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元器件品牌
APT25GP120B
[ADPOW]
POWER MOS 7 IGBT; 功率MOS 7 IGBT
元器件型号：
APT25GP120B
生产厂家：
ADVANCED POWER TECHNOLOGY
描述和应用：
POWER MOS 7 IGBT
功率MOS 7 IGBT
晶体 晶体管 功率控制 瞄准线 双极性晶体管 栅 局域网
PDF文件：
总6页 (文件大小：96K)
下载文档：
下载PDF数据表文档文件
型号参数：APT25GP120B参数
查看货源
APT25GP120B2D1
36A, 1200V, N-CHANNEL IGBT, TMAX-3
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0
MICROSEMI
APT25GP120BD1
Volts:1200V VF/Vce(ON):3.6V ID(cont):25Amps|Ultrafast IGBT Family
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ETC
APT25GP120BDF1
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel
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1
MICROSEMI
APT25GP120BDQ1
POWER MOS 7 IGBT
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54
ADPOW
APT25GP120BDQ1G
POWER MOS 7 IGBT
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64
ADPOW
APT25GP120BDQ1G
Power Semiconductors Power Modules
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MICROSEMI
APT25GP120BG
Power Semiconductors Power Modules
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156
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25
MICROSEMI
APT25GP90B
POWER MOS 7 IGBT
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26
ADPOW
APT25GP90B
POWER MOS 7 IGBT
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35
ADPOW
APT25GP90BDF1
POWER MOS 7 IGBT
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156
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83
ADPOW
APT25GP90BDQ1
POWER MOS 7 IGBT
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156
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51
ADPOW
APT25GP90BDQ1
POWER MOS 7 IGBT
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156
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20
ADPOW
APT25GP90BDQ1G
POWER MOS 7 IGBT
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16
ADPOW
APT25GP90BDQ1G
POWER MOS 7 IGBT
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64
ADPOW
APT25GP90BG
Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
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0
MICROSEMI
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