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APT11GP60K [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT

APT11GP60K


元器件型号：	APT11GP60K
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	POWER MOS 7 IGBT 功率MOS 7 IGBT 晶体晶体管功率控制双极性晶体管局域网
PDF文件：	总6页 (文件大小：169K)
下载文档：	下载PDF数据表文档文件
型号参数：APT11GP60K参数

APT11GP60SA

POWER MOS 7 IGBT

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22 ADPOW

APT11GP60SA

POWER MOS 7 IGBT

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16 ADPOW

APT11N80BC3

Super Junction MOSFET

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14 ADPOW

APT11N80BC3

Super Junction MOSFET

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21 ADPOW

APT11N80BC3G

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT11N80GC3

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 MICROSEMI

APT11N80GC3

Power Field-Effect Transistor, 7.4A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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0 ADPOW

APT11N80KC3

Super Junction MOSFET

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59 ADPOW

APT11N80KC3G

Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

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0 MICROSEMI

AP-T12

Sealed against contamination when properly mounted

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0 GRAYHILL

APT-120

Datacom Transformer, LAN; 10 BASE-T; ETHERNET Application(s), 1:1

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1 ABRACON

APT1201R2BFLL

POWER MOS 7 FREDFET

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59 ADPOW

APT1201R2BFLL

POWER MOS 7 FREDFET

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23 ADPOW

APT1201R2BFLLG

Power Field-Effect Transistor, 12A I(D), 1200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

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1 MICROSEMI

APT1201R2BLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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52 ADPOW

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