MSA-0470 [AGILENT]

Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
MSA-0470
元器件型号: MSA-0470
生产厂家: AGILENT TECHNOLOGIES, LTD.    AGILENT TECHNOLOGIES, LTD.
描述和应用:

Cascadable Silicon Bipolar MMIC Amplifier
级联硅双极MMIC放大器

放大器射频微波
PDF文件: 总4页 (文件大小:52K)
下载文档:  下载PDF数据表文档文件
型号参数:MSA-0470参数
生命周期Transferred
IHS 制造商AVANTEK INC
Reach Compliance Codeunknown
风险等级5.71
安装特点SURFACE MOUNT
端子数量4
封装主体材料CERAMIC
封装等效代码SL,4LEAD,.07SQ
电源5.25 V
子类别RF/Microwave Amplifiers
最大压摆率70 mA
表面贴装YES
技术BIPOLAR
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0470
Features
• Cascadable 50
Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 12.5 dBm Typical P
1 dB
at
1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
high reliability package. This
MMIC is designed for use as a
general purpose 50
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
70 mil Package
Description
The MSA-0470 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.25 V
2
5965-9576E
6-334
MSA-0470 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 115°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8.7 mW/°C for T
C
> 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±
0.6
4.0
1.7:1
2.0:1
Max.
9.5
±
1.0
dB
dBm
dBm
psec
V
mV/°C
4.75
6.5
12.5
25.5
125
5.25
–8.0
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
6-335
MSA-0470 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.18
.18
.18
.17
.16
.16
.16
.21
.26
.32
.37
.40
.41
.42
179
179
179
–179
–176
–174
–166
–163
–162
–170
–177
175
166
155
8.5
8.5
8.5
8.5
8.4
8.3
8.2
7.8
7.3
6.5
5.7
4.7
3.9
3.1
2.67
2.67
2.67
2.65
2.64
2.61
2.56
2.46
2.33
2.12
1.93
1.73
1.57
1.44
176
172
163
155
147
138
117
97
83
65
38
33
20
7
–16.4
–16.4
–16.4
–16.2
–16.1
–15.9
–15.5
–14.6
–13.8
–13.5
–13.2
–12.6
–12.4
–11.9
.151
.151
.152
.155
.158
.161
.169
.186
.204
.212
.220
.234
.239
.255
1
2
3
5
8
6
9
9
12
10
7
3
–1
–6
.10
.10
.13
.16
.19
.22
.29
.33
.36
.40
.40
.40
.39
.37
–14
–30
–50
–67
–79
–90
–111
–131
–142
–156
–164
–170
–173
–176
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
G
p
(dB)
8
6
4
20
2
0
0
1
2
3
4
V
d
(V)
5
6
7
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
G
p
(dB)
I
d
= 70 mA
P
1 dB
(dBm)
15
NF (dB)
12
9
NF (dB)
6
3
0.1
I
d
= 30 mA
6.0
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
I
d
= 50 mA
6.5
0.2 0.3
0.5
1.0
2.0
4.0
I
d
(mA)
Gain Flat to DC
7
80
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
9
8
40
6
0.1
0.3 0.5
1.0
3.0
6.0
4
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 50 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
13
P
1 dB
(dBm)
12
11
10
9
G
p
(dB)
8
7
6
5
–55
–25
+25
NF
G
P
8
7
6
+85
5
+125
P
1 dB
21
18
7.5
7.0
5.5
FREQUENCY (GHz)
TEMPERATURE (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=50mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-336
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-337
相关元器件产品Datasheet PDF文档

MSA0485

Cascadable Silicon Bipolar MMIC Amplifier
25 AGILENT

MSA0485

Cascadable Silicon Bipolar MMIC Amplifier
15 AGILENT

MSA-0485

Cascadable Silicon Bipolar MMIC Amplifier
22 AGILENT

MSA-0485

Cascadable Silicon Bipolar MMIC Amplifier
37 AGILENT

MSA-0485

Cascadable Silicon Bipolar MMIC Amplifier
14 AGILENT

MSA-0486

Cascadable Silicon Bipolar MMIC Amplifier
121 AGILENT