5082-3379#T50 [AGILENT]

Pin Diode, 50V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2;
5082-3379#T50
型号: 5082-3379#T50
厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述:

Pin Diode, 50V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

衰减器 开关 二极管
文件: 总4页 (文件大小:71K)
中文:  中文翻译
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Agilent 1N5719, 1N5767, 5082-3001,  
5082-3039, 5082-3077, 5082-3080/81,  
5082-3188, 5082-3379 PIN Diodes  
for RF Switching and Attenuating  
Data Sheet  
Features  
• Low Harmonic Distortion  
• Large Dynamic Range  
• Low Series Resistance  
0.41 (.016)  
0.36 (.014)  
Description/Applications  
These general purpose switching  
diodes are intended for low  
power switching applications  
such as RF duplexers, antenna  
switching matrices, digital phase  
shifters, and time multiplex  
filters. The 5082-3188 is  
• Low Capacitance  
25.4 (1.00)  
MIN.  
1.93 (.076)  
1.73 (.068)  
optimized for VHF/UHF  
4.32 (.170)  
bandswitching.  
3.81 (.150)  
CATHODE  
The RF resistance of a PIN diode  
is a function of the current  
flowing in the diode. These  
current controlled resistors are  
specified for use in control  
25.4 (1.00)  
MIN.  
applications such as variable RF  
attenuators, automatic gain  
control circuits, RF modulators,  
electrically tuned filters, analog  
phase shifters, and RF limiters.  
DIMENSIONS IN MILLIMETERS AND (INCHES).  
Outline 15  
Outline 15 diodes are available on  
tape and reel. The tape and reel  
specification is patterned after  
RS-296-D.  
Maximum Ratings  
Junction Operating and  
Storage Temperature Range................................................ -65°C to +150°C  
Power Dissipation 25°C .....................................................................250 mW  
(Derate linearly to zero at 150°C)  
Peak Inverse Voltage (PIV)........................................................ same as V  
BR  
Maximum Soldering Temperature....................................... 260°C for 5 sec  
2
diodes. The leads on the Outline  
15 package should be restricted  
so that the bend starts at least 1/  
16 inch (1.6 mm) from the glass  
body. Typical package inductance  
and capacitance are 2.5 nH and  
0.13 pF, respectively. Marking is  
by digital coding with a cathode  
band.  
Mechanical  
Specifications  
The Agilent Outline 15 package  
has a glass hermetic seal with  
dumet leads. The lead finish is 95-  
5 tin-lead (SnPb) for all PIN  
General Purpose Diodes  
Electrical Specifications at TA = 25°C  
Maximum  
Total  
Capacitance  
CT (pF)  
Minimum  
Maximum  
Part  
Number  
5082-  
Breakdown Residual Series Effective Carrier Reverse Recovery  
Voltage  
VBR (V)  
Resistance  
Lifetime  
Time  
trr (ns)  
RS ()  
τ (ns)  
General Purpose Switching and Attenuating  
3001  
3039  
1N5719  
3077  
0.25  
0.25  
0.3**  
0.3  
200  
150  
150  
200  
1.0  
1.25  
1.25  
1.5  
100 (min.)  
100 (min.)  
100 (min.)  
100 (min.)  
100 (typ.)  
100 (typ.)  
100 (typ.)  
100 (typ)  
Band Switching  
3188  
1.0*  
35  
0.6**  
70 (typ.)*  
IF = 50 mA  
IR = 250 mA  
*IF = 10 mA  
*IR = 6 mA  
12 (typ.)  
IF = 20 mA  
VR = 10 V  
Test  
Conditions  
VR = 50 V  
*VR = 20 V  
VR = VBR  
Measure  
IR 10 µA  
IF =100 mA  
*IF = 20 mA  
**IF = 10 mA  
f = 100 MHz  
**VR = 100 V  
f = 1 MHz  
90% Recovery  
Notes:  
Typical CW power switching capability for a shunt switch in a 50 system is 2.5 W.  
RF Current Controlled Resistor Diodes  
Electrical Specifications at TA = 25°C  
Max.  
Max.  
Residual  
Series  
High  
Resistance  
Low  
Resistance  
Difference  
Effective  
Carrier Breakdown  
Lifetime  
t (ns)  
Min.  
Max.  
Total  
in  
Limit, RH (W) Limit, RL (W) Resistance  
vs. Bias  
Part  
Voltage  
Resistance Capacitance  
RS ()  
Number  
V
BR (V)  
CT (pF)  
Min.  
Max. Min.  
Max.  
Slope, Dc  
5082-3080  
1N5767*  
5082-3379  
5082-3081  
1300 (typ.)  
1300 (typ.)  
1300 (typ.)  
2500 (typ.)  
100  
100  
50  
2.5  
2.5  
0.4  
0.4  
0.4  
0.4  
1000  
1000  
8**  
8**  
8**  
8**  
100  
3.5  
1500  
Test  
IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V  
IF = 0.01 mA  
f = 100 MHz  
IF = 1.0 mA  
Batch  
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz  
IF = 20 mA** Matched at  
f = 100 MHz IF = 0.01 mA  
and 1.0 mA  
IR 10 µA  
f = 100 MHz  
*The 1N5767 has the additional specifications:  
τ = 1.0 msec minimum  
IR = 1 µA maximum at VR = 50 V  
VF = 1 V maximum at IF = 100 mA.  
3
Typical Parameters at TA = 25°C (unless otherwise noted)  
10,000  
1000  
100  
10  
100,000  
10,000  
1000  
100  
100  
10  
1
5082-3001, 3039,  
3077, 3080  
IN5719  
5082-3001  
5082-3039  
5082-3077  
IN5719  
5082-3081  
125°C  
25°C  
–60°C  
0.1  
5082-3080  
5082-3379  
1
10  
0.1  
1
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.001 0.01  
0.1  
10  
100  
0.001 0.01  
0.1  
10  
100  
1
1
V
– FORWARD VOLTAGE (V)  
I
– FORWARD BIAS CURRENT (mA)  
I
F
– FORWARD BIAS CURRENT (mA)  
F
F
Figure 3. Typical RF Resistance vs.  
Forward Bias Current.  
Figure 1. Forward Current vs.  
Forward Voltage.  
Figure 2. Typical RF Resistance vs.  
Forward Bias Current.  
1000  
1.0  
2.5  
2.0  
1.5  
5082-3001  
3039  
3077  
IN5719  
100  
.5  
V
= 5V  
R
1.0  
V
= 10V  
= 20V  
R
R
5082-3188  
5082-3039  
IN5719  
V
.5  
5082-3080  
5082-3081  
5082-3001  
5082-3379  
40 50 60 70  
REVERSE VOLTAGE (V)  
10  
0
0
0
10  
20  
40 50  
60 70  
0
10  
20  
0
10  
20  
30  
30  
30  
REVERSE VOLTAGE (V)  
FORWARD CURRENT (mA)  
Figure 6. Typical Reverse Recovery Time  
vs. Forward Current for Various Reverse  
Driving Voltages.  
Figure 4. Typical Capacitance vs.  
Reverse Voltage.  
Figure 5. Typical Capacitance vs.  
Reverse Voltage.  
0
10  
10 dB Bridged Tee Attenuator  
PIN Diode Cross Modulation  
40 dB mV Output Levels  
One Input Frequency Fixed 100 MHz  
20  
10 dB Bridged Tee Attenuator  
20  
Unmodulated Frequency 100 MHz  
30  
100% Modulation 15 kHz  
40 dB mV Output Levels  
40  
40  
5082-3080  
5082-3379  
50  
60  
80  
5082-3080  
5082-3379  
60  
5082-3081  
70  
5082-3081  
100  
80  
0
10 20 30 40 50 60 70 80  
FREQUENCY (MHz)  
0
10 20 30 40 50 60 70 80  
MODULATED FREQUENCY (MHz)  
Figure 7. Typical Second Order  
Intermodulation Distortion.  
Figure 8. Typical Cross Intermodulation  
Distortion.  
Diode Package Marking  
1N5xxx  
5082-xxxx  
would be marked:  
1Nx  
xxx  
xx  
xx  
YWW  
YWW  
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part  
number. Y is the last digit of the calendar year. WW is the work week of  
manufacture.  
Examples of diodes manufactured during workweek 45 of 1999:  
1N5712  
5082-3080  
would be marked:  
1N5  
712  
945  
30  
80  
945  
Part Number Ordering Information  
Part Number  
No. of devices  
Container  
Tape & Reel  
Tape & Reel  
Antistatic bag  
5082-3xxx#T25/1N57xx#T25  
5082-3xxx#T50/ 1N57xx#T50  
5082-3xxx/ 1N57xx  
2500  
5000  
100  
www.agilent.com/semiconductors  
For product information and a complete list of  
distributors, please go to our web site.  
For technical assistance call:  
Americas/Canada: +1 (800) 235-0312 or  
(916) 788-6763  
Europe: +49 (0) 6441 92460  
China: 10800 650 0017  
Hong Kong: (+65) 6756 2394  
India, Australia, New Zealand: (+65) 6755 1939  
Japan: (+81 3) 3335-8152(Domestic/International), or  
0120-61-1280(Domestic Only)  
Korea: (+65) 6755 1989  
Singapore, Malaysia, Vietnam, Thailand, Philippines,  
Indonesia: (+65) 6755 2044  
Taiwan: (+65) 6755 1843  
Data subject to change.  
Copyright © 1999-2005 Agilent Technologies, Inc.  
Obsoletes 5968-7182E  
June 20, 2005  
5989-3339EN  

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