HSCH-5317 [AGILENT]
Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz); 梁式引线肖特基二极管混频器和探测器（ 1 - 26千兆赫）
| 型号： | HSCH-5317 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz) |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Beam Lead Schottky Diodes for
Mixers and Detectors
( 1– 26 GHz)
Technical Data
HSCH-5300 Series
Features
Outline 07
• Platinum Tri-Metal System
CATHODE
GOLD LEADS
High Temperature Stability
130 (5)
100 (4)
• Silicon Nitride Passivation
Stable, Reliable Performance
135 (5)
90 (3)
• Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
135 (5)
90 (3)
• High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
225 (9)
200 (8)
310 (12)
250 (10)
225 (9)
170 (7)
• Rugged Construction
4 Grams Minimum Lead Pull
12 (.5)
8 (.3)
• Low Capacitance
30 MIN (1)
0.10 pF Max. at 0 V
• Polyimide Scratch Protection
SILICON
GLASS
710 (28)
670 (26)
60 (2)
40 (1)
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
DIMENSIONS IN µm (1/1000 inch)
Maximum Ratings
Pulse Power Incident at TA = 25°C ..........................................................1 W
Pulse Width = 1 µs, Du = 0.001
CW Power Dissipation at TA = 25°C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
contaminants which could
otherwise lead to IR drift.
TOPR – Operating Temperature Range ...............................-65°C to +175 °C
TSTG – Storage Temperature Range ....................................-65°C to +200°C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ............................... +350°C for 10 sec. max.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical
6 gram pull strength) without
degrading capacitance.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
2
Applications
versions are available as
HSCH-5331 and -5333.
Assembly Techniques
The beam lead diode is ideally
suited for use in stripline or
microstrip circuits. Its small
physical size and uniform dimen-
sions give it low parasitics and
repeatable RF characteristics
through K-band.
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
For applications requiring
guaranteed RF-tested perform-
ance up to 26 GHz, the HSCH-5340
is selected with batch match units
available as the HSCH-5341. The
HSCH-5318 is selected for 6.2 dB
maximum noise figure at
9.375 GHz; with RF batch match
units available as the HSCH-5319.
The HSCH-5314 is rated at 7.2 dB
maximum noise figure at 16 GHz
with RF batch match units
The basic medium barrier devices
in this family are DC tested
Substrates.”
HSCH-5310, -5312, and -5316. A
batch matched version is available
as the HSCH-5317. Equivalent low
barrier devices are HSCH-5330,
-5332, and -5336. Batch matched
available as the HSCH-5315.
Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C
IF
Min.
Break-
down
Max.
Dynamic
Resis-
Max.
Total
Max.
Noise
Impedance
ZIF (Ω)
Max.
Max.
Part
Batch*
Capaci- Forward Leakage
Number Matched
Figure
Max.
SWR
Voltage
tance
tance
CT ( pF)
Voltage
Current
IR ( nA)
HSCH-
HSCH-
Barrier NF ( dB)
Min. Max.
VBR ( V)
RD (Ω)
V ( mV)
F
5318
5319
Medium
6.2 at
9.375 GHz
200
400
1.5:1
4
12
16
20
0.25
0.15
0.10
500
100
5314
5340
5315
5341
7.2 at
16 GHz
Low
7.5 at
150
350
1.5:1
4
375
400
26 GHz
Test
Conditions
∆NF ≤
0.3 dB
DC Load Resistance - 0 Ω
LO Power = 1 mW
IR ≤ 10 µA IF = 5 mA
V = 0 V
f = 1 MHz
IF = 1 mA
V = 1 V
R
R
∆ZIF
≤
IF = 30 MHz, 1.5 dB NF
25 Ω
*Minimum batch size 20 units.
Note:
1. CT = CJ + 0.02 pF (fringing cap).
3
Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C
Minimum
Breakdown
Voltage
Maximum
Dynamic
Resistance
RD (Ω)
Maximum
Total
Capacitance
CT ( pF)
Maximum
Forward
Voltage
Maximum
Leakage
Current
IR ( nA)
Part
Number
HSCH-
Batch*
Matched
HSCH-
Barrier
VBR ( V)
V ( mV)
F
5316
5312
5310
5317
Medium
4
12
16
20
0.25
0.15
0.10
500
100
5336
5332
5330
Low
4
12
16
20
0.25
0.15
0.10
375
400
5333
5331
Test
Conditions
∆V ≤ 15 mV
IR ≤ 10 µA
IF = 5 mA
V = 0 V
IF = 1 mA
V = 1 V
F
R
R
@ 5 mA
f = 1 MHz
*Minimum batch size 20 units.
Typical Detector Characteristics at T = 25°C
A
Medium Barrier and Low Barrier ( DC Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
TSS
-54
dBm
mV/µW
Ω
20 µA Bias, RL = 100 KΩ
Video Bandwidth = 2 MHz
f = 10 GHz
Voltage Sensitivity
Video Resistance
γ
6.6
RV
1400
Low Barrier ( Zero Bias)
Parameter
Symbol
Typical Value
Units
Test Conditions
Tangential Sensitivity
TSS
-44
dBm
Zero Bias, RL = 10 MΩ
Video Bandwidth = 2 MHz
f = 10 GHz
Voltage Sensitivity
Video Resistance
γ
10
mV/µW
MΩ
RV
1.8
SPICE Parameters
HSCH-5316 HSCH-5312
HSCH-5330
Parameter Units HSCH-5318 HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332 HSCH-5336
BV
CJ0
EG
IBV
IS
V
pF
eV
A
5
0.2
5
0.13
5
0.09
5
0.09
5
0.13
0.69
10E -5
4 x 10E -8
1.08
9
5
0.20
0.69
10E-5
4 x 10E-8
1.08
6
0.69
10E -5
3 x 10E -10
1.08
5
0.69
0.69
0.69
10E -5
3 x 10E -10
1.08
10E -5
3 x 10E -10
1.08
10E -5
4 x 10E -10
1.08
A
N
RS
PB
PT
M
Ω
9
13
13
V
0.65
2
0.65
0.65
0.5
0.5
0.5
2
2
2
2
2
0.5
0.5
0.5
0.5
0.5
0.5
4
Typical Parameters
100
10
100
7.5
7.0
6.5
+125°C
+25°C
-55°C
+125°C
+25°C
-55°C
10
1
0.1 pF
0.15 pF
1
6.0
0.25 pF
0.1
0.01
0.1
0.01
5.5
5.0
0
4
2
8
12
16 20
24 28
26
0
0.2
0.4
0.6
0.8
0
0.2
0.4
0.6
0.8
1.0
9.375
FREQUENCY (GHz)
FORWARD VOLTAGE (V)
FORWARD VOLTAGE (V)
Figure 3. Typical Noise Figure vs.
Frequency.
Figure 2. Typical Forward
Characteristics for Low Barrier Beam
Lead Diodes. HSCH-5330, -5340 Series.
Figure 1. Typical Forward
Characteristics for Medium Barrier
Beam Lead Diodes. HSCH-5310 Series.
18
20 µA
50 µA
10
26 GHz
20
150 µA
10
26 GHz
2
2
Figure 4. Typical Admittance Characteristics with 1 mA Self
Bias. HSCH-5340 and -5341.
Figure 5. Typical Admittance Characteristics with External
Bias. HSCH-5340 and -5341.
5
20 µA
50 µA
1 mA
150 µA
18 GHz
1.5 mA
3 mA
18 GHz
10
10
2
2
Figure 7. Typical Admittance Characteristics with External
Bias. HSCH-5314 and -5315.
Figure 6. Typical Admittance Characteristics with Self Bias.
HSCH-5314 and -5315.
20 µA
50 µA
150 µA
12 GHz
12 GHz
1 mA
1.5 mA
3 mA
6
2
2
Figure 8. Typical Admittance Characteristics with Self Bias.
HSCH-5318 and -5319.
Figure 9. Typical Admittance Characteristics with External
Bias. HSCH-5318 and -5319.
Models for Each Beam Lead Schottky Diode
HSCH-5340, -5341
1 mA Self Bias
0.03 pF
0.1 nH
0.04 nH
11 Ω
267 Ω
0.11 pF
Other HSCH-53XX
Self Bias
0.02 pF
0.1 nH
R
C
R
j
s
j
1.0 mA Self Bias
1.5 mA Self Bias
3.0 mA Self Bias
Part Numbers
HSCH-5314, -5315
HSCH-5318, -5319
RS (Ω)
Rj ( Ω)
393
Cj ( pF) RS (Ω)
Rj ( Ω)
232
Cj ( pF) RS ( Ω)
Rj ( Ω)
150
Cj ( pF)
5.0
5.1
0.11
0.16
5.2
5.0
0.11
0.16
5.0
5.0
0.12
0.19
244
178
109
HSCH-5340, -5341
External Bias
0.03 pF
R
0.1 nH
0.04 nH
j
11 Ω
C
j
20 µA DC Bias
50 µA DC Bias
Rj ( Ω) Cj ( pF)
0.09
150 µA DC Bias
Part Numbers
HSCH-5340, -5341
Rj ( Ω)
Cj ( pF)
0.09
Rj ( Ω)
Cj ( pF)
0.10
1300
560
187
Other HSCH-53XX
External Bias
0.02 pF
R
R
j
0.1 nH
s
C
j
20 µADC Bias
50 µADC Bias
150 µADC Bias
Part Numbers
HSCH-5314, -5315
HSCH-5318, -5319
RS (Ω)
2.8
Rj (Ω) Cj ( pF) RS (Ω)
Rj ( Ω)
520
Cj ( pF) RS ( Ω)
Rj ( Ω)
180
Cj ( pF)
1300
1300
0.11
0.18
4.7
3.9
0.12
0.19
2.7
4.7
0.13
0.20
5.1
520
180
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Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8849E (11/99)
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