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APT30GP60B [ADPOW]

POWER MOS 7 IGBT; 功率MOS 7 IGBT

APT30GP60B


元器件型号：	APT30GP60B
生产厂家：	ADVANCED POWER TECHNOLOGY
描述和应用：	POWER MOS 7 IGBT 功率MOS 7 IGBT 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
PDF文件：	总6页 (文件大小：94K)
下载文档：	下载PDF数据表文档文件
型号参数：APT30GP60B参数

APT30GP60B2DL

Resonant Mode Combi IGBT

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10 MICROSEMI

APT30GP60B2DLG

Resonant Mode Combi IGBT

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23 MICROSEMI

APT30GP60BD1

Volts:600V VF/Vce(ON):2.7V ID(cont):49Amps|Ultrafast IGBT Family

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24 ETC

APT30GP60BD1

Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel

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1 MICROSEMI

APT30GP60BDF1

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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2 ADPOW

APT30GP60BDQ1

POWER MOS 7 IGBT

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30 ADPOW

APT30GP60BDQ1

POWER MOS 7 IGBT

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51 ADPOW

APT30GP60BDQ1G

POWER MOS 7 IGBT

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59 ADPOW

APT30GP60BDQ1G

POWER MOS 7 IGBT

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41 ADPOW

APT30GP60BG

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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1 MICROSEMI

APT30GP60BSC

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT30GP60BSC

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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0 MICROSEMI

APT30GP60JD1

Volts:600V VF/Vce(ON):2.7V ID(cont):32Amps|Ultrafast IGBT Family

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30 ETC

APT30GP60JD1

Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES

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0 MICROSEMI

APT30GP60JDQ1

POWER MOS 7 IGBT

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14 ADPOW

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