关闭背景特效

APT12057JLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。

APT12057JLL


元器件型号：	APT12057JLL
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。晶体晶体管功率场效应晶体管开关脉冲局域网
PDF文件：	总2页 (文件大小：73K)
下载文档：	下载PDF数据表文档文件
型号参数：APT12057JLL参数

APT12057LFLL

POWER MOS 7 FREDFET

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17 ADPOW

APT12057LFLL

POWER MOS 7 FREDFET

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13 ADPOW

APT12057LFLL

Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW

APT12057LFLLG

Power Field-Effect Transistor, 22A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT12057LLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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35 ADPOW

APT-12057R

6000MHz - 12000MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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0 AGILENT

APT12060B2VFR

POWER MOS V

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20 ADPOW

APT12060B2VFR

POWER MOS V

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29 ADPOW

APT12060B2VFRG

Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX, 3 PIN

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0 MICROSEMI

APT12060B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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18 ADPOW

APT12060LVFR

POWER MOS V

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33 ADPOW

APT12060LVFR

POWER MOS V

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10 ADPOW

APT12060LVFRG

Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 MICROSEMI

APT12060LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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53 ADPOW

APT12060LVR

Power Field-Effect Transistor, 20A I(D), 1200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

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0 ADPOW

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