SD055-23-21-211 [ADVANCEDPHOTONIX]

Red Enhanced Quad Cell Silicon Photodiode; 红四增强细胞硅光电二极管
SD055-23-21-211
型号: SD055-23-21-211
厂家: ADVANCED PHOTONIX, INC.    ADVANCED PHOTONIX, INC.
描述:

Red Enhanced Quad Cell Silicon Photodiode
红四增强细胞硅光电二极管

光电 二极管 光电二极管
文件: 总1页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Red Enhanced Quad Cell Silicon Photodiode  
SD 055-23-21-211  
PACKAGE DIMENSIONS INCH [mm]  
.200 [5.08]  
.132 [3.35]  
Ø.100 [Ø2.54]  
PIN CIRCLE  
6X Ø.017 [0.43]  
5
Ø.154 [3.91]  
67°  
6
1
4
3
C
A
B
D
VIEWING  
Ø.184 [4.67]  
ANGLE  
2
Ø.210 [5.33]  
CHIP PERIMETER  
6X .50 [12.7] MIN  
A
1
3
4
6
CHIP DIMENSIONS INCH [mm]  
B
C
D
4X .0197 [0.500] SQUARE  
2
5
ACTIVEAREA
.0006 [0.152] GAP  
C
B
.072 [1.83]  
SQUARE  
SCHEMATIC  
D
A
TO-18 PACKAGE  
.0006 [0.152] GAP  
FEATURES  
DESCRIPTION  
APPLICATIONS  
Low noise  
The SD 055-23-21-211 is a red enhanced quad-cell  
silicon photodiode used for nulling, centering, or  
measuring small positional changes packaged in a  
hermetic TO-18 metal package.  
• Emitter Alignment  
• Position sensing  
• Medical and Industrial  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
50  
UNITS  
Reverse Voltage  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+150  
+125  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
VR = 5 V  
MIN  
TYP  
MAX  
UNITS  
nA  
ID  
0.1  
0.4  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
800  
VR = 0 V, f = 1 MHz  
VR = 5 V, f = 1 MHz  
Spot Scan  
15  
3
CJ  
Junction Capacitance  
Spectral Application Range  
Responsivity  
pF  
lrange  
350  
1100  
nm  
A/W  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 μA  
VR = 0V @ l=950nm  
RL = 50 ,VR = 0 V  
RL = 50 ,VR = 10 V  
0.32  
0.50  
0.36  
R
0.55  
50  
1.2x10-14  
190  
VBR  
Breakdown Voltage  
V
NEP  
Noise Equivalent Power  
W/ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  

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