LG1628AXA [AGERE]
LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier; LG1628AXA SONET / SDH 2.488 Gb / s的互阻放大器
| 型号： | LG1628AXA |
| 厂家： | 
AGERE SYSTEMS |
| 描述： | LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier |
| 文件： | 总12页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
A complete receiver/regenerator can be constructed
with an LG1628AXA followed by an LG1605 limiting
amplifier and LG1600 clock and data regenerator.
Features
■ High data rate: 2.5 Gbits/s
■ High gain: 5.8 kΩ transimpedance
■ Complementary 50 Ω outputs
■ Low noise
Figure 1 shows the block diagram of the LG1628AXA
transimpedance amplifier. The amplifier consists of a
4.2 kΩ differential transimpedance stage followed by
a limiting buffer that provides complementary 50 Ω
outputs.
■ Ultrawide dynamic range
■ Single –5.2 V ECL power supply
RF
GND
Applications
OUT+
OUT–
IN–
IN+
ZEFF
■ SONET/SDH receivers
50 Ω
■ SONET/SDH test equipment
■ Digital video transmission
LIMITING
BUFFER
VSS
RF
OVERLOAD CONTROL
Functional Description
5-5329(F)
The Lucent Technologies Microelectronics Group
LG1628AXA is a hybrid integrated circuit that com-
bines the Lucent LG1628A gallium arsenide (GaAs)
transimpedance amplifier chip with an external Si
dual operational amplifier and necessary filtering to
achieve an ultrawide dynamic range amplifier. The
LG1628AXA is capable of handling input currents
from 3 µAavg to 4 mAavg (patent pending). Amplifier
operation is from a single –5.2 V power supply. The
targeted transmission system is SONET OC-48 and
SDH STM-16.
Figure 1. LG1628AXA Functional Diagram
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Preliminary Data Sheet
January 1998
Die Pad Configuration
The die pad configuration is shown in Figure 2.
22
21
20
19
19
19
19
18
18
17
16
15
15
14
14
DNC
BG
GND2
GND1
23
24
24
OUT+
IN–
OUTSIDE DIE DIMENSIONS:
1.62 mm2 x 1.62 mm2
PAD SIZE:
100 µm2 x 100 µm2
OUT–
GND2
(EXCEPT PAD #23, 100 µm2 x 150 µm2)
PAD SEPARATION:
50 µm
IN+
1
2
3
3
13
12
12
11
GND1
VSS2
BYPASS
4
5
6
7
8
9
10
11
5-5336(F)r.2
Figure 2. Die Pad Configuration
2
Lucent Technologies Inc.
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Die Pad Configuration (continued)
The pad descriptions for the LG1628AXA are given in Table 1.
Table 1. Pad Descriptions
Pad
Symbol
Description
1
IN+
Amplifier input; connect to detector anode, current should enter this node.
Ground.
2, 19, 23
GND1
3
4
BYPASS
OP2OUT
OP1OUT
OP1–
Connections between these nodes and an external dual op amp form the over-
load control circuitry. See the test circuit in Figure 4 for wiring details.
To operate the amplifier without overload control connect OP2OUT to VSS,
OP1OUT to GND, and leave BYPASS and the remaining op amp connections
open (Figure 5).
5
6
7
OP1+
8
OP2–
9
OP2+A
OP2+B
10
11
VSS1
VSS2
GND2
OUT–
OUT+
BG
Supply voltage; –5.2 Vdc nominal.
12
13, 16, 18
14
Supply voltage; –5.2 Vdc nominal.
Ground.
Inverted data output (produces low-level output for current entering IN+).
Noninverted data output (produces high-level output for current entering IN+).
15
17
Connection for external –2.5 Vdc voltage reference (typically use an Si band-
gap).
20, 21, 22
24
DNC
IN–
Do not connect; internal test point or reserved for future use.
Inverting input; must provide ac bypass to ground when using overload control.
Lucent Technologies Inc.
3
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Preliminary Data Sheet
January 1998
Typical Connections and Padout of the Hybrid Integrated Circuit
OUT+*
50 Ω
OUT–*
50 Ω
60x30
7
5
9
10
4
17
18
IN+
2
19
60X30
16
15
APD
13
60X30
8
6
60X30
12
14
APD+
3
120X100
20
+VDET
VSS
GND THERMISTOR
5-5336(F).r3
* OUT– is delayed approximately 25 ps with respect to OUT+ due to the longer microstrip line associated with OUT–. An extra delay should be
added to OUT+ before connecting to the next circuit.
Figure 3.Typical Connections to the HIC (See Figure 4 for a Schematic of the Circuitry on the HIC.)
Table 2. HIC Pad Functional Description
Symbol
Description
IN+
APD+
+VDET
VSS
Amplifier input; connect to detector anode, current should enter this node.
RF bypassed connection for the cathode of the APD.
APD power supply connection.
Supply voltage; –5.2 Vdc nominal.
GND
Ground (back of HIC is also ground).
Thermistor Negative temperature coefficient thermistor for APD gain control.
OUT+
OUT–
Noninverted data output (produces high-level output for current entering IN+).
Inverted data output (produces low-level output for current entering IN+).
4
Lucent Technologies Inc.
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent or latent damage to the device. These
are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
Supply Voltage Range (VSS)
Min
Max
Unit
–7
—
0.5
1
V
W
V
Power Dissipation
Voltage (all pins)
0.5
–40
0
VSS
125
100
Storage Temperature Range
Operating Temperature Range
°C
°C
Recommended Operating Conditions
Table 4. Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Ambient Temperature
Power Supply
TA
0
85
°C
VSS
–4.7
–5.7
V
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group
employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro-
tection design evaluation. No industry-wide standard has been adopted for the CDM. However, a standard HBM
(resistance = 1500 Ω, capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes.
The HBM ESD threshold presented here was obtained by using these circuit parameters.
Table 5. ESD Threshold
HBM ESD Threshold
Device
Voltage
LG1628AXA
>500 V
Lucent Technologies Inc.
5
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Preliminary Data Sheet
January 1998
Electrical Characteristics
TA = 25 °C, VSS = –5.2 V, CDETECTOR = 0.5 pF, RLOAD = 50 Ω, unless otherwise indicated.
Parameter
Power Supply Voltage
Symbol
Min
Typ
Max
Unit
VSS
ISS
TZ
–5.7
—
–5.2
140
5.8
–4.7
—
V
Power Supply Current
mA
kΩ
Effective Small-signal Transimpedance
(Single-ended input to either OUT+ or
OUT– each driving a 50 Ω load, differ-
ential gain is twice this value.)
—
—
Small-signal Bandwidth
Transimpedance Peaking
Output Return Loss
BW
TPK
1.5
—
1.6
0
—
1
GHz
dB
S22
10
—
15
300
—
dB
Input Noise Current
(100 kHz—2.5 GHz)
INOISE
350
nArms
Operating Temperature Range
TOP
0
—
85
°C
6
Lucent Technologies Inc.
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Test Circuit with Overload Control
19
18
2.5 V
BANDGAP2
BG
~100 µA
RF
17
15
14
10 Ω
27 kΩ
0.02 µF
300 pF
VSS1
0.047 µF
50 Ω
50 Ω
LOUT
LOUT
24
IN–
IN+
OUT+
OUT–
50 Ω
LIMITING
BUFFER
(SEE NOTE 3 FOR BIAS CONDITIONS)
ZEFF
COUT
RIN
LIN
APD
1
0.047 µF
(LPF, SEE NOTE 5)
(SEE NOTE 4)
APD+
RF
100 pF
OVERLOAD CONTROL
50 Ω
1 kΩ
0.033 µF
100 V CAPS
3
4
5
6
7
8
9
10
11 12
+VDET
100 pF
0.047 µF
300 pF
0.047 µF
–
10 Ω
0.1 µF
OP11
+
Vss
5.2 V
0.047 µF
+
–
OP21
+
0.047 µF
5-5335(F)r.1
1. Operational amplifiers OP1 and OP2 should have the following characteristics (suggested op amps are the LMC6082IM or OP291GS, both
are available as dual op amps in an 8-pin SOIC package):
a.Single 5 V supply operation.
b.Maximum input offset voltage of 1 mV.
c.Low-level output includes negative rail.
d.High-level output to within 2 V of the positive rail.
e.Gain bandwidth product ≥1.8 MHz.
f. Large signal voltage gain ≥100 V/mV.
2. An on-chip 75 kΩ resistor to the negative supply is provided for biasing the voltage reference. Approximately 100 µA of current will be
drawn. (Suggested bandgap reference is the LM4040BIM–2.5, available in an SOT-23 package.)
3. Node IN+ is nominally at –3.3 Vdc. APD supply voltage +Vdet should be adjusted appropriately.
4. RINLIN may be necessary to achieve stability depending on the physical arrangement of the APD and its associated electrical parasitics
(series inductance and other resonances). The amplifier will be stable with a 0.5 pF detector capacitance in series with a 0.5 nH inductor,
but packaged detectors usually do not behave so ideally at frequencies above a few gigahertz. A parallel RL network consisting of a 200 Ω
resistor and a 6 nH inductor is provided on HIC and may be optionally used with a slight noise penalty. Good isolation from output to input
is also essential for amplifier stability.
5. A low-pass filter is provided on the LG1628AXA HIC to reduce higher-frequency noise contributions (Butterworth N = 2, Zo = 50 and fc =
4.25 GHz, LOUT = 2.65 nH, COUT = 0.5 pF).
Figure 4. Optical Receiver with Overload Control
Lucent Technologies Inc.
7
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Preliminary Data Sheet
January 1998
Test Circuit with Overload Control Disabled
19
18
2.5 V
BANDGAP
BG
~100 µA
RF
17
15
14
10 Ω
27 kΩ
0.02 µF
300 pF
VSS1
0.047 µF
50 Ω
50 Ω
LOUT
LOUT
24
1
IN–
IN+
OUT+
OUT–
50 Ω
LIMITING
BUFFER
ZEFF
COUT
RIN
LIN
APD
0.047 µF
APD+
RF
100 pF
OVERLOAD CONTROL
50 Ω
1 kΩ
0.033 µF
3
4
5
6
7
8
9
10
11 12
100 V CAPS
VSS
NC
NC NC NC NC NC
5.2 V
100 pF
0.1 µF
+
10 Ω
5-5334(F)r.3
Note: Notes 2, 3, 4, and 5 from the previous page (Figure 4) apply to this drawing.
Figure 5. Optical Receiver with Overload Control Disabled
8
Lucent Technologies Inc.
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Characteristic Curves (at TA = 25 °C, VSS = –5.2 V, CDETECTOR = 0.0 pF, 0.5 pF, 1.0 pF, RLOAD = 50 Ω)
600
500
400
300
200
80
77
74
71
1.0 pF
68
65
62
59
56
0.5 pF
0.0 pF
100
0
53
50
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
0.001
0.01
0.1
1
10
APD CURRENT (mAavg)
FREQUENCY (GHz)
A. Small-Signal Transimpedance
B. Overload Characteristics1
30
400
1.0 pF
0.5 pF
0.0 pF
350
300
250
200
150
25
20
1.0 pF
0.5 pF
0.0 pF
15
10
5
100
50
0
0
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
C. Input Spectral Noise Density
D.Total Input Noise Current
5-5330(F)r.1, 5-5331(F).ar2, 5-5332(F)r.2, 5-5333(F)r.2
1. >25 dB dynamic range requires an external Si dual operational amplifier. The detector polarity is such that current enters the LG1628A (i.e.,
the detector anode is connected to the LG1628A).
Figure 6. Characteristic Curves as Measured on the LG1628AXA Hybrid Integrated Circuit
Lucent Technologies Inc.
9
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Preliminary Data Sheet
January 1998
Dimensional Drawing of the Hybrid Integrated Circuit (HIC)
Dimensions are in inches. Ceramic thickness is 0.025 inches.
0.327
0.224
0.005
0.005
60x30
7
5
9
10
4
17
18
2
19
60X30
16
15
0.550
13
60X30
8
6
0.358
60X30
12
14
0.141
3
120X100
20
0.018
0.019
0.238
0.035
0.318
0.380
0.525
5-5336(F).ar3
Figure 7. HIC Dimensions and Location of Bonding Pads
Ordering Information
Device Code
LG1628AXA
LG1628BXA*
Package
Temperature
0 °C to 85 °C
0 °C to 85 °C
Comcode
(Ordering Number)
Hybrid Integrated Circuit
Differential Output
107791469
108052085
Hybrid Integrated Circuit
Single-ended Output
* Second output on BXA is terminated through to ground 50 Ω on hybrid.
10
Lucent Technologies Inc.
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Notes
Lucent Technologies Inc.
11
For additional information, contact your Microelectronics Group Account Manager or the following:
INTERNET:
E-MAIL:
http://www.lucent.com/micro
docmaster@micro.lucent.com
U.S.A.:
Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18103
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106)
ASIA PACIFIC: Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256
Tel. (65) 778 8833, FAX (65) 777 7495
JAPAN:
Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan
Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700
EUROPE:
Data Requests: MICROELECTRONICS GROUP DATALINE:Tel. (44) 1189 324 299, FAX (44) 1189 328 148
Technical Inquiries: GERMANY: (49) 89 95086 0 (Munich), UNITED KINGDOM: (44) 1344 865 900 (Bracknell),
FRANCE: (33) 1 41 45 77 00 (Paris), SWEDEN: (46) 8 600 7070 (Stockholm), FINLAND: (358) 9 4354 2800 (Helsinki),
ITALY: (39) 2 6601 1800 (Milan), SPAIN: (34) 1 807 1441 (Madrid)
Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No
rights under any patent accompany the sale of any such product(s) or information.
Copyright © 1998 Lucent Technologies Inc.
All Rights Reserved
Printed in U.S.A.
January 1998
DS97-156FCE
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