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元器件品牌
APT20GT60KR
[ADPOW]
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.; 迅雷IGBT⑩是新一代高压功率IGBT的。
元器件型号：
APT20GT60KR
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
迅雷IGBT⑩是新一代高压功率IGBT的。
晶体 晶体管 功率控制 双极性晶体管 高压 栅 局域网
PDF文件：
总2页 (文件大小：29K)
下载文档：
下载PDF数据表文档文件
型号参数：APT20GT60KR参数
查看货源
APT20GT60KRG
Insulated Gate Bipolar Transistor, 43A I(C), 600V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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0
MICROSEMI
APT20M10JFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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ADPOW
APT20M10JLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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156
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46
ADPOW
APT20M11JFLL
POWER MOS 7 FREDFET
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156
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14
ADPOW
APT20M11JFLL
Volts:200V RDS(ON)0.011Ohms ID(cont):176Amps|FREDFETs ( fast body diode)
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22
ETC
APT20M11JFLL
POWER MOS 7 FREDFET
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39
ADPOW
APT20M11JLL
POWER MOS 7 MOSFET
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36
ADPOW
APT20M11JLL
Volts:200V RDS(ON):0.011Ohms ID(cont:)176Amps|MOSFETs
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9
ETC
APT20M11JLL
POWER MOS 7 MOSFET
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11
ADPOW
APT20M11JLL
Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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MICROSEMI
APT20M11JVFR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW
APT20M11JVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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63
ADPOW
APT20M120JCU2
ISOTOP® Boost chopper MOSFET + SiC chopper diode Power module
Warning
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156
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19
MICROSEMI
APT20M120JCU3
ISOTOP® Buck chopper MOSFET SiC chopper diode Power module
Warning
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156
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11
MICROSEMI
APT20M13PVR
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Warning
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ADPOW
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