MSA-0470 [AGILENT]

Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-0470

Features

• Cascadable 50

Ω

Gain Block

• 3 dB Bandwidth:

DC to 4.0 GHz

• 12.5 dBm Typical P

1 dB

at

1.0 GHz

• 8.5 dB Typical Gain at

1.0 GHz

• Unconditionally Stable

(k>1)

• Hermetic Gold-ceramic

Microstrip Package

high reliability package. This

MMIC is designed for use as a

general purpose 50

Ω

gain block.

Typical applications include

narrow and broad band IF and RF

amplifiers in industrial and

military applications.

The MSA-series is fabricated using

HP’s 10 GHz f

T

, 25 GHz f

MAX

,

silicon bipolar MMIC process

which uses nitride self-alignment,

ion implantation, and gold metalli-

zation to achieve excellent

performance, uniformity and

reliability. The use of an external

bias resistor for temperature and

current stability also allows bias

flexibility.

70 mil Package

Description

The MSA-0470 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a hermetic,

Typical Biasing Configuration

R

bias

V

CC

> 7 V

RFC (Optional)

4

C

block

3

IN

1

MSA

C

block

OUT

V

d

= 5.25 V

2

5965-9576E

6-334

MSA-0470 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Absolute Maximum

[1]

100 mA

650 mW

+13 dBm

200°C

–65 to 200°C

Thermal Resistance

[2,4]

:

θ

jc

= 115°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 8.7 mW/°C for T

C

> 125°C.

4. The small spot size of this technique results in a higher, though more

accurate determination of

θ

jc

than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

∆G

P

f

3 dB

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

Parameters and Test Conditions: I

d

= 50 mA, Z

O

= 50

Ω

Power Gain (|S

21

|

2

)

Gain Flatness

3 dB Bandwidth

Input VSWR

Output VSWR

50

Ω

Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 0.1 GHz

f = 0.1 to 2.5 GHz

Units

dB

dB

GHz

Min.

7.5

Typ.

8.5

±

0.6

4.0

1.7:1

2.0:1

Max.

9.5

±

1.0

dB

dBm

dBm

psec

V

mV/°C

4.75

6.5

12.5

25.5

125

5.25

–8.0

5.75

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

6-335

MSA-0470 Typical Scattering Parameters (Z

O

= 50

Ω,

T

A

= 25°C, I

d

= 50 mA)

Freq.

GHz

S

11

Mag

Ang

dB

S

21

Mag

Ang

dB

S

12

Mag

Ang

Mag

S

22

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

.18

.18

.18

.17

.16

.16

.16

.21

.26

.32

.37

.40

.41

.42

179

179

179

–179

–176

–174

–166

–163

–162

–170

–177

175

166

155

8.5

8.5

8.5

8.5

8.4

8.3

8.2

7.8

7.3

6.5

5.7

4.7

3.9

3.1

2.67

2.67

2.67

2.65

2.64

2.61

2.56

2.46

2.33

2.12

1.93

1.73

1.57

1.44

176

172

163

155

147

138

117

97

83

65

38

33

20

7

–16.4

–16.4

–16.4

–16.2

–16.1

–15.9

–15.5

–14.6

–13.8

–13.5

–13.2

–12.6

–12.4

–11.9

.151

.151

.152

.155

.158

.161

.169

.186

.204

.212

.220

.234

.239

.255

1

2

3

5

8

6

9

9

12

10

7

3

–1

–6

.10

.10

.13

.16

.19

.22

.29

.33

.36

.40

.40

.40

.39

.37

–14

–30

–50

–67

–79

–90

–111

–131

–142

–156

–164

–170

–173

–176

A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

A

= 25°C

(unless otherwise noted)

12

10

60

G

p

(dB)

8

6

4

20

2

0

0

1

2

3

4

V

d

(V)

5

6

7

5

0.1 GHz

1.0 GHz

2.0 GHz

20

30

40

50

I

d

(mA)

60

70

G

p

(dB)

I

d

= 70 mA

P

1 dB

(dBm)

15

NF (dB)

12

9

NF (dB)

6

3

0.1

I

d

= 30 mA

6.0

I

d

= 30 mA

I

d

= 50 mA

I

d

= 70 mA

0.1

0.2 0.3

0.5

1.0

2.0

I

d

= 50 mA

6.5

0.2 0.3

0.5

1.0

2.0

4.0

I

d

(mA)

Gain Flat to DC

7

80

T

C

= +125°C

T

C

= +25°C

T

C

= –55°C

9

8

40

6

0.1

0.3 0.5

1.0

3.0

6.0

4

FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.

Frequency, T

A

= 25°C, I

d

= 50 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Power Gain vs. Current.

13

P

1 dB

(dBm)

12

11

10

9

G

p

(dB)

8

7

6

5

–55

–25

+25

NF

G

P

8

7

6

+85

5

+125

P

1 dB

21

18

7.5

7.0

5.5

FREQUENCY (GHz)

TEMPERATURE (°C)

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I

d

=50mA.

Figure 5. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 6. Noise Figure vs. Frequency.

6-336

70 mil Package Dimensions

.040

1.02

4

GROUND

.020

.508

RF INPUT

1

RF OUTPUT

AND BIAS

3

2

GROUND

.004

±

.002

.10

±

.05

.070

1.70

Notes:

(unless otherwise specified)

1. Dimensions are in

mm

2. Tolerances

in .xxx =

±

0.005

mm .xx =

±

0.13

.495

±

.030

12.57

±

.76

.035

.89

6-337