首页 > MSA-0886-TR2G

MSA-0886-TR2G

更新时间：2025-07-09 14:25:29
品牌：AGILENT
描述：Wide Band Low Power Amplifier, 1 Func, BIPolar,

PDF下载

中文翻译

免费 PCB/SMT

MSA-0886-TR2G 概述

Wide Band Low Power Amplifier, 1 Func, BIPolar, 射频/微波放大器

MSA-0886-TR2G 规格参数

是否Rohs认证：符合生命周期：Transferred
包装说明：SL,4GW-LD,.085CIRReach Compliance Code：unknown
风险等级：5.05Is Samacsys：N
特性阻抗：50 Ω构造：COMPONENT
最大输入功率 (CW)：13 dBmJESD-609代码：e3
安装特点：SURFACE MOUNT功能数量：1
端子数量：4封装主体材料：PLASTIC/EPOXY
封装等效代码：SL,4GW-LD,.085CIR电源：7.8 V
射频/微波设备类型：WIDE BAND LOW POWER子类别：RF/Microwave Amplifiers
最大压摆率：40 mA表面贴装：YES
技术：BIPOLAR端子面层：Tin (Sn)
最大电压驻波比：1.9Base Number Matches：1

MSA-0886-TR2G 数据手册

通过下载MSA-0886-TR2G数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Agilent MSA-0886  
Cascadable Silicon Bipolar  
MMIC Amplifier  
Data Sheet  
Features  
• Lead-free Option Available  
• Usable Gain to 5.5 GHz  
• High Gain:  
32.5 dB Typical at 0.1 GHz  
22.5 dB Typical at 1.0 GHz  
Description  
86 Plastic Package  
• Low Noise Figure:  
The MSA-0886 is a high perfor-  
mance silicon bipolar Monolithic  
Microwave Integrated Circuit  
(MMIC) housed in a low cost,  
surface mount plastic package.  
This MMIC is designed for use as a  
general purpose 50 Ω gain block  
above 0.5 GHz and can be used as  
a high gain transistor below this  
frequency. Typical applications  
include narrow and moderate band  
IF and RF amplifiers in commer-  
cial and industrial applications.  
3.3 dB Typical at 1.0 GHz  
• Surface Mount Plastic  
Package  
• Tape-and-Reel Packaging  
Option Available  
• Lead-free Option Available  
Typical Biasing Configuration  
R
bias  
VCC  
> 10 V  
RFC (Optional)  
The MSA-series is fabricated using  
4
Agilent’s 10 GHz f , 25 GHz f  
,
MAX  
T
C
C
block  
block  
silicon bipolar MMIC process  
3
IN  
MSA  
OUT  
1
which uses nitride self-alignment,  
ion implantation, and gold metalli-  
zation to achieve excellent perfor-  
mance, uniformity and reliability.  
The use of an external bias resistor  
for temperature and current  
V
= 7.8 V  
d
2
stability also allows bias flexibility.  
2
MSA-0886 Absolute Maximum Ratings  
Parameter  
Thermal Resistance[2]:  
Absolute Maximum[1]  
θjc = 140°C/W  
Device Current  
Power Dissipation[2,3]  
RF Input Power  
Junction Temperature  
Storage Temperature  
Notes:  
65 mA  
500 mW  
+13 dBm  
150°C  
–65°C to 150°C  
1. Permanent damage may occur if any of these limits are exceeded.  
2. TCASE = 25°C.  
3. Derate at 7.1 mW/°C for TC > 80°C.  
Electrical Specifications[1], TA = 25°C  
Symbol  
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω  
Units Min. Typ. Max.  
GP  
Power Gain (|S21|2)  
f = 0.1 GHz  
f = 1.0 GHz  
dB  
32.5  
22.5  
20.5  
Input VSWR  
f = 0.1 to 3.0 GHz  
f = 0.1 to 3.0 GHz  
f = 1.0 GHz  
2.1:1  
1.9:1  
3.3  
VSWR  
Output VSWR  
NF  
50 Ω Noise Figure  
dB  
dBm  
dBm  
psec  
V
P1 dB  
IP3  
Output Power at 1 dB Gain Compression  
Third Order Intercept Point  
Group Delay  
f = 1.0 GHz  
12.5  
27.0  
140  
f = 1.0 GHz  
tD  
f = 1.0 GHz  
Vd  
Device Voltage  
6.2  
7.8  
9.4  
dV/dT  
Device Voltage Temperature Coefficient  
mV/°C  
–17.0  
Note:  
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current  
is on the following page.  
Ordering Information  
Part Numbers  
MSA-0886-BLK  
MSA-0886-BLKG  
MSA-0886-TR1  
MSA-0886-TR1G  
MSA-0886-TR2  
MSA-0886-TR2G  
No. of Devices  
Comments  
Bulk  
100  
100  
Bulk  
1000  
1000  
4000  
4000  
7" Reel  
7" Reel  
13" Reel  
13" Reel  
Note: Order part number with a “G” suffix if lead-free option  
is desired.  
3
MSA-0886 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)  
S11  
S21  
S12  
S22  
Freq.  
GHz  
Mag  
Ang  
dB  
Mag  
Ang  
dB  
Mag Ang  
Mag  
Ang  
k
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
6.0  
.63  
.56  
.43  
.35  
.30  
.27  
.27  
.31  
.35  
.40  
.45  
.51  
.61  
.68  
–22  
–41  
–69  
32.5  
31.3  
28.6  
26.4  
24.2  
22.4  
19.2  
16.7  
14.8  
12.9  
11.4  
9.9  
42.12 160  
36.68 143  
26.94 119  
20.89 104  
–36.7  
–33.9  
–29.1  
–27.0  
–25.3  
–24.2  
–21.6  
–19.5  
–17.9  
–17.4  
–16.8  
–16.1  
–15.7  
–15.2  
.015  
.020  
.035  
.045  
.054  
.062  
.083  
.105  
.128  
.135  
.145  
.157  
.164  
.173  
54  
50  
52  
49  
50  
49  
46  
41  
36  
30  
25  
19  
10  
4
.62  
.55  
.43  
.34  
.29  
.26  
.23  
.22  
.21  
.20  
.19  
.18  
.17  
.23  
–24  
–46  
–79  
–103  
–124  
–139  
–172  
163  
149  
132  
124  
121  
130  
143  
0.68  
0.64  
0.69  
0.77  
0.83  
0.87  
0.93  
0.96  
0.96  
1.01  
1.02  
1.01  
1.00  
0.95  
–88  
–104  
–116  
–144  
–166  
178  
16.21  
13.20  
9.15  
6.84  
5.50  
4.41  
3.72  
3.14  
93  
83  
65  
49  
38  
25  
13  
1
162  
149  
137  
116  
7.3  
4.6  
2.31 –22  
1.69 –42  
100  
Typical Performance, TA = 25°C  
(unless otherwise noted)  
35  
40  
30  
20  
23  
22  
21  
T
T
T
= +85°C  
= +25°C  
= –25°C  
C
C
C
30  
G
P
P
25  
20  
I
= 36 mA  
d
13  
12  
11  
1 dB  
15  
I
= 20 mA  
d
10  
5
4
3
2
10  
0
NF  
Gain Flat to DC  
0
0.1  
0.3 0.5  
1.0  
3.0 6.0  
–25  
0
+25 +55  
+85  
0
2
4
6
8
10  
FREQUENCY (GHz)  
V
(V)  
TEMPERATURE (°C)  
d
Figure 3. Output Power at 1 dB Gain  
Compression, NF and Power Gain vs.  
Case Temperature, f = 1.0 GHz,  
Id = 36 mA.  
Figure 1. Typical Power Gain vs.  
Frequency, Id = 36 mA.  
Figure 2. Device Current vs. Voltage.  
4.5  
4.0  
16  
I
I
I
= 20 mA  
= 36 mA  
= 40 mA  
d
d
d
I
I
= 40 mA  
= 36 mA  
d
d
14  
12  
3.5  
3.0  
2.5  
10  
8
6
4
I
= 20 mA  
d
0.1  
0.2 0.3 0.5  
1.0  
2.0  
4.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Figure 4. Output Power at 1 dB Gain  
Compression vs. Frequency.  
Figure 5. Noise Figure vs. Frequency.  
86 Plastic Package Dimensions  
0.51 0.13  
(0.020 0.005)  
4
GROUND  
RF OUTPUT  
AND DC BIAS  
45°  
RF INPUT  
C
L
3
1
2.34 0.38  
(0.092 0.015)  
2
GROUND  
2.67 0.38  
(0.105 0.15)  
1.52 0.25  
(0.060 0.010)  
0.203 0.051  
(0.006 0.002)  
5° TYP.  
8° MAX  
0° MIN  
0.66 0.013  
(0.026 0.005)  
2.16 0.13  
(0.085 0.005)  
0.30 MIN  
(0.012 MIN)  
DIMENSIONS ARE IN MILLIMETERS (INCHES)  
www.agilent.com/semiconductors  
For product information and a complete list of  
distributors, please go to our web site.  
For technical assistance call:  
Americas/Canada: +1 (800) 235-0312 or  
(916) 788-6763  
Europe: +49 (0) 6441 92460  
China: 10800 650 0017  
Hong Kong: (65) 6756 2394  
India, Australia, New Zealand: (65) 6755 1939  
Japan: (+81 3) 3335-8152(Domestic/International), or  
0120-61-1280(Domestic Only)  
Korea: (65) 6755 1989  
Singapore, Malaysia, Vietnam, Thailand, Philippines,  
Indonesia: (65) 6755 2044  
Taiwan: (65) 6755 1843  
Data subject to change.  
Copyright © 2005 Agilent Technologies, Inc.  
Obsoletes 5989-2083EN  
April 8, 2005  
5989-2744EN  

MSA-0886-TR2G 相关器件

型号 制造商 描述 价格 文档
MSA-0886G AGILENT 暂无描述 获取价格
MSA-0900 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0900-GP4 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0910 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0986 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0986-BLK AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0986-BLKG AGILENT Wide Band Low Power Amplifier, 100MHz Min, 5500MHz Max, 1 Func, BIPolar, 获取价格
MSA-0986-TR1 AGILENT Cascadable Silicon Bipolar MMIC Amplifier 获取价格
MSA-0986-TR1G AGILENT Wide Band Low Power Amplifier, 100MHz Min, 5500MHz Max, 1 Func, BIPolar, 获取价格
MSA-0986-TR2G AGILENT Wide Band Low Power Amplifier, 100MHz Min, 5500MHz Max, 1 Func, BIPolar, 获取价格

MSA-0886-TR2G 相关文章

  • 小米 AI 眼镜技术亮点：双芯架构助力智能穿戴跨越发展
    2025-07-11
    17
  • AI 芯片风云：台积电能否超越英伟达成新霸主？
    2025-07-11
    14
  • 锁存型霍尔 IC：原理、应用大揭秘
    2025-07-11
    17
  • HBM 角逐：定制化、混合键合等技术成竞争关键
    2025-07-11
    13

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 规格参数
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286