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APT30GP60BDQ1G [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT

APT30GP60BDQ1G


元器件型号：	APT30GP60BDQ1G
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	POWER MOS 7 IGBT 功率MOS 7 IGBT 晶体晶体管功率控制双极性晶体管局域网
PDF文件：	总9页 (文件大小：440K)
下载文档：	下载PDF数据表文档文件
型号参数：APT30GP60BDQ1G参数

APT30GP60BG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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1 MICROSEMI

APT30GP60BSC

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT30GP60BSC

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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0 MICROSEMI

APT30GP60JD1

Volts:600V VF/Vce(ON):2.7V ID(cont):32Amps|Ultrafast IGBT Family

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30 ETC

APT30GP60JD1

Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES

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0 MICROSEMI

APT30GP60JDQ1

POWER MOS 7 IGBT

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14 ADPOW

APT30GP60JDQ1

POWER MOS 7 IGBT

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36 ADPOW

APT30GP60JDQ1G

Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES

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0 MICROSEMI

APT30GP60LDL

Resonant Mode Combi IGBT

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6 MICROSEMI

APT30GP60LDLG

Resonant Mode Combi IGBT

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11 MICROSEMI

APT30GS60BRDL

Resonant Mode Combi IGBT

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24 MICROSEMI

APT30GS60BRDLG

Resonant Mode Combi IGBT

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11 MICROSEMI

APT30GS60BRDQ2

Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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6 MICROSEMI

APT30GS60BRDQ2G

Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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12 MICROSEMI

APT30GS60BRDQ2G

Power Semiconductors Power Modules

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2 MICROSEMI

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