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MSA-0470

更新时间：2025-07-09 02:19:29

品牌：AGILENT

描述：Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0470 概述

Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器

MSA-0470 数据手册

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Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-0470

high reliability package. This

Features

70 mil Package

MMIC is designed for use as a

general purpose 50 Ω gain block.

Typical applications include

narrow and broad band IF and RF

amplifiers in industrial and

military applications.

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 4.0 GHz

• 12.5 dBm Typical P_{1 dB}at

1.0 GHz

• 8.5 dB Typical Gain at

1.0 GHz

The MSA-series is fabricated using

HP’s10GHzf ,25 GHzf

MAX

• Unconditionally Stable

(k>1)

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

• Hermetic Gold-ceramic

Microstrip Package

Description

The MSA-0470 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a hermetic,

Typical Biasing Configuration

bias

V_CC> 7 V

RFC (Optional)

block

MSA

OUT

= 5.25 V

5965-9576E

6-334

MSA-0470 Absolute Maximum Ratings

Thermal Resistance^[2,4]

Parameter

AbsoluteMaximum^[1]

θ_jc=115°C/W

Device Current

Power Dissipation^[2,3]

RF Input Power

Junction Temperature

Storage Temperature

100mA

650mW

+13dBm

200°C

–65to200°C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T_CASE=25°C.

3. Derate at 8.7 mW/°C for T_C> 125°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of θ_jcthan do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Electrical Specifications^[1], T_A= 25°C

Symbol

Parameters and Test Conditions: I_d= 50 mA, Z_O= 50 Ω

Units Min. Typ. Max.

G_P

PowerGain(|S₂₁|²)

f=0.1GHz

7.5

8.5

± 0.6

4.0

9.5

∆G_P

f_{3 dB}

Gain Flatness

f=0.1to2.5GHz

± 1.0

3 dB Bandwidth

GHz

Input VSWR

f=0.1to2.5GHz

f=1.0GHz

1.7:1

2.0:1

6.5

VSWR

Output VSWR

50 Ω Noise Figure

dBm

psec

P_{1 dB}

IP₃

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

f=1.0GHz

12.5

25.5

125

f=1.0GHz

t_D

f=1.0GHz

V_d

Device Voltage

4.75

5.25

–8.0

5.75

dV/dT

Device Voltage Temperature Coefficient

mV/°C

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

6-335

MSA-0470 Typical Scattering Parameters (Z_O= 50 Ω, T_A= 25°C, I_d= 50 mA)

S₁₁

S₂₁

S₁₂

S₂₂

Freq.

GHz

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.18

.17

.16

.21

.26

.32

.37

.40

.41

.42

179

8.5

8.4

8.3

8.2

7.8

7.3

6.5

5.7

4.7

3.9

3.1

2.67

2.65

2.64

2.61

2.56

2.46

2.33

2.12

1.93

1.73

1.57

1.44

176

172

163

155

147

138

117

–16.4

–16.2

–16.1

–15.9

–15.5

–14.6

–13.8

–13.5

–13.2

–12.6

–12.4

–11.9

.151

.152

.155

.158

.161

.169

.186

.204

.212

.220

.234

.239

.255

.10

.13

.16

.19

.22

.29

.33

.36

.40

.39

.37

–14

–30

179

–50

–179

–176

–174

–166

–163

–162

–170

–177

175

–67

–79

–90

–111

–131

–142

–156

–164

–170

–173

–176

–1

–6

166

155

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T_A= 25°C

(unless otherwise noted)

= +125°C

= +25°C

= –55°C

Gain Flat to DC

0.1 GHz

1.0 GHz

2.0 GHz

0.1

0.3 0.5

1.0

3.0 6.0

(mA)

FREQUENCY (GHz)

(V)

Figure 1. Typical Power Gain vs.

Frequency, T_A= 25°C, I_d= 50 mA.

Figure 3. Power Gain vs. Current.

Figure 2. Device Current vs. Voltage.

7.5

7.0

1 dB

= 70 mA

6.5

6.0

= 50 mA

= 30 mA

= 50 mA

= 70 mA

0.1

5.5

0.2 0.3 0.5

1.0

2.0

4.0

0.1

0.2 0.3 0.5

1.0

2.0

–55 –25

+25

+85

+125

FREQUENCY (GHz)

TEMPERATURE (°C)

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I_d=50mA.

6-336

70 mil Package Dimensions

.040

1.02

GROUND

.020

.508

RF OUTPUT

AND BIAS

RF INPUT

Notes:

(unless otherwise specified)

GROUND

1. Dimensions are

2. Tolerances

in .xxx = ± 0.005

mm .xx = ± 0.13

.070

1.70

.004 ± .002

.10 ± .05

.495 ± .030

12.57 ± .76

.035

.89

6-337

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