1N5711#T25 [AGILENT]
Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GLASS PACKAGE-2;
| 型号： | 1N5711#T25 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, GLASS PACKAGE-2 二极管 |
| 文件： | 总6页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent 1N5711, 1N5712, 5082-2300
Series, 5082-2800 Series, 5082-2900
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Features
• Low Turn-On Voltage
As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage
Description/Applications
Outline 15
Up to 70 V
The 1N5711, 1N5712, 5082-2800/
10/11 are passivated Schottky
barrier diodes which use a
0.41 (.016)
0.36 (.014)
• Matched Characteristics
Available
patented “guard ring” design to
achieve a high breakdown
25.4 (1.00)
MIN.
voltage. Packaged in a low cost
glass package, they are well suited
for high level detecting, mixing,
switching, gating, log or A-D
converting, video detecting,
frequency discriminating,
1.93 (.076)
1.73 (.068)
4.32 (.170)
3.81 (.150)
CATHODE
sampling, and wave shaping.
The 5082-2835 is a passivated
Schottky diode in a low cost glass
package. It is optimized for low
turn-on voltage. The 5082-2835 is
particularly well suited for the
UHF mixing needs of the CATV
marketplace.
25.4 (1.00)
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
The 5082-2300 Series and
Maximum Ratings
5082-2900 devices are unpas-
sivated Schottky diodes in a glass
package. These diodes have
extremely low 1/f noise and are
ideal for low noise mixing, and
high sensitivity detecting. They
are particularly well suited for use
in Doppler or narrow band video
receivers.
Junction Operating and Storage Temperature Range
5082-2303, -2900 .................................................................-60°C to +100°C
1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C
5082-2835 ............................................................................-60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at TCASE = 25°C)
Derate linearly to zero at maximum rated temperature
5082-2303, -2900 .............................................................................. 100 mW
1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW
5082-2835 ......................................................................................... 150 mW
Peak Inverse Voltage ................................................................................. VBR
2
Package Characteristics
Outline 15
Lead Material ........................................................................................ Dumet
Lead Finish .............................................................................. 95-5% Tin-Lead
Max. Soldering Temperature ................................................ 260°C for 5 sec
Min. Lead Strength ....................................................................4 pounds pull
Typical Package Inductance
1N5711, 1N5712: ................................................................................ 2.0 nH
2800 Series: ........................................................................................ 2.0 nH
2300 Series, 2900: .............................................................................. 3.0 nH
Typical Package Capacitance
1N5711, 1N5712: ................................................................................ 0.2 pF
2800 Series: ........................................................................................ 0.2 pF
2300 Series, 2900: ............................................................................ 0.07 pF
The leads on the Outline 15 package should be restricted so that the
bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel
specification is patterned after RS-296-D.
Electrical Specifications at TA = 25°C
General Purpose Diodes
Min.
Breakdown
Voltage
Max.
VF = 1 V Max.
at Forward
Current
Max.
Reverse Leakage
Current
Max.
Capaci-
tance
Forward
Voltage
VF (mV)
Part
Number
Package
Outline
VBR (V)
IF (mA)
IR (nA) at VR (V)
CT (pF)
5082-2800
1N5711
15
15
15
15
15
15
70
70
20
20
15
8*
410
410
15
15
200
200
100
150
100
100
50
50
15
16
8
2.0
2.0
1.2
1.2
1.2
1.0
5082-2810
1N5712
410
35
550
35
5082-2811
5082-2835
410
20
340
10*
1
Test
Conditions
IR = 10 µA
*IR = 100 µA
IF = 1 mA
*V = 0.45 V
VR = 0 V
f =1.0 MHz
F
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835
which is measured at 20 mA.
3
Low 1/f (Flicker) Noise Diodes
Min.
Max.
VF = 1 V Max.
at Forward
Current
Max.
Reverse Leakage
Current
Max.
Capaci-
tance
Part
Number
5082-
Breakdown
Voltage
VBR (V)
Forward
Voltage
VF (mV)
Package
Outline
IF (mA)
IR (nA) at VR (V)
CT (pF)
2303
2900
15
15
20
10
400
400
35
20
500
100
15
5
1.0
1.2
Test
Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V
f =1.0 MHz
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.
Matched Pairs and Quads
Basic
Part Number
5082-
Matched
Pair
Unconnected
Matched
Quad
Unconnected
Batch
Matched[1]
Test Conditions
2900
∆VF at IF = 1.0, 10 mA
2800
5082-2804
∆VF = 20 mV
5082-2805
∆VF = 20 mV
∆VF at IF = 0.5, 5 mA
*IF = 10 mA
∆CO at f = 1.0 MHz
2811
5082-2826
∆VF at IF = 10 mA
∆CO at f = 1.0 MHz
∆V = 10 mV
F
∆CO = 0.1 pF
2835
5082-2080
∆VF at IF =10 mA
∆CO at f = 1.0 MHz
∆V = 10 mV
F
∆CO = 0.1 pF
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter Units 5082-2800
5082-2810
5082-2811
5082-2835
5082-2303
5082-2900
BV
CJ0
EG
IBV
IS
V
pF
eV
A
75
1.6
25
0.8
18
1.0
9
0.7
25
0.7
10
1.1
0.69
0.69
0.69
0.69
0.69
10E-5
7 x 1.0E-9
1.08
10
0.69
10E-5
10E-8
1.08
15
10E-5
2.2 x 10E-9
1.08
10E-5
1.1 x 10E-9
1.08
10E-5
0.3 x 10E-8
1.08
10E-5
2.2 x 10E-8
1.08
A
N
RS
PB
PT
M
Ω
V
25
10
10
5
0.6
0.6
0.6
0.56
2
0.64
2
0.64
2
2
2
2
0.5
0.5
0.5
0.5
0.5
0.5
4
Typical Parameters
100
10.000
1,000
100
10
1000
100
10
100
75
10
1
50
25
100°C
50°C
25°C
0°C
T
= 25°C
A
0.1
0.01
–50°C
1
0
0.10 0.20 0.30 0.40 0.50 0.60
– FORWARD VOLTAGE (V)
0
5
10
15
0.01
0
10
I - FORWARD CURRENT (mA)
F
100
V
V
(V)
F
BR
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2300
Series and 5082-2900 Schottky Diodes.
Figure 2. 5082-2300 Series Typical
Reverse Current vs. Reverse Voltage
at Various Temperatures.
Figure 3. 5082-2300 Series and 5082-2900
Typical Dynamic Resistance (R ) vs.
D
Forward Current (I ).
F
100,000
1.2
1.0
0.8
0.6
50
150
125
10
5
10,000
1000
100
10
100
75
+150°C
1
50
25
0.5
+100°C
5082-2900
5082-2303
+50°C
+25°C
0°C
0.4
0.1
0
0.05
0.2
0
–50°C
T
= °C
A
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
8
12
16
20
0
0.2
V - FORWARD VOLTAGE (V)
F
0.4
0.6
0.8
1.0
1.2
V
R
- REVERSE VOLTAGE (V)
V
- REVERSE VOLTAGE (V)
R
Figure 6. (5082-2800 OR 1N5711)
Figure 4. 5082-2300 and 5082-2900
Typical Capacitance vs. Reverse
Voltage.
Figure 5. I-V Curve Showing Typical
Temperature Variation for 5082-2800
or 1N5711 Schottky Diodes.
Typical Variation of Reverse Current
(I ) vs. Reverse Voltage (V ) at
R
R
Various Temperatures.
12.0
1.5
1.0
0.5
0
100
10
10,000
1000
100
150
125
100
75
50
+150°C
1.0
0.1
25
+100°C
+50°C
T
= °C
A
10
+25°C
0°C
–50°C
0.01
1.0
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
V - REVERSE VOLTAGE (V)
R
15
20
25
30
V
- REVERSE VOLTAGE (V)
V
- FORWARD VOLTAGE (V)
R
F
Figure 7. (5082-2800 or 1N5711)
Typical Capacitance (C ) vs. Reverse
Figure 8. I-V Curve Showing Typical
Temperature Variation for the 5082-
2810 or 1N5712 Schottky Diode.
Figure 9. (5082-2810 or IN5712)
Typical Variation of Reverse Current
T
Voltage (V ).
(I ) vs. Reverse Voltage (V ) at
R
R
R
Various Temperatures.
5
Typical Parameters, continued
100
100,000
10,000
1000
100
100
10
150
10
100
50
1.0
1.0
+150°C
+100°C
+50°C
+25°C
0°C
–50°C
+150°C
25
+100°C
+50°C
+25°C
0°C
T
= °C
A
0.1
0.1
10
–50°C
0.01
0.01
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
V
- FORWARD VOLTAGE (V)
V
- REVERSE VOLTAGE (V)
V - FORWARD VOLTAGE (V)
F
F
R
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811 of Reverse Current (I ) vs. Reverse
Schottky Diode.
Figure 11. (5082-2811) Typical Variation Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
R
Voltage (V ) at Various Temperatures.
R
100,000
11.4
1.2
1000
5082-2800, 1N5711
+150°C
+125°C
10,000
1000
100
10
1.0
5082-2811
100
+100°C
+75°C
+50°C
+25°C
0.8
5082-2811
1N5712
5082-2810/2811
IN5712
0.6
5082-2835
0.4
10
0.2
0
5082-2835
1
1
0
1
2
3
4
5
6
0
2
4
6
8
10
0
2
4
6
8
10
V
- REVERSE VOLTAGE (V)
V
- REVERSE VOLTAGE (V)
I - FORWARD CURRENT (mA)
F
R
R
Figure 13. (5082-2835) Typical Variation
of Reverse Current (I ) vs. Reverse
Figure 14. Typical Capacitance (C ) vs.
Figure 15. Typical Dynamic Resistance
(R ) vs. Forward Current (I ).
T
Reverse Voltage (V ).
R
R
D
F
Voltage (V ) at Various Temperatures.
R
Diode Package Marking
1N5xxx
5082-xxxx
would be marked:
1Nx
xxx
xx
xx
YWW
YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part
number. Y is the last digit of the calendar year. WW is the work week of
manufacture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712
5082-3080
would be marked:
1N5
712
945
30
80
945
Part Number Ordering Information
Part Number
No. of devices
Container
Tape & Reel
Tape & Reel
Antistatic bag
5082-28xx#T25/1N57xx#T25
5082-28xx#T50/ 1N57xx#T50
5082-28xx/ 1N57xx
2500
5000
100
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 1999-2005 Agilent Technologies, Inc.
Obsoletes 5968-7181E
June 20, 2005
5989-3338EN
相关型号：
1N5711-1E3
Rectifier Diode, Schottky, 1 Element, 0.033A, 50V V(RRM), Silicon, DO-204AH, ROHS COMPLIANT, HERMETIC SEALED, DO-35, GLASS PACKAGE-2
MICROSEMI
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