ACT-F2M32C-150F18Q [AEROFLEX]
ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module; ACT- F2M32A高速64兆扇区擦除闪存多芯片模块
| 型号： | ACT-F2M32C-150F18Q |
| 厂家： | 
AEROFLEX CIRCUIT TECHNOLOGY |
| 描述： | ACT-F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module |
| 文件： | 总9页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT–F2M32A High Speed 64 Megabit
Sector Erase
FLASH Multichip Module
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
Features
■ 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One
■ Ready/Busy output (RY/BY) – Hardware method for
MCM Package
detection of program or erase cycle completion
■ Overall Configuration is 2M x 32
■ +5V Power Supply / +5V Programing Operation
■ Access Times of 90, 120 and 150 ns
■ Erase/Program Cycles – 100,000 Minimum
■ Sector erase architecture (Each Die)
■ Hardware RESET pin – Resets internal state machine
to the read mode
■ Erase Suspend/Resume – Supports reading or
programming data to a sector not being erased
■ Packaging – Hermetic Ceramic
● 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
● 32 uniform sectors of 64 Kbytes each
● Any combination of sectors can be erased. Also
supports full chip erase
■ Internal Decoupling Capacitors for Low Noise
Operation
● Sector group protection is user definable
■ Embedded Erase Algorithims – Automatically
■ Commercial, Industrial and Military Temperature
pre-programs and erases the die or any sector
Ranges
■ Embedded Program Algorithims – Automatically
■ MIL-PRF-38534 Compliant MCMs Available
programs and verifies data at specified address
Pin Description
I/O0-31 Data I/O
CE4
A0–20 Address Inputs
Block Diagram – CQFP(F18)
General Description
Utilizing AMD’s Sector Erase
Standard Configuration
CE1
CE2
CE3
Flash
Memory
Die,
the
RESET
WE
OE
A0 – A20
RY/BY
WE
CE1-4
OE
Write Enables
Chip Enables
Output Enable
Ready/Busy
Reset
ACT-F2M32A is a high speed,
64
multichip
megabit
CMOS
flash
(MCM)
module
designed for full temperature
range, military, space, or high
reliability applications.
RY/BY
RESET
VCC
2Mx8
2Mx8
2Mx8
2Mx8
Power Supply
Ground
The ACT-F2M32A consists of
four high-performance AMD
Am29F016 16Mbit (16,777,216
bit) memory die. Each die
contains 8 separately write or
GND
NC
8
8
8
8
Not Connected
I/O0-7
I/O8-15
I/O16-23
I/O24-31
Block Diagram – CQFP(F18)
erase
sector
groups
of
Pin Description
Optional Configuration
256Kbytes (A sector group
consists of 4 adjacent sectors of
64Kbytes each).
I/O0-31
Data I/O
WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4
A0–20 Address Inputs
RESET
OE
A0 – A20
WE1-4
CE1-4
OE
Write Enable
Chip Enables
Output Enable
Reset
The command register is
written by bringing WE to a logic
low level (VIL), while CE is low
and OE is high (VIH). Reading is
accomplished by chip Enable
(CE) and Output Enable (OE)
being logically active. Access
time grades of 90ns, 120ns and
150ns maximum are standard.
2Mx8
2Mx8
2Mx8
2Mx8
RESET
VCC
Power Supply
Ground
8
8
8
8
GND
NC
Not Connected
I/O0-7
I/O8-15
I/O16-23
I/O24-31
eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97
General Description, Cont’d,
The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94"
SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment
temperature range of -55°C to +125°C.
The ACT-F2M32A can be programmed (both read and write functions) in-system using
the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase
operations. The end of program or erase is detected by the RY/BY pin, Data Polling of
DQ7, or by the Toggle bit (DQ6).
The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.
Each block can be independently erased and programmed 100,000 times at +25°C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash
Memory, see the AMD datasheet (Publication 18805).
Aeroflex Circuit Technology
2
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Absolute Maximum Ratings
Parameter
Range
-55 to +125
-65 to +150
-2.0 to +7.0
-2.0 to +13.5
-2.0 to +7.0
200
Units
°C
°C
V
Case Operating Temperature Range
Storage Temperature Range
Voltage with Respect to GND (All pins except A9) (1)
(2)
V
Voltage on Pins A9, OE, RESET
Vcc Supply Voltage with Respect to Ground (1)
V
Output Short Circuit Current (3)
mA
Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on
input/output pins is VCC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns.
2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns.
Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns.
3. No more than one output shorted to ground for no more than 1 second.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional
operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
Recommended Operating Conditions
Symbol
VCC
VIH
Parameter
Minimum
+4.5
Maximum
Units
V
+5.5
5V Power Supply Voltage (10%)
Input High Voltage (CMOS)
Input Low Voltage
0.7 x VCC
-0.5
V
+ 0.3
V
cc
+0.8
+125
VIL
V
TC
-55
°C
Operating Temperature (Military)
Capacitance
(f = 1MHz, TC = 25°C, Standard Configuration)
Symbol Parameter
Maximum
Units
pF
CAD
50
50
20
50
60
50
20
A0 – A20 Capacitance
OE Capacitance
COE
CCE
pF
pF
CE Capacitance
CRESET
pF
RESET Capacitance
WE Capacitance
CWE
CRY/BY
CI/O
pF
pF
RY/BY Capacitance
I/O0 – I/O31 Capacitance
pF
Capacitance Guaranteed by design, but not tested.
DC Characteristics – CMOS Compatible
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter
Sym
Conditions
VCC = VCCMax., VIN = VCC or GND
Min
Max Units
IIL
10
50
µA
µA
µA
mA
mA
mA
mA
V
Input Load Current
ILIT
A9 Leakage Current
VCC = VCCMax., A9 = +12V
VCC = VCCMax., VIN = GND to VCC
CE = VIL, OE = VIH
ILO
10
Output Leakage Current
Vcc Active Read Current
VccActiveProgram/EraseCurrent(1)
Vcc Standby Current
ICC1
ICC2
ICC3
ICC4
VOL
160
240
4
CE = VIL, OE = VIH
VCC = VCCMax., CE = RESET = VCC ± 0.3V
VCC = VCCMax., RESET = VCC ± 0.3V
VCC = VCCMin., IOL = 12 mA
4
Vcc Standby Current (Reset)
Output Low Voltage
0.45
0.85 x
VCC
Output High Voltage
VOH1
V
VCC = VCCMin., IOH = -2.5 mA
VCC = VCCMin., IOH = -100 µA
VCC -
0.4V
VOH2
VLKO
V
V
3.2
4.2
Low VCC Lock-Out Voltage
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter
90ns
120ns
150ns
Parameter
Symbol
Standard
tWC
Symbol
JEDEC
tAVAV
Units
Min Max Min Max Min Max
90
0
120
0
150
0
ns
ns
ns
ns
Write Cycle Time
tAS
tAH
tDS
tDH
tAVWL
tWLAX
tDVWH
tWHDX
Address Setup to WE Going Low
Address Hold Time from CE High
Data Setup to WE Going High
Data Hold Time from WE High
45
45
50
50
50
50
0
0
0
0
0
0
ns
ns
ns
Read
tOEH
Output Enable Hold Time
Toggle Bit I and Data Polling
10
10
10
Read Recover Time Before Write
(OE High to WE Low)
tGHWL
tGHWL
0
0
0
ns
tCS
tCH
tELWL
tWHEH
0
0
0
0
0
0
ns
ns
ns
ns
µs
Sec
µs
ns
µs
ns
CE Setup Time from WE Low
CE Hold Time from WE High
WE Pulse Width
tWP
tWLWH
tWHWL
tWHWH1
tWHWH2
45
20
8
50
20
8
50
20
8
tWPH
tWHWH1
tWHWH2
tVCS
WE Pulse Width High
Byte Programming Operation
Sector Erase Operation
VCC Set-Up Time
15
15
15
50
500
4
50
500
4
50
500
4
tVIDR
Rise Time to VID
t
OESP
RP
OE Setup Time to WE Active
Reset Pulse Width
t
500
500
500
Program/Erase Valid to RY/BY
Delay
tBUSY
40
50
60
ns
Notes:
1. Not 100% tested.
AC Characteristics – Read Only Operations
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter
90ns
120ns
150ns
Parameter
Symbol
Standard
tRC
Symbol
JEDEC
tAVAV
Units
Min Max Min Max Min Max
Read Cycle Time (1)
90
120
150
ns
ns
ns
ns
ns
ns
tACC
tCE
tOE
tDF
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
90
90
40
20
20
120
120
50
150
150
55
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE to Output in High Z (1)
OE to Output in High Z (1)
30
35
tDF
0
0
30
0
0
35
Output Hold from Addresses, CE or OE Change, Whichever Occurs
First
tOH
tAXQX
0
ns
µs
RESET Low to Read Mode (1)
tREADY
20
20
20
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
4
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Characteristics – Write/Erase/Program Operations – CE Controlled
(TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified)
Parameter Parameter
90ns
120ns
150ns
Parameter
Symbol
Standard
tWC
Symbol
JEDEC
tAVAV
Units
Min Max Min Max Min Max
Write Cycle Time (1)
90
0
120
0
150
0
ns
ns
ns
ns
ns
tAS
tAH
tAVEL
tELAX
tDVEH
tEHDX
Address Setup to CE Going Low
Address Hold Time from CE Low
Data Setup to CE Going High
Data Hold Time from CE High
Output Enable Setup Time (1)
45
45
0
50
50
0
50
50
0
tDS
tDH
tOES
0
0
0
0
0
0
ns
ns
ns
Read
Output Enable Hold Time (1)
tOEH
Toggle Bit I and Data Polling
10
10
10
Read Recover Time Before Write
(OE High to WE Low)
tGHEL
tGHEL
0
0
0
ns
tWS
tWH
tWLEL
tEHWH
tELEH
0
0
0
0
0
0
ns
ns
CE Setup Time from WE Low
WE Hold Time from CE High
WE Pulse Width
tCP
45
20
8
50
20
8
50
20
8
ns
tCPH
tELEL
ns
WE Pulse Width High
tWHWH1
tWHWH2
tWHWH1
tWHWH2
µs
Byte Programming Operation
Sector Erase Operation
15
15
15
Sec
Notes:
1. Not 100% tested.
Aeroflex Circuit Technology
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Test Circuit
Test Configuration Component Values
CL
R1
R2
Test Configuration
(pF)
(Ω)
(Ω)
VCC
3.3V Standard Test
5V Standard Test
50
50
990
580
770
390
R1
R2
NOTES:
CL includes jig capacitance.
Device
Under
Test
OUT
CL
Parameter
Typical
Units
Input Pulse Level
Input Rise and Fall
0 – 3.0
5
V
ns
V
Input and Output Timing Reference Level
1.5
AC Waveforms for Write and Erase Operations, WE Controlled
3rd Bus Cycle
Data Polling
5555H
tWC
PA
PA
Addresses
tAH
tRC
tAS
CE
OE
WE
tGHWL
tWP
tWHWH1
tWPH
tCS
tDF
tOE
tDH
PD
DQ7
DOUT
Data
AOH
tDS
tOH
+5 Volt
tCE
Aeroflex Circuit Technology
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
AC Waveforms for Write and Erase Operations, CE Controlled
Data Polling
5555H
tWC
PA
PA
Addresses
tAH
tAS
WE
OE
CE
tGHEL
tCP
tWHWH1
tCPH
tWS
tDH
AOH
PD
DQ7
DOUT
Data
tDS
+5 Volt
AC Waveform For Read Operations
tRC
Addresses Stable
tACC
Addresses
CE
OE
tDF
tOE
tOEH
WE
tCE
tOH
High Z
High Z
Outputs
Output Valid
Aeroflex Circuit Technology
7
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
Pin Numbers & Functions
68 Pins — Dual-Cavity CQFP (Standard Configuration)
Pin #
1
Function
GND
CE3
A5
Pin #
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
GND
I/O8
Pin #
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Function
OE
Pin #
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Function
GND
I/O23
I/O22
I/O21
I/O20
I/O19
I/O18
I/O17
I/O16
VCC
2
CE2
3
I/O9
A17
4
A4
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
VCC
RY/BY
NC
5
A3
6
A2
NC
7
A1
A18
8
A0
A19
9
RESET
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
A20
10
11
12
13
14
15
16
17
I/O31
I/O30
I/O29
I/O28
I/O27
I/O26
I/O25
I/O24
A11
A10
A12
A9
A13
A8
A14
A7
A15
A6
A16
WE
CE1
CE4
Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1
"F18" — CQFP Package
.140
MAX
.990 SQ
±.010
.940 SQ
±.009
Pin 9
Pin 61
Pin 10
Pin 60
.008
±.002
.015
±.002
.010
±.008
.040
.015
±.002
Detail “A”
.900 SQ
REF
.640 SQ
REF
Metal spacer
Pin 26
Pin 27
Pin 44
Pin 43
.800 REF
See Detail “A”
All dimensions in inches
Aeroflex Circuit Technology
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SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
C I R C U I T T E C H N O L O G Y
Ordering Information
Model Number
Screening
Speed
Package
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
CQFP
ACT–F2M32A–090F18C
ACT–F2M32A–120F18C
ACT–F2M32A–150F18C
ACT–F2M32A–090F18I
ACT–F2M32A–120F18I
ACT–F2M32A–150F18I
ACT–F2M32A–090F18M
ACT–F2M32A–120F18M
ACT–F2M32A–150F18M
ACT–F2M32A–090F18Q
Commercial (0°C to +70°C)
Commercial (0°C to +70°C)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Industrial (-40°C to +85°C)
Industrial (-40°C to +85°C)
Military (-55°C to +125°C)
Military (-55°C to +125°C)
Military (-55°C to +125°C)
90 ns
120 ns
150 ns
90 ns
120 ns
150 ns
90 ns
120 ns
150 ns
90 ns
DESC Drawing Pending
MIL-PRF-38534 Compliant
ACT–F2M32A–120F18Q
ACT–F2M32A–150F18Q
DESC Drawing Pending
CQFP
CQFP
120 ns
150 ns
MIL-PRF-38534 Compliant
DESC Drawing Pending
MIL-PRF-38534 Compliant
Part Number Breakdown
ACT– F 2M 32 A– 090 F18 M
Aeroflex Circuit
Technology
Screening
Memory Type
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
S = SRAM
F = FLASH EEPROM
E = EEPROM
M = Military Temp, -55°C to +125°C, Screened *
D = Dynamic RAM
Q = MIL-PRF-38534 Compliant/SMD if applicable
Memory Depth, Locations
Package Type & Size
Surface Mount Packages
F18 = .94" SQ 68 Lead\Dual-Cavity CQFP
Memory Width, Bits
Pinout Options
A = One WE, RY/BY access on Pin 38 - Standard pinout
C = Four WE’s & RY/BY internally tied - Optional pinout
*
Screened to the individual test methods of MIL-STD-883
Memory Speed, ns (+5V VCC)
Specifications subject to change without notice
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11830
www.aeroflex.com/act1.htm
Aeroflex Circuit Technology
Telephone: (516) 694-6700
FAX: (516) 694-6715
Toll Free Inquiries: (800) 843-1553
E-Mail: sales-act@aeroflex.com
SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700
9
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