HBAT-540B-TR2 [AGILENT]
High Performance Schottky Diode for Transient Suppression; 高性能肖特基二极管瞬态抑制
| 型号： | HBAT-540B-TR2 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | High Performance Schottky Diode for Transient Suppression |
| 文件： | 总8页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Performance Schottky
Diode for Transient Suppression
Technical Data
HBAT-5400/-5402
HBAT-540B/-540C
HBAT-540E/-540F
Features
• Ultra-low Series Resistance
for Higher Current Handling
Package Lead Code
Identification
(Top View)
Description
The HBAT-5400 series of Schottky
diodes, commonly referred to as
clipping/clamping diodes, are
optimal for circuit and waveshape
preservation applications with
high speed switching. Low series
resistance, RS, makes them ideal
for protecting sensitive circuit
elements against high current
transients carried on data lines.
With picosecond switching, the
HBAT-540x can respond to noise
spikes with rise times as fast as
1 ns. Low capacitance minimizes
waveshape loss that causes signal
degradation.
• Low Capacitance
SINGLE
3
SERIES
3
• Low Series Resistance
• Lead-free Option Available
0, B
2, C
Applications
1
2
1
2
RF and computer designs that
require circuit protection, high-
speed switching, and voltage
clamping.
COMMON
ANODE
3
COMMON
CATHODE
3
E
F
1
2
1
2
2
Absolute Maximum Ratings, TA= 25ºC
Absolute Maximum[1]
Symbol
Parameter
Unit
HBAT-5400/-5402 HBAT-540B/-540C
IF
IF-peak
PT
DC Forward Current
mA
A
220
1.0
430
1.0
Peak Surge Current (1µs pulse)
Total Power Dissipation
Peak Inverse Voltage
mW
V
250
825
PINV
TJ
30
30
Junction Temperature
°C
150
150
TSTG
θJC
Storage Temperature
°C
°C/W
-65 to 150
500
-65 to 150
150
Thermal Resistance, junction to lead
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
Linear and Non-linear SPICE Model[2]
SPICE Parameters
0.08 pF
Parameter
Unit
V
Value
40
BV
CJO
EG
IBV
IS
pF
eV
A
3.0
0.55
10E-4
1.0E-7
1.0
2 nH
R
S
A
SPICE model
N
RS
PB
PT
M
Ω
V
2.4
Note:
0.6
2. To effectively model the packaged HBAT-540x
product, please refer to Application Note AN1124.
2
0.5
HBAT-540x DC Electrical Specifications, TA = +25°C[1]
Maximum Minimum
Forward Breakdown
Typical
Series
Maximum
Eff. Carrier
Part
Package
Typical
Number Marking Lead
HBAT-
Voltage
VF (mV)
Voltage Capacitance Resistance Lifetime
Code[2] Code Configuration
Package
VBR (V)
CT (pF)
RS (Ω)
τ (ps)
-5400
0
B
2
SOT-23
V0
V2
Single
Series
SOT-323
(3-lead SC-70)
800[3]
30[4]
3.0[5]
2.4
100[6]
-540B
-5402
-540C
SOT-23
SOT-323
(3-lead SC-70)
C
Common
Anode
SOT-323
(3-lead SC-70)
-540E
-540F
V3
V4
E
F
Common
Cathode
SOT-323
(3-lead SC-70)
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IF = 100 µA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA guaranteed by design.
3
Typical Performance
300
100
160
140
120
100
80
500
100
Max. safe junction temp.
10
1
10
1
60
40
0.1
0.1
TA = +75°C
TA = +25°C
TA = +75°C
TA = +25°C
TA = +75°C
A = +25°C
TA = –25°C
T
20
0
T
A = –25°C
0.4 0.5
– FORWARD VOLTAGE (V)
T
A = –25°C
150 200
I – FORWARD CURRENT (mA)
F
0.01
0.01
0
0.1
0.2
0.3
0.6
0
50
100
250
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
I
– FORWARD CURRENT (mA)
F
F
Figure 1. Forward Current vs.
Forward Voltage at Temperature for
HBAT-5400 and HBAT-5402.
Figure 2. Forward Current vs.
Forward Voltage at Temperature for
HBAT-540B, -540C, -540E, and -540F.
Figure 3. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-5400 and
HBAT-5402. Note: Data is calculated
from SPICE parameters.
160
3.0
2.5
2.0
Max. safe junction temp.
140
120
100
80
60
1.5
1.0
40
TA = +75°C
T
T
A = +25°C
A = –25°C
20
0
0
100 200 300 400 500 600
– FORWARD CURRENT (mA)
0
5
10
V – REVERSE VOLTAGE (V)
R
15
20
I
F
Figure 4. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-540B, -540C,
-540E, and -540F.
Figure 5. Total Capacitance vs.
Reverse Voltage.
Note: Data is calculated from SPICE
parameters.
4
Device Orientation
For Outlines SOT-23/323
Package Dimensions
Outline SOT-23
REEL
1.02 (0.040)
0.89 (0.035)
0.54 (0.021)
0.37 (0.015)
DATE CODE (X)
PACKAGE
MARKING
CODE (XX)
3
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
X X X
CARRIER
TAPE
2
1
USER
FEED
DIRECTION
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
TOP VIEW
COVER TAPE
0.152 (0.006)
0.066 (0.003)
3.06 (0.120)
2.80 (0.110)
TOP VIEW
4 mm
END VIEW
1.02 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
8 mm
SIDE VIEW
END VIEW
ABC
ABC
ABC
ABC
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Note: "AB" represents package marking code.
"C" represents date code.
Tape Dimensions and Product Orientation
For Outline SOT-23
P
P
D
2
E
F
P
0
W
D
1
t1
Ko
13.5° MAX
8° MAX
9° MAX
B
A
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
3.15 0.10
2.77 0.10
1.22 0.10
4.00 0.10
1.00 + 0.05
0.124 0.004
0.109 0.004
0.048 0.004
0.157 0.004
0.039 0.002
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
CARRIER TAPE
DIAMETER
PITCH
POSITION
D
1.50 + 0.10
4.00 0.10
1.75 0.10
0.059 + 0.004
0.157 0.004
0.069 0.004
P
E
0
WIDTH
W
8.00+0.30–0.10 0.315+0.012–0.004
THICKNESS
t1
0.229 0.013
0.009 0.0005
DISTANCE
BETWEEN
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CENTERLINE
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 0.05
0.079 0.002
2
5
Package Dimensions
Outline SOT-323 (SC-70 3 Lead)
PACKAGE
MARKING
CODE (XX)
1.30 (0.051)
REF.
DATE CODE (X)
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
X X X
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
0.20 (0.008)
0.10 (0.004)
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
8° MAX.
8° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
2.40 0.10
2.40 0.10
1.20 0.10
4.00 0.10
1.00 + 0.25
0.094 0.004
0.094 0.004
0.047 0.004
0.157 0.004
0.039 + 0.010
0
0
0
BOTTOM HOLE DIAMETER
D
1
PERFORATION
DIAMETER
PITCH
POSITION
D
1.55 0.05
4.00 0.10
1.75 0.10
0.061 0.002
0.157 0.004
0.069 0.004
P
E
0
CARRIER TAPE
COVER TAPE
DISTANCE
WIDTH
THICKNESS
W
8.00 0.30
0.254 0.02
0.315 0.012
0.0100 0.0008
t
1
WIDTH
TAPE THICKNESS
C
5.4 0.10
0.062 0.001
0.205 0.004
0.0025 0.00004
T
t
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 0.05
0.138 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2.00 0.05
0.079 0.002
2
6
cross the junction. The reverse
leakage current will be in the
nanoampere to microampere
range, depending upon the diode
type, the reverse voltage, and the
temperature.
Both diodes have similar barrier
heights; and this is indicated by
corresponding values of satura-
tion current, IS. Yet, different
contact diameters and epitaxial-
layer thickness result in very
different values of junction
capacitance, CJ and RS. This is
portrayed by their SPICE param-
eters in Table 1.
Applications Information
Schottky Diode Fundamentals
The HBAT-540x series of clipping/
clamping diodes are Schottky
devices. A Schottky device is a
rectifying, metal-semiconductor
contact formed between a metal
and an n-doped or a p-doped
semiconductor. When a metal-
semiconductor junction is formed,
free electrons flow across the
junction from the semiconductor
and fill the free-energy states in
the metal. This flow of electrons
creates a depletion or potential
across the junction. The differ-
ence in energy levels between
semiconductor and metal is called
a Schottky barrier.
In contrast to a conventional p-n
junction, current in the Schottky
diode is carried only by majority
carriers. Because no minority
carrier charge storage effects are
present, Schottky diodes have
carrier lifetimes of less than
100 ps and are extremely fast
switching semiconductors.
Schottky diodes are used as
rectifiers at frequencies of 50 GHz
and higher.
Table 1. HBAT-540x and
HSMS-270x SPICE Parameters.
HBAT-
540x
HSMS-
270x
Parameter
BV
CJ0
EG
IBV
IS
40 V
3.0 pF
0.55 eV
10E-4 A
1.0E-7 A
1.0
25 V
6.7 pF
0.55 eV
10E-4 A
1.4E-7 A
1.04
Another significant difference
between Schottky and p-n diodes
is the forward voltage drop.
Schottky diodes have a threshold
of typically 0.3 V in comparison to
that of 0.6 V in p-n junction
diodes. See Figure 6.
P-doped, Schottky-barrier diodes
excel at applications requiring
ultra low turn-on voltage (such as
zero-biased RF detectors). But
their very low, breakdown-voltage
and high series-resistance make
them unsuitable for the clipping
and clamping applications involv-
ing high forward currents and high
reverse voltages. Therefore, this
discussion will focus entirely on
n-doped Schottky diodes.
N
RS
PB
PT
M
2.4 Ω
0.6 V
0.65 Ω
0.6 V
2
2
0.5
0.5
At low values of IF ≤ 1 mA, the
forward voltages of the two
diodes are nearly identical.
However, as current rises above
10 mA, the lower series resistance
of the HSMS-270x allows for a
much lower forward voltage. This
gives the HSMS-270x a much
higher current handling capability.
The trade-off is a higher value of
junction capacitance. The forward
voltage and current plots illustrate
the differences in these two
Schottky diodes, as shown in
Figure 7.
P
N
METAL N
CAPACITANCE
CURRENT
CURRENT
0.3V
CAPACITANCE
Under a forward bias (metal
connected to positive in an
n-doped Schottky), or forward
voltage, VF, there are many
electrons with enough thermal
energy to cross the barrier poten-
tial into the metal. Once the
applied bias exceeds the built-in
potential of the junction, the
forward current, IF, will increase
rapidly as VF increases.
0.6V
–
+
–
+
BIAS VOLTAGE
BIAS VOLTAGE
PN JUNCTION
SCHOTTKY JUNCTION
Figure 6.
Through the careful manipulation
of the diameter of the Schottky
contact and the choice of metal
deposited on the n-doped silicon,
the important characteristics of
the diode (junction capacitance,
When the Schottky diode is
reverse biased, the potential
barrier for electrons becomes
large; hence, there is a small
probability that an electron will
have sufficient thermal energy to
C ; parasitic series resistance, RS;
J
breakdown voltage, V ; and
BR
forward voltage, VF,) can be
optimized for specific applica-
tions. The HSMS-270x series and
HBAT-540x series of diodes are a
case in point.
7
300
100
Consider the circuit shown in
Figure 8, in which two Schottky
diodes are used to protect a
11600 (V – I R )
F
F
S
HSMS-270x
nT
(1)
J
I = I
e
–1
F
S
HBAT-540x
circuit from noise spikes on a
stream of digital data. The ability
of the diodes to limit the voltage
spikes is related to their ability to
sink the associated current spikes.
The importance of current
10
1
2
1
T
J
1
298
–
–4060
n
T
(2)
(3)
J
I = I
e
S
0
298
.1
T = V I + T
θ
J
F F JC A
handling capacity is shown in
Figure 9, where the forward
.01
where:
0
0.1
0.2
0.3
0.4
0.5
0.6
voltage generated by a forward
current is compared in two
IF = forward current
IS = saturation current
VF = forward voltage
RS = series resistance
TJ = junction temperature
IO = saturation current at 25°C
n = diode ideality factor
V
– FORWARD VOLTAGE (V)
F
Figure 7. Forward Current vs.
Forward Voltage at 25°C.
diodes. The first is a conventional
Schottky diode of the type gener-
ally used in RF circuits, with an RS
of 7.7 Ω. The second is a Schottky
diode of identical characteristics,
save the RS of 1.0 Ω. For the
conventional diode, the relatively
high value of RS causes the
voltage across the diode’s termi-
nals to rise as current increases.
The power dissipated in the diode
heats the junction, causing RS to
climb, giving rise to a runaway
thermal condition. In the second
diode with low RS , such heating
does not take place and the
Because the automatic, pick-and-
place equipment used to assemble
these products selects dice from
adjacent sites on the wafer, the
two diodes which go into the
HBAT-5402 or HBAT-540C (series
pair) are closely matched—
without the added expense of
testing and binning.
θ
JC = thermal resistance from
junction to case (diode lead)
= θ + θ
package
chip
TA = ambient (diode lead)
temperature
Equation (1) describes the for-
ward V-I curve of a Schottky
Current Handling in Clipping/
Clamping Circuits
diode. Equation (2) provides the
value for the diode’s saturation
current, which value is plugged
into (1). Equation (3) gives the
value of junction temperature as a
function of power dissipated in
the diode and ambient (lead)
temperature.
The purpose of a clipping/clamp-
ing diode is to handle high cur-
rents, protecting delicate circuits
downstream of the diode. Current
handling capacity is determined
by two sets of characteristics,
those of the chip or device itself
and those of the package into
which it is mounted.
voltage across the diode terminals
is maintained at a low limit even
at high values of current.
Maximum reliability is obtained in
a Schottky diode when the steady
state junction temperature is
maintained at or below 150°C,
although brief excursions to
higher junction temperatures can
be tolerated with no significant
impact upon mean-time-to-failure,
MTTF. In order to compute the
junction temperature, Equations
(1) and (3) below must be simulta-
neously solved.
6
5
4
noisy data-spikes
current
Vs
R
= 7.7 Ω
s
limiting
3
2
long cross-site cable
pull-down
R
= 1.0 Ω
s
1
0
0V
(or pull-up)
voltage limited to
Vs + Vd
0V – Vd
0
0.1
0.2
0.3
0.4
0.5
I
– FORWARD CURRENT (mA)
F
Figure 8. Two Schottky Diodes
Are Used for Clipping/Clamping in
a Circuit.
Figure 9. Comparison of Two
Diodes.
The key factors in these equations package thermal resistance on the current of 330 mA when the
are: RS, the series resistance of the current handling capability of
diode’s terminals are maintained
at 75°C.
diode where heat is generated
under high current conditions;
these diodes can be seen in
Figures 3 and 4. Here the com-
puted values of junction tempera-
ture vs. forward current are
θ
, the chip thermal resistance
For pulsed currents and transient
current spikes of less than one
chip
of the Schottky die; and θ
,
package
or the package thermal resistance. shown for three values of ambient microsecond in duration, the
temperature. The SOT-323 prod-
ucts, with their copper
junction does not have time to
reach thermal steady state.
RS for the HBAT-540x family of
diodes is typically 2.4 Ω, other
leadframes, can safely handle
than the HSMS-270x family, this is almost twice the current of the
Moreover, the diode junction may
be taken to temperatures higher
than 150°C for short timeperiods
without impacting device MTTF.
Because of these factors, higher
currents can be safely handled.
The HBAT-540x family has the
second highest current handling
capability of any Agilent diode,
next to the HSMS-270x series.
the lowest of any Schottky diode
available. Chip thermal resistance the term “ambient temperature”
is typically 40°C/W; the thermal
resistance of the iron-alloy-
leadframe, SOT-23 package is
typically 460°C/W; and the thermal that the HBAT-540B and
resistance of the copper-
leadframe, SOT-323 package is
typically 110°C/W. The impact of
larger SOT-23 diodes. Note that
refers to the temperature of the
diode’s leads, not the air around
the circuit board. It can be seen
HBAT-540C products in the
SOT-323 package will safely
withstand a steady-state forward
Part Number Ordering Information
Part Number
No. of Devices
Container
HBAT-5400-BLK
HBAT-5400-TR1
HBAT-5400-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-5402-BLK
HBAT-5402-TR1
HBAT-5402-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-540B-BLK
HBAT-540B-TR1
HBAT-540B-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
www.agilent.com/semiconductors
HBAT-540C-BLK
HBAT-540C-TR1
HBAT-540C-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
For product information and a complete list of
distributors, please go to our web site.
13" Reel
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
HBAT-540E-BLK
HBAT-540E-TR1
HBAT-540E-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
Europe: +49 (0) 6441 92460
China: 10800 650 0017
13" Reel
Hong Kong: (65) 6756 2394
HBAT-540F-BLK
HBAT-540F-TR1
HBAT-540F-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
13" Reel
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Note: For lead-free option, the part number will have the character "G"
Taiwan: (65) 6755 1843
at the end, eg. HBAT-540x-TR2G for a 10,000 lead-free reel.
Data subject to change.
Copyright © 2003 Agilent Technologies, Inc.
Obsoletes 5968-7959E
March 24, 2004
5989-0472EN
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