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元器件品牌
APT15GP60BDF1
[ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
元器件型号：
APT15GP60BDF1
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
POWER MOS 7 IGBT
功率MOS 7 IGBT
晶体 晶体管 功率控制 瞄准线 双极性晶体管 局域网
PDF文件：
总9页 (文件大小：130K)
下载文档：
下载PDF数据表文档文件
型号参数：APT15GP60BDF1参数
查看货源
APT15GP60BDL
Resonant Mode Combi IGBT
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6
MICROSEMI
APT15GP60BDLG
Resonant Mode Combi IGBT
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156
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23
MICROSEMI
APT15GP60BDQ1
POWER MOS 7 IGBT
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156
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28
ADPOW
APT15GP60BDQ1
POWER MOS 7 IGBT
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156
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24
ADPOW
APT15GP60BDQ1G
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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0
MICROSEMI
APT15GP60BG
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Warning
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156
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0
MICROSEMI
APT15GP60BSC
暂无描述
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0
MICROSEMI
APT15GP60K
POWER MOS 7 IGBT
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16
ADPOW
APT15GP60K
POWER MOS 7 IGBT
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156
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23
ADPOW
APT15GP60K
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Warning
: Undefined variable $rtag in
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156
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0
ADPOW
APT15GP60S
POWER MOS 7 IGBT
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22
MICROSEMI
APT15GP90B
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
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56
ADPOW
APT15GP90B
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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0
ADPOW
APT15GP90B_06
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs
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12
ADPOW
APT15GP90BDF1
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Warning
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0
ADPOW
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