APT1201R4SLL [ADPOW]
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗,高电压,N沟道增强型功率MOSFET 。型号: | APT1201R4SLL |
厂家: | ADVANCED POWER TECHNOLOGY |
描述: | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
文件: | 总2页 (文件大小:73K) |
下载: | 下载PDF数据表文档文件 |
APT1201R5BVFR
POWER MOS VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
33
ADPOW
APT1201R5BVFR
POWER MOS VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
12
ADPOW
APT1201R5BVFRG
Power Field-Effect Transistor, 10A I(D), 1200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
APT1201R5BVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
53
ADPOW
APT1201R5SVFR
POWER MOS VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
28
ADPOW
APT1201R5SVFR
POWER MOS VWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
ADPOW
APT1201R6
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
28
ADPOW
APT1201R6
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
ADPOW
APT1201R6BVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
ADPOW
APT1201R6BVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
46
ADPOW
APT1201R6BVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
71
ADPOW
APT1201R6BVR
Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
ADPOW
APT1201R6BVR
Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
MICROSEMI
APT1201R6BVRG
Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
MICROSEMI
APT1201R6SVFR
POWER MOS V FREDFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
26
ADPOW
©2020 ICPDF网 联系我们和版权申明