家:
ADVANCED POWER TECHNOLOGY
描述和应用:
POWER MOS 7 IGBT
功率MOS 7 IGBT
晶体 晶体管 功率控制 双极性晶体管 局域网
PDF文件:
总7页 (文件大小:210K)
下载文档:
下载PDF数据表文档文件
型号参数:APT11GP60BDQB参数
查看货源
APT11GP60BDQBG
Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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0
MICROSEMI
APT11GP60K
POWER MOS 7 IGBT
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156
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26
ADPOW
APT11GP60K
POWER MOS 7 IGBT
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156
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28
ADPOW
APT11GP60SA
POWER MOS 7 IGBT
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156
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22
ADPOW
APT11GP60SA
POWER MOS 7 IGBT
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156
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16
ADPOW
APT11N80BC3
Super Junction MOSFET
Warning
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156
-
14
ADPOW
APT11N80BC3
Super Junction MOSFET
Warning
: Undefined variable $rtag in
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156
-
21
ADPOW
APT11N80BC3G
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
Warning
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156
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0
MICROSEMI
APT11N80GC3
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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156
-
0
MICROSEMI
APT11N80GC3
Power Field-Effect Transistor, 7.4A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
Warning
: Undefined variable $rtag in
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156
-
0
ADPOW
APT11N80KC3
Super Junction MOSFET
Warning
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156
-
59
ADPOW
APT11N80KC3G
Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Warning
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156
-
0
MICROSEMI
AP-T12
Sealed against contamination when properly mounted
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156
-
0
GRAYHILL
APT-120
Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1:1
Warning
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156
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1
ABRACON
APT1201R2BFLL
POWER MOS 7 FREDFET
Warning
: Undefined variable $rtag in
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156
-
59
ADPOW
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