ACT-SF2816N-37P3T [AEROFLEX]
ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module; ACT- SF2816高速128Kx16 SRAM / FLASH 512Kx16多芯片模块
| 型号： | ACT-SF2816N-37P3T |
| 厂家： | 
AEROFLEX CIRCUIT TECHNOLOGY |
| 描述： | ACT-SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module |
| 文件： | 总11页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACT–SF2816 High Speed
128Kx16 SRAM / 512Kx16 FLASH
Multichip Module
CIRCUIT TECHNOLOGY
www.aeroflex.com
FEATURES
I 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in I Packaging – Hermetic Ceramic
G 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
One MCM
Aeroflex code# "P3"
I Access Times of 25ns (SRAM) and 60ns (Flash)
or 35ns (SRAM) and 70 or 90ns (Flash)
I Organized as 128K x 16 of SRAM and 512K x 16
of Flash Memory with Separate Data Buses
I Both Blocks of Memory are User Configurable as
512KX8 AND 1MX8 Respectively
G 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
G 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
I DESC SMD – TBD
I Low Power CMOS
I Input and Output TTL Compatible Design
I MIL-PRF-38534 Compliant MCMs Available
I Decoupling Capacitors and Multiple Grounds for
Low Noise
I Industrial and Military Temperature Ranges
I Industry Standard Pinouts
FLASH MEMORY FEATURES
I Sector Architecture (Each Die)
G 8 Equal Sectors of 64K bytes each
G Any combination of sectors can be erased with one
command sequence
I +5V Programing, +5V Supply
I Embedded Erase and Program Algorithms
I Hardware and Software Write Protection
I Internal Program Control Time.
Note: Programming information available upon request
I 10,000 Erase / Program Cycles
Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18)
Pin Description
SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2
FI/O0-15
Flash Data I/O
SRAM Data I/O
Address Inputs
OE
A0 – A18
SI/O0-15
A0–18
128Kx8
SRAM
128Kx8
SRAM
512Kx8
Flash
512Kx8
Flash
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
8
8
8
8
SI/O0-7
SI/O8-15
FI/O0-7
FI/O8-15
OE
NC
Output Enable
Not Connected
Power Supply
Ground
VCC
GND
eroflex Circuit Technology - Advanced Multichip Modules © SCD3853 REV B 5/18/99
Absolute Maximum Ratings
Symbol
TC
Rating
Range
-55 to +125
-65 to +150
-0.5 to +7
300
Units
°C
Operating Temperature
Storage Temperature
TSTG
VG
°C
V
Maximum Signal Voltage to Ground
TL
°C
Maximum Lead Temperature (10 seconds)
Parameter
Flash Data Retention
10 Years
10,000
Flash Endurance (Write/Erase Cycles)
Normal Operating Conditions
Symbol
VCC
Parameter
Minimum
Maximum
Units
+4.5
+2.2
-0.5
+5.5
VCC + 0.3
+0.8
V
V
V
Power Supply Voltage
Input High Voltage
Input Low Voltage
VIH
VIL
Capacitance
(VIN = 0V, f = 1MHz, T = 25°C)
C
Symbol
CAD
Parameter
Maximum
Units
50
50
20
20
20
pF
pF
pF
pF
pF
A0 – A18 Capacitance
COE
OE Capacitance
CWE1,2
CCE1,2
CI/O
F/S Write Enable Capacitance
F/S Chip Enable Capacitance
I/O0 – I/O15 Capacitance
These parameters are guaranteed by design but not tested
DC Characteristics
(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C, unless otherwise indicated)
Parameter
Sym
Conditions
Min
Max Units
ILI
10
µA
Input Leakage Current
VCC = Max, VIN = 0 to VCC
FCE = SCE = VIH, OE = VIH,
VOUT = 0 to VCC
ILO
ICCx16
ISB
10
µA
Output Leakage Current
SRAM Operating Supply Current x 16
Mode
SCE = VIL, OE = VIH, f = 5MHz, VCC
Max, FCE = VIH
=
325 mA
FCE = SCE = VIH, OE = VIH, f = 5MHz,
VCC = Max
40
mA
Standby Current
VOL
VOH
ICC1
0.4
V
V
SRAM Output Low Voltage
IOL = 8 mA, VCC = Min, FCE = VIH
IOH = -4.0 mA, , VCC = Min, FCE = VIH
FCE = VIL, OE = VIH, SCE = VIH
2.4
SRAM Output High Voltage
130 mA
Flash Vcc Active Current for Read (1)
Flash Vcc Active Current for Program
or Erase (2)
ICC2
150 mA
FCE = VIL, OE = VIH, SCE = VIH
VOL
VOH
VLKO
0.45
V
V
V
Flash Output Low Voltage
Flash Output High Voltage
Flash Low Vcc Lock Out Voltage
IOL = 8 mA, VCC = Min, SCE = VIH
0.85 x VCC
3.2
IOH = -2.5 mA, , VCC = Min, SCE = VIH
Notes: 1) The ICC current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at VIH 2) ICC active while Embedded Algorithim (program or
erase) is in progress 3) DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
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Aeroflex Circuit Technology
SRAM AC Characteristics
(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)
Read Cycle
Parameter
–025
Min Max
25
–035
Min Max
Symbol
Units
tRC
tAA
tACE
tOH
35
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
25
25
Address Access Time
Chip Select Access Time
0
Output Hold from Address Change
Output Enable to Output Valid
Chip Select to Output in Low Z *
Output Enable to Output in Low Z *
Chip Deselect to Output in High Z *
Output Disable to Output in High Z *
* Parameters guaranteed by design but not tested
tOE
15
20
tCLZ
tOLZ
tCHZ
tOHZ
3
0
3
0
12
12
20
20
Write Cycle
Parameter
–025
Min Max
–035
Min Max
Symbol
Units
tWC
tCW
tAW
tDW
tWP
tAS
25
20
20
15
20
0
35
25
25
20
25
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
tOW
tWHZ
tDH
0
0
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
10
20
0
0
tAH
0
0
* Parameters guaranteed by design but not tested
Truth Table
Mode
Standby
Read
SCE
OE
X
SWE
Data I/O
Power
H
L
L
L
X
H
H
L
High Z
Data Out
High Z
Standby
Active
Active
Active
L
Output Disable
Write
H
X
Data In
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Aeroflex Circuit Technology
Timing Diagrams — SRAM
Read Cycle Timing Diagrams
Write Cycle Timing Diagrams
Write Cycle (SWE Controlled, OE = VIH)
Read Cycle 1 (SCE = OE = VIL, SWE = VIH)
tWC
tRC
A0-18
A0-18
tAA
tAW
tCW
tAH
tOH
DI/O
SCE
Previous Data Valid
Data Valid
tAS
tWP
SWE
tOW
tDH
tWHZ
tDW
SEE NOTE
DI/O
Data Valid
Read Cycle 2 (SWE = VIH)
tRC
Write Cycle (SCE Controlled, OE = VIH )
A0-18
tWC
tAA
A0-18
tAH
tAW
SCE
tAS
tACE
tCW
tWP
tCHZ
SEE NOTE
SCE
tCLZ
SEE NOTE
OE
tOHZ
tOE
SWE
SEE NOTE
tOLZ
SEE NOTE
tDW
tDH
DI/O
Data Valid
High Z
DI/O
Data Valid
Note: Guaranteed by design, but not tested.
DON’T CARE
UNDEFINED
AC Test Circuit
Current Source
IOL
AC Test Conditions
Parameter
Typical
0 – 3.0
5
Units
Input Pulse Level
Input Rise and Fall
V
ns
V
VZ ~ 1.5 V (Bipolar Supply)
To Device Under Test
CL = 50 pF
Input and Output Timing Reference Level
1.5
IOH
Current Source
Notes:
1) VZ is programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance
ZO = 75W. 4) VZ is typically the midpoint of VOH and VOL. 5) IOL and IOH are adjusted to simulate a typical resistance
load circuit. 6) ATE Tester includes jig capacitance.
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SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
Flash AC Characteristics – Read Only Operations
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60
–70
–90
Parameter
Units
JEDEC Stand’d Min Max Min Max Min Max
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
tRC
tACC
tCE
tOE
tDF
60
70
90
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output High Z (1)
Output Enable High to Output High Z(1)
Output Hold from Address, CE or OE Change, Whichever is First
Note 1. Guaranteed by design, but not tested
tDF
tOH
0
0
0
Flash AC Characteristics – Write / Erase / Program Operations, FWE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
JEDEC Stand’d
–60
–70
–90
Parameter
Units
Min Max Min Max Min Max
tAVAC
tWC
60
0
70
0
90
0
ns
ns
Write Cycle Time
tELWL
tCE
Chip Enable Setup Time
Write Enable Pulse Width
Address Setup Time
tWLWH
tAVWL
tDVWH
tWHDX
tWLAX
tWHWL
tWHWH1
tWHWH2
tWP
tAS
40
0
45
0
45
0
ns
ns
tDS
40
0
45
0
45
0
ns
Data Setup Time
tDH
tAH
tWPH
ns
Data Hold Time
45
20
45
20
45
20
ns
Address Hold Time
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation
Sector Erase Time
14 TYP 14 TYP 14 TYP
µs
30
30
30
Sec
µs
t
GHWL
0
0
0
Read Recovery Time before Write
Vcc Setup Time
tVCE
50
50
50
µs
50
10
50
10
50
10
Sec
ns
Chip Programming Time
Chip Enable Hold Time
Chip Erase Time
1
tOEH
tWHWH3
120
120
120
Sec
1. Toggle and Data Polling only.
Flash AC Characteristics – Write / Erase / Program Operations, FCE Controlled
(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)
Symbol
–60
–70
–90
Parameter
Units
JEDEC Stand’d Min Max Min Max Min Max
tAVAC
tWLEL
tELEH
tWC
tWS
tCP
60
0
70
0
90
0
ns
ns
Write Cycle Time
Write Enable Setup Time
Chip Enable Pulse Width
Address Setup Time
Data Setup Time
40
0
45
0
45
0
ns
tAVEL
tAS
ns
tDVEH
tEHDX
tELAX
tDS
40
0
45
0
45
0
ns
tDH
tAH
tCPH
ns
Data Hold Time
45
20
45
20
45
20
ns
Address Hold Time
tEHEL
ns
Chip Enable Pulse Width High
Duration of Byte Programming
Sector Erase Time
tWHWH1
tWHWH2
14 TYP 14 TYP 14 TYP
µs
30
30
30
Sec
ns
t
GHEL
0
0
0
Read Recovery Time
Chip Programming Time
Chip Erase Time
50
50
50
Sec
Sec
tWHWH3
120
120
120
5
SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
AC Waveforms for Flash Memory Read Operations
tRC
Addresses
FCE
Addresses Stable
tACC
tDF
OE
tOE
FWE
tCE
tOH
High Z
High Z
Outputs
Output Valid
Write/Erase/Program
Operation for Flash Memory, FWE Controlled
Data Polling
Addresses
5555H
PA
PA
tRC
tWC
tAH
tAS
FCE
OE
tGHWL
tWP
tWHWH1
tWPH
FWE
tCE
tDF
tOE
tDH
AOH
PD
D7
DOUT
Data
5.0V
tDS
tOH
tCE
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the deviced.
4. Dout is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
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AC Waveforms Chip/Sector
Erase Operations for Flash Memory
Data Polling
5555H
tAH
5555H
2AAAH
5555H
2AAAH
SA
Addresses
tAS
FCE
OE
tGHWL
tWP
FWE
tWPH
tDH
tCE
AAH
55H
80H
AAH
55H
10H/30H
Data
VCC
tDS
tVCE
Notes:
1. SA is the sector address for sector erase.
AC Waveforms for Data Polling
During Embedded Algorithm Operations for Flash Memory
tCH
FCE
tDF
tOE
OE
tOEH
FWE
tCE
tOH
*
High Z
DQ7=
Valid Data
DQ7
DQ7
tWHWH1 or 2
DQ0–DQ6
Valid Data
DQ0-DQ6
DQ0–DQ6=Invalid
tOE
* DQ7=Valid Data (The device has completed the Embedded operation).
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SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
Write/Erase/Program Operation for Flash Memory, FCE Controlled
Data Polling
5555H
PA
PA
Addresses
tWC
tAS
tAH
FCE
OE
tGHWL
tCP
tWHWH1
FWE
tCPH
tDH
tWS
AOH
PD
D7
DOUT
Data
5.0V
tDS
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the 0utput of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
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SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
Pin Numbers & Functions
66 Pins — PGA-Type
Pin #
1
Function
SI/O8
SI/O9
SI/O10
A13
Pin #
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
Pin #
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Function
FI/O9
FI/O10
A6
Pin #
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
Function
FWE1
FCE1
GND
FI/O3
FI/O15
FI/O14
FI/O13
FI/O12
A0
A12
2
Vcc
3
SCE1
NC
4
A7
5
A14
SI/O3
SI/O15
SI/O14
SI/O13
SI/O12
OE
NC
6
A15
A8
7
A16
A9
8
A17
FI/O0
FI/O1
FI/O2
VCC
9
SI/O0
SI/O1
SI/O2
SWE2
SCE2
GND
SI/O11
A10
10
11
12
13
14
15
16
17
A1
A18
A2
SWE1
SI/O7
SI/O6
SI/O5
SI/O4
FI/O8
FCE2
FWE2
FI/O11
A3
FI/O7
FI/O6
FI/O5
FI/O4
A4
A11
A5
"P3" — 1.08" SQ PGA Type Package Standard (without shoulders)
"P7" — 1.08" SQ PGA Type Package (with shoulders on Pins 1, 11, 56 & 66)
Bottom View (P7 & P3)
Side View
(P7)
Side View
(P3)
1.085 SQ
MAX
1.000
.185
TYP
MAX
.600
TYP
Pin 1
.025
.035
Pin 56
.050 DIA
TYP
1.000
TYP
.100
TYP
.100 TYP
.020
.016
.020
.016
Pin 66
Pin 11
.100 TYP
.145
.165
MIN
MIN
.160
MAX
All dimensions in inches
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Aeroflex Circuit Technology
Pin Numbers & Functions
68 Pins — Dual-Cavity CQFP
Pin #
1
Function
GND
FCE1
A5
Pin #
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Function
GND
SI/O8
SI/O9
SI/O10
SI/O11
SI/O12
SI/O13
SI/O14
SI/O15
Vcc
Pin #
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
Function
Pin #
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
Function
GND
FI/O7
FI/O6
FI/O5
FI/O4
FI/O3
FI/O2
FI/O1
FI/O0
VCC
OE
2
SCE2
A17
3
4
A4
SWE2
FWE1
FWE2
A18
5
A3
6
A2
7
A1
8
A0
NC
9
NC
NC
10
11
12
13
14
15
16
17
SI/O0
SI/O1
SI/O2
SI/O3
SI/O4
SI/O5
SI/O6
SI/O7
FI/O15
FI/O14
FI/O13
FI/O12
FI/O11
FI/O10
FI/O9
FI/O8
A11
A10
A12
A9
A13
A8
A14
A7
A15
A6
A16
SWE1
FCE2
SCE1
"F18" — CQFP Package
.140
MAX
.990 SQ
.010
.015
.002
.950 SQ
MAX
Pin 9
Pin 61
Pin 10
Pin 60
.008
.002
.010
.008
.050
REF
.015
.002
Detail “A”
.890 SQ
REF
.640 SQ
REF
.050
TYP
Metal spacer
Pin 26
Pin 27
Pin 44
Pin 43
.800 REF
See Detail “A”
All dimensions in inches
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SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
C I R C U I T T E C H N O L O G Y
Ordering Information
Model Number
DESC SMD Number
Speed
Package
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
25(S) / 60(F) ns
35(S) / 70(F) ns
35(S) / 90(F) ns
25(S) / 60(F) ns
35(S) / 70(F) ns
35(S) / 90(F) ns
25(S) / 60(F) ns
35(S) / 70(F) ns
35(S) / 90(F) ns
1.08"sq PGA-Type
1.08"sq PGA-Type
1.08"sq PGA-Type
1.08"sq PGA-Type
1.08"sq PGA-Type
1.08"sq PGA-Type
.94"sq CQFP
ACT–SF2816N–26P3Q
ACT–SF2816N–37P3Q
ACT–SF2816N–39P3Q
ACT–SF2816N–26P7Q
ACT–SF2816N–37P7Q
ACT–SF2816N–39P7Q
ACT–SF2816N–26F18Q
ACT–SF2816N–37F18Q
ACT–SF2816N–39F18Q
.94"sq CQFP
.94"sq CQFP
Note: (S) = Speed for SRAM, (F) = Speed for FLASH
Part Number Breakdown
ACT– S F 28 16 N– 26 P7 Q
Aeroflex Circuit
Technology
Screening
C = Commercial Temp, 0°C to +70°C
I = Industrial Temp, -40°C to +85°C
T = Military Temp, -55°C to +125°C
Memory Type
SF = SRAM Flash Combo Module
M = Military Temp, -55°C to +125°C, Screening *
Q = MIL-PRF-38534 Compliant / SMD
Memory Depth
2 = 2M SRAM, 8 = Locations
Package Type & Size
Memory Width, Bits
Options, N = none
Memory Speed Code
Surface Mount Packages
Thru-Hole Packages
F18 = .94"SQ 68 Lead Dual-Cavity
CQFP
P3 = 1.085"SQ PGA 66 Pins
with out shoulder
P7 = 1.085"SQ PGA 66 Pins
with shoulder
26 = 25ns SRAM & 60ns FLASH
37 = 35ns SRAM & 70ns FLASH
39 = 35ns SRAM & 90ns FLASH
*
Screened to the individual test methods of MIL-STD-883
Specifications subject to change without notice.
Aeroflex Circuit Technology
35 South Service Road
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Plainview New York 11830
Toll Free Inquiries: 1-(800) 843-1553
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SCD3853 REV B 5/18/99 Plainview NY (516) 694-6700
Aeroflex Circuit Technology
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