KSV1405A [AEROFLEX]
Variable Capacitance Diode, Very High Frequency, 250pF C(T), 12V, Silicon, Hyperabrupt, DO-7, GLASS PACKAGE-2;
| 型号： | KSV1405A |
| 厂家： | 
AEROFLEX CIRCUIT TECHNOLOGY |
| 描述： | Variable Capacitance Diode, Very High Frequency, 250pF C(T), 12V, Silicon, Hyperabrupt, DO-7, GLASS PACKAGE-2 |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSV1402-1412
DIODE BIAS (volts)
DIODE REVERSE BIAS
P.O. BOX 609 · ROCKPORT, MAINE 04856 · 207-236-6076 · FAX 207-236-9558
SILICON HYPERABRUPT
TUNING DIODES
· High capacitance ratios
· Linear tuning between 2 and 8 volts
· Available over a broad range junction capacitances
· Satisfies a large number of broadband applications thru the VHF frequency band
KSV1401 - KSV1412
DIODE CAPACITANCE
(CT)
TUNING RATIO (TR)
C•1V / C•10V C•2V / C•10V
@ 1 MHz @ 1 MHz
QUALITY FACTOR
PART
NUMBER
Q
pF @ 1V•1 MHz
MIN MAX
440 660
pF @ 2V•1 MHz
MIN
@ 2V • 1 MHz
MIN
MAX
MIN
MIN
KSV1401
KSV1402
14:1
200
200
45
69
10:1
KSV1403
KSV1404
140
96
210
144
10:1
10:1
200
200
KSV1405
KSV1406
200
80
300
120
10:1
10:1
200
200
KSV1407
KSV1408
54
37
82
57
10:1
10:1
200
200
KSV1409
KSV1410
26
17
40
27
10:1
9.5:1
200
200
KSV1411
KSV1412
12
8
18
12
8.5:1
7.5:1
200
200
Package Style
DO-7
Device Dissipation (PD)
TA = 25°C
400 mW
Junction Temperature (TJ)
175°C
Reverse Breakdown Voltage (VBR)
Max Reverse Leakage Current (IR)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance
10 µAdc
Vr = 10 Vdc
12 Vdc Min
0.1 µAdc
-55° to + 150°C
-65° to + 200°C
± 20%
Standard Device
Suffix A
± 10%
Suffix B
± 5%
To order devices screened to MIL-PRF-19500 JANTX level, Appendix E, Table IV add suffix H.
P.O. BOX 609 · ROCKPORT, MAINE 04856 · 207-236-6076 · FAX 207-236-9558
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