PDI-E825

更新时间:2024-09-18 06:02:05
品牌:ADVANCEDPHOTONIX
描述:GaAlAs High Power IR LED Emitters

PDI-E825 概述

GaAlAs High Power IR LED Emitters GaAlAs的高功率红外LED发射器 红外 LED

PDI-E825 规格参数

是否无铅: 不含铅生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.14
Base Number Matches:1

PDI-E825 数据手册

通过下载PDI-E825数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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GaAlAs High Power IR LED Emitters  
PDI-E825  
Advanced Photonix, Inc.  
PACKAGE DIMENSIONS INCH [mm]  
C
L
45°  
1.00 [25.4] MIN  
0.040  
[1.02]  
C
L
0.145 [3.68]  
0.222 [5.64]  
Ø0.019 [0.48]  
Ø0.016 [0.41]  
C
L
Ø0.230 [5.84]  
L.E.D.  
0.100 [2.54]  
CATHODE  
C
L
ANODE AND CASE  
Ø0.255 [6.48]  
PLASTIC  
0.043 [1.09]  
0.040 [1.02]  
LENS CAP  
HEADER  
0.015 [0.38] SQ  
Ø0.004 [0.10]  
EMITTER AREA  
CATHODE  
TO-46 PACKAGE  
BOTTOM SIDE ANODE  
CHIP DIMENSIONS INCH [mm]  
FEATURES  
DESCRIPTION  
APPLICATIONS  
• High speed  
The PDI-E825 is a high power 850 nm GaAlAs  
point source infrared emitter packaged in a  
TO-46 metal header with a clear plastic lens cap.  
• Fiber optic source  
• Infrared sources  
• Optical readers  
• High reliability  
• Point source emission  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
RADIATION PATTERN  
UNITS  
SYMBOL PARAMETER  
MIN  
MAX  
200  
100  
2.5  
Pd  
If  
Power Dissipation  
mW  
mA  
A
100  
80  
60  
40  
20  
0
Continuous Forward Current  
Peak Forward Current  
Reverse Voltage  
Ip  
Vr  
2
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-55  
+125  
+125  
+240  
°C  
°C  
°C  
TS  
-20  
-15  
-10  
-5  
0
5
10  
15  
20  
Beam Angle (deg)  
* 1/16 inch from case for 3 seconds max.  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Output Power  
Forward Voltage  
TEST CONDITIONS  
If = 100 mA  
If = 100 mA  
If = 10 μA  
MIN  
TYP  
2.7  
1.7  
MAX UNITS  
Po  
Vf  
2.2  
mW  
2.2  
V
V
Vr  
lp  
Δl  
Ct  
tr  
Reverse Breakdown Voltage  
Peak Wavelength  
Spectral Bandwidth @ 50% (FWHM)  
Terminal Capacitance  
Rise Time  
2.0  
If = 20 mA  
830  
850  
35  
68  
870  
nm  
nm  
pF  
nS  
nS  
If = 20 mA  
Vr = 0V, f = 1MHz  
If = 20 mA  
15  
tf  
Fall Time  
If = 20 mA  
15  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
REV 5/24/07  

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