HMPS-282X [AGILENT]
MiniPak Surface Mount RF Schottky Barrier Diodes; MINIPAK表面贴装射频肖特基势垒二极管
| 型号： | HMPS-282X |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | MiniPak Surface Mount RF Schottky Barrier Diodes |
| 文件： | 总8页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent HMPS-282x Series
MiniPak Surface Mount
RF Schottky Barrier Diodes
Data Sheet
Features
• Surface mount MiniPak package
– low height, 0.7 mm (0.028") max.
– small footprint, 1.75 mm2
(0.0028 inch2)
• Better thermal conductivity for
higher power dissipation
• Single and dual versions
The HMPS-282x family of diodes
offers the best all-around choice
for most applications, featuring
low series resistance, low forward
voltage at all current levels and
good RF characteristics.
Description/Applications
These ultra-miniature products
represent the blending of Agilent
Technologies’ proven semiconduc-
tor and the latest in leadless
packaging. This series of Schottky
diodes is the most consistent and
best all-round device available,
and finds applications in mixing,
detecting, switching, sampling,
clamping and wave shaping at
frequencies up to 6 GHz. The
MiniPak package offers reduced
parasitics when compared to
conventional leaded diodes, and
lower thermal resistance.
• Matched diodes for consistent
performance
• Low turn-on voltage (as low as
0.34 V at 1 mA)
• Low FIT (Failure in Time) rate*
• Six-sigma quality level
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
*
For more information, see the Surface
Mount Schottky Reliability Data Sheet.
Pin Connections and
Package Marking
3
4
1
Package Lead Code Identification
(Top View)
AA
2
Single
Anti-parallel
Parallel
3
2
4
1
3
2
4
1
3
2
4
1
Product code Date code
Notes:
#0
#2
#5
1. Package marking provides orientation and
identification.
2. See “Electrical Specifications” for
appropriate package marking.
HMPS-282x Series Absolute Maximum Ratings[1], TC = 25°C
ESD WARNING:
Handling Precautions Should Be Taken To
Avoid Static Discharge.
Symbol
Parameter
Units
MiniPak 1412
If
Forward Current (1 µs pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance[2]
A
1
PIV
Tj
V
15
°C
°C
°C/W
150
Tstg
θjc
-65 to +150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the
device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is
made to the circuit board.
Electrical Specifications, TC = +25°C, Single Diode[4]
Maximum
Maximum
Minimum
Breakdown
Voltage
Maximum
Forward
Voltage
VF (mV)
Forward
Voltage
VF (V) @
IF (mA)
Reverse
Leakage
IR (nA) @
VR (V)
Typical
Part
Number
HMPS-
Package
Marking
Code
Maximum
Capacitance
CT (pF)
Dynamic
Resistance
RD (Ω)[4]
Lead
Code
Configuration
VBR (V)
2820
2822
2825
L
K
J
0
2
5
Single
Anti-parallel
Parallel
15
340
0.5 10
100
1
1.0
12
Test Conditions
IR = 100 µA
IF = 1 mA[1]
VF = 0 V
IF = 5 mA
f = 1 MHz[2]
Notes:
1. ∆VF for diodes in pairs is 15 mV maximum at 1 mA.
2. ∆CTO for diodes in pairs is 0.2 pF maximum.
3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. RD = RS + 5.2Ω at 25°C and If = 5 mA.
2
SPICE Parameters
Linear Equivalent Circuit Model Diode Chip
R
Parameter
Units
HMPS-282x
j
BV
CJ0
EG
IBV
IS
V
15
R
S
pF
eV
A
0.7
0.60
1E-4
2.2E-8
1.08
8.0
A
C
j
N
RS = series resistance (see Table of SPICE parameters)
Cj = junction capacitance (see Table of SPICE parameters)
RS
PB
PT
M
Ω
V
0.65
2
8.33 X 10-5 nT
Rj =
Ib + Is
0.5
where
Ib = externally applied bias current in amps
Is = saturation current (see table of SPICE parameters)
T = temperature, °K
n = ideality factor (see table of SPICE parameters)
Linear Circuit Model of the Diode’s Package
20 fF
3
4
30 fF
30 fF
2
1.1 nH
1
20 fF
Single diode package (HMPx-x8x0)
20 fF
0.05 nH
0.5 nH
0.5 nH
0.5 nH
0.05 nH
3
2
4
1
12 fF
30 fF
30 fF
0.05 nH
0.5 nH
0.05 nH
20 fF
Anti-parallel diode package (HMPx-x8x2)
20 fF
0.05 nH
0.5 nH
0.5 nH
0.5 nH
0.05 nH
3
2
4
1
12 fF
30 fF
30 fF
0.05 nH
0.5 nH
0.05 nH
20 fF
Parallel diode package (HMPx-x8x5)
3
HMPS-282x Series Typical Performance
Tc = 25°C (unless otherwise noted), Single Diode
1
100,000
100
TA = +125°C
A = +75°C
TA = +25°C
T
0.8
10,000
10
TA = –25°C
0.6
0.4
1000
100
1
0.1
TA = +125°C
TA = +75°C
0.2
0
10
1
TA = +25°C
0.01
0
2
4
6
8
0
5
10
15
0
0.10
0.20
0.30
0.40
0.50
V
– REVERSE VOLTAGE (V)
V
– REVERSE VOLTAGE (V)
V – FORWARD VOLTAGE (V)
R
R
F
Figure 3. Total Capacitance vs. Reverse
Voltage.
Figure 2. Reverse Current vs. Reverse Voltage
at Temperatures.
Figure 1. Forward Current vs. Forward
Voltage at Temperatures.
1000
100
30
10
30
10
100
1.0
I (Left Scale)
F
I (Left Scale)
F
10
10
1
∆V (Right Scale)
F
1
1
∆V (Right Scale)
F
0.3
0.3
1.4
1
0.10
0.1
0.25
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
0.15
0.20
I
– FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (V)
V - FORWARD VOLTAGE (V)
F
F
F
Figure 4. Dynamic Resistance vs. Forward
Current.
Figure 5. Typical V Match, Series Pairs and
f
Quads at Mixer Bias Levels.
Figure 6. Typical V Match, Series Pairs at
f
Detector Bias Levels.
1
10
1
10
9
DC bias = 3 µA
-25°C
0.1
+25°C
+75°C
0.1
0.01
8
18 nH HSMS-282B
3.3 nH
HSMS-282B
100 pF
+25°C
RF in
Vo
RF in
Vo
0.001
0.01
7
68 Ω
100 pF
0.0001
1E-005
100 KΩ
4.7 KΩ
0.001
6
-40
-30
-20
-10
0
-20
-10
P
0
10
20
30
0
2
4
6
8
10
12
P
– INPUT POWER (dBm)
– INPUT POWER (dBm)
in
LOCAL OSCILLATOR POWER (dBm)
in
Figure 7. Typical Output Voltage vs. Input
Power, Small Signal Detector Operating at
850 MHz.
Figure 8. Typical Output Voltage vs. Input
Power, Large Signal Detector Operating at
915 MHz.
Figure 9. Typical Conversion Loss vs. L.O.
Drive, 2.0 GHz (Ref AN997).
4
SMT Assembly
passes through one or more
Assembly Information
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the MiniPak
package, will reach solder reflow
temperatures faster than those
with a greater mass.
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporat-
ing solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The MiniPak diode is mounted to
the PCB or microstrip board using
the pad pattern shown in
Figure 10.
0.4
0.5
0.4
0.3
0.5
0.3
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of the board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 255°C.
Figure 10. PCB Pad Layout, MiniPak
(dimensions in mm).
Agilent’s diodes have been quali-
fied to the time-temperature
profile shown in Figure 12. This
profile is representative of an IR
reflow type of surface mount
assembly process.
This mounting pad pattern is
satisfactory for most applications.
However, there are applications
where a high degree of isolation is
required between one diode and
the other is required. For such
applications, the mounting pad
pattern of Figure 11 is
These parameters are typical for a
surface mount assembly process
for Agilent diodes. As a general
guideline, the circuit board and
components should be exposed
only to the minimum temperatures
and times necessary to achieve a
uniform reflow of solder.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
recommended.
0.40 mm via hole
(4 places)
350
300
0.20
Peak Temperature
Min. 240°C
2.40
0.8
Max. 255°C
250
221
200
Reflow Time
Min. 60 s
Max. 90 s
0.40
150
2.60
Preheat 130–170°C
100
Min. 60 s
Figure 11. PCB Pad Layout, High Isolation
MiniPak (dimensions in mm).
Max. 150 s
50
0
This pattern uses four via holes,
connecting the crossed ground
strip pattern to the ground plane
of the board.
0
30
60
90
120
150
180 210
240
270
300
330 360
TIME (seconds)
Figure 12. Surface Mount Assembly Temperature Profile.
5
MiniPak Outline Drawing
1.44 (0.058)
1.40 (0.056)
1.12 (0.045)
1.08 (0.043)
0.82 (0.033)
0.78 (0.031)
4
1
3
2
1.20 (0.048)
1.16 (0.046)
0.32 (0.013)
0.28 (0.011)
0.00
Top view
-0.07 (-0.003)
-0.03 (-0.001)
0.92 (0.037)
0.88 (0.035)
0.00
-0.07 (-0.003) 0.42 (0.017)
-0.03 (-0.001) 0.38 (0.015)
1.32 (0.053)
1.28 (0.051)
0.70 (0.028)
0.58 (0.023)
Bottom view
Side view
6
Device Orientation
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
USER
FEED
DIRECTION
COVER TAPE
Note: “AA” represents package marking code. Package marking is
right side up with carrier tape perforations at top. Conforms to
Electronic Industries RS-481, “Taping of Surface Mounted
Components for Automated Placement.” Standard quantity is 3,000
devices per reel.
Tape Dimensions and Product Orientation
For Outline 4T (MiniPak 1412)
P
P
D
2
P
0
E
F
W
C
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
1
K
5° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
1.40 ± 0.05
1.63 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012 - 0.004
t
0.254 ± 0.02
0.010 ± 0.001
1
COVER TAPE
WIDTH
C
5.40 ± 0.10
0.213 ± 0.004
TAPE THICKNESS
T
0.062 ± 0.001
0.002 ± 0.00004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
7
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
January 22, 2001
5988-1551EN
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