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元器件型号: |
MSA-0470 |
生产厂家: |
AGILENT TECHNOLOGIES, LTD.
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描述和应用: |
Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器 放大器射频微波 |
PDF文件: |
总4页 (文件大小:52K) |
下载文档: |
下载PDF数据表文档文件 |
型号参数:MSA-0470参数 |
生命周期 | Transferred |
IHS 制造商 | AVANTEK INC |
Reach Compliance Code | unknown |
风险等级 | 5.71 |
安装特点 | SURFACE MOUNT |
端子数量 | 4 |
封装主体材料 | CERAMIC |
封装等效代码 | SL,4LEAD,.07SQ |
电源 | 5.25 V |
子类别 | RF/Microwave Amplifiers |
最大压摆率 | 70 mA |
表面贴装 | YES |
技术 | BIPOLAR |
Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0470
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 12.5 dBm Typical P
1 dB
at
1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
high reliability package. This
MMIC is designed for use as a
general purpose 50
Ω
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
70 mil Package
Description
The MSA-0470 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.25 V
2
5965-9576E
6-334
MSA-0470 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.7 mW/°C for T
C
> 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±
0.6
4.0
1.7:1
2.0:1
Max.
9.5
±
1.0
dB
dBm
dBm
psec
V
mV/°C
4.75
6.5
12.5
25.5
125
5.25
–8.0
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
6-335
MSA-0470 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.18
.18
.18
.17
.16
.16
.16
.21
.26
.32
.37
.40
.41
.42
179
179
179
–179
–176
–174
–166
–163
–162
–170
–177
175
166
155
8.5
8.5
8.5
8.5
8.4
8.3
8.2
7.8
7.3
6.5
5.7
4.7
3.9
3.1
2.67
2.67
2.67
2.65
2.64
2.61
2.56
2.46
2.33
2.12
1.93
1.73
1.57
1.44
176
172
163
155
147
138
117
97
83
65
38
33
20
7
–16.4
–16.4
–16.4
–16.2
–16.1
–15.9
–15.5
–14.6
–13.8
–13.5
–13.2
–12.6
–12.4
–11.9
.151
.151
.152
.155
.158
.161
.169
.186
.204
.212
.220
.234
.239
.255
1
2
3
5
8
6
9
9
12
10
7
3
–1
–6
.10
.10
.13
.16
.19
.22
.29
.33
.36
.40
.40
.40
.39
.37
–14
–30
–50
–67
–79
–90
–111
–131
–142
–156
–164
–170
–173
–176
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
G
p
(dB)
8
6
4
20
2
0
0
1
2
3
4
V
d
(V)
5
6
7
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
G
p
(dB)
I
d
= 70 mA
P
1 dB
(dBm)
15
NF (dB)
12
9
NF (dB)
6
3
0.1
I
d
= 30 mA
6.0
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
I
d
= 50 mA
6.5
0.2 0.3
0.5
1.0
2.0
4.0
I
d
(mA)
Gain Flat to DC
7
80
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
9
8
40
6
0.1
0.3 0.5
1.0
3.0
6.0
4
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 50 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
13
P
1 dB
(dBm)
12
11
10
9
G
p
(dB)
8
7
6
5
–55
–25
+25
NF
G
P
8
7
6
+85
5
+125
P
1 dB
21
18
7.5
7.0
5.5
FREQUENCY (GHz)
TEMPERATURE (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=50mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-336
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-337
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