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SD380-23-21-051 [ADVANCEDPHOTONIX]

Red Enhanced Quad Cell Silicon Photodiode; 红四增强细胞硅光电二极管
SD380-23-21-051
型号： SD380-23-21-051
厂家： ADVANCED PHOTONIX, INC.    ADVANCED PHOTONIX, INC.
描述：

Red Enhanced Quad Cell Silicon Photodiode
红四增强细胞硅光电二极管

光电 二极管 光电二极管
文件： 总1页 (文件大小：86K)
中文：  中文翻译
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Red Enhanced Quad Cell Silicon Photodiode  
SD 380-23-21-051  
PACKAGE DIMENSIONS INCH [mm]  
.195 [4.95]  
Ø1.005 [25.53]  
Ø.995 [25.27]  
CHIP PERIMETER  
45°  
.185 [4.70]  
.075 [1.90]  
6X Ø.018 [0.46]  
2
1
3
45°  
Ø.700 [17.78]  
Ø.690 [17.53]  
107°  
VIEWING  
ANGLE  
C
D
B
A
.030 [0.76]  
6X .750 [19.05]  
Ø.980 [24.89]  
Ø.970 [24.64]  
45°  
45°  
4
6
5
CHIP DIMENSIONS INCH [mm]  
.402 [10.21] SQUARE  
A
B
C
D
Ø.730 [18.54]  
PIN CIRCLE  
6
1
3
4
2
5
Ø.380[9.65] ACTIVEAREA
C
B
D
A
.004 [0.10] GAP  
SCHEMATIC  
TO-8 PACKAGE  
.004 [0.10] GAP  
FEATURES  
DESCRIPTION  
APPLICATIONS  
• Emitter Alignment  
• Position sensing  
• Medical and Industrial  
• Low noise  
The SD 380-23-21-051 is a red enhanced quad-cell  
silicon photodiode used for nulling, centering, or  
measuring small positional changes packaged in a  
TO-8 metal package.  
• Red enhanced  
• High shunt resistance  
• High response  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
0.70  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
SYMBOL  
PARAMETER  
MIN  
MAX  
UNITS  
VBR  
Reverse Voltage  
50  
V
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+150  
+125  
+240  
°C  
°C  
°C  
TS  
* 1/16 inch from case for 3 seconds max.  
Wavelength (nm)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
CHARACTERISTIC  
Dark Current  
TEST CONDITIONS  
VR = 5 V  
MIN  
TYP  
5.0  
MAX  
27.0  
UNITS  
nA  
ID  
MW  
RSH  
Shunt Resistance  
VR = 10 mV  
100  
VR = 0 V, f = 1 MHz  
VR = 5 V, f = 1 MHz  
Spot Scan  
l= 633nm, VR = 0 V  
l= 900nm, VR = 0 V  
I = 10 jA  
VR = 0V @ l=950nm  
RL = 50 ꢀ,VR = 0 V  
RL = 50 ꢀ,VR = 10 V  
375  
75  
CJ  
Junction Capacitance  
Spectral Application Range  
Responsivity  
pF  
lrange  
350  
0.32  
0.50  
1100  
nm  
A/W  
0.36  
0.55  
50  
R
VBR  
NEP  
Breakdown Voltage  
Noise Equivalent Power  
V
3.0x10-14  
190  
W/ ¥ Hz  
tr  
Response Time**  
nS  
13  
**Response time of 10% to 90% is specified at 660nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
REV 4/19/06  

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