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MSA0886

更新时间：2025-07-09 02:19:29

品牌：AGILENT

描述：Cascadable Silicon Bipolar MMIC Amplifier

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概述
数据手册

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MSA0886 概述

Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大器

MSA0886 数据手册

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Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-0886

Features

Description

86 Plastic Package

• Usable Gain to 5.5 GHz

The MSA-0886 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a low cost,

surface mount plastic package.

This MMIC is designed for use as a

general purpose 50 Ω gain block

above 0.5 GHz and can be used as

a high gain transistor below this

frequency. Typical applications

include narrow and moderate band

IF and RF amplifiers in commer-

cial and industrial applications.

• High Gain:

32.5dBTypicalat0.1 GHz

22.5dBTypicalat1.0 GHz

• Low Noise Figure:

3.3 dBTypicalat1.0 GHz

• Surface Mount Plastic

Package

• Tape-and-Reel Packaging

Option Available^[1]

ion implantation, and gold metalli-

zation to achieve excellent perfor-

mance, uniformity and reliability.

The use of an external bias resistor

for temperature and current

Note:

1. Refer to PACKAGING section “Tape-

and-Reel Packaging for Semiconduc-

tor Devices.”

The MSA-series is fabricated using

HP’s10GHzf ,25 GHzf

MAX

silicon bipolar MMIC process

which uses nitride self-alignment,

stability also allows bias flexibility.

Typical Biasing Configuration

bias

V_CC

> 10 V

RFC (Optional)

block

MSA

OUT

= 7.8 V

5965-9547E

6-426

MSA-0886 Absolute Maximum Ratings

Parameter

AbsoluteMaximum^[1]

Thermal Resistance^[2,4]

Device Current

Power Dissipation^[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Notes:

65 mA

500mW

+13dBm

150°C

θ_jc=140°C/W

–65°C to 150°C

1. Permanent damage may occur if any of these limits are exceeded.

2. T_CASE=25°C.

3. Derate at 7.1 mW/°C for T_C> 80°C.

4. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications^[1], T_A= 25°C

Symbol

Parameters and Test Conditions: I_d= 36 mA, Z_O= 50 Ω

Units Min. Typ. Max.

G_P

PowerGain(|S₂₁|²)

f=0.1GHz

f=1.0GHz

32.5

22.5

20.5

Input VSWR

f=0.1to3.0GHz

f=1.0GHz

2.1:1

1.9:1

3.3

VSWR

Output VSWR

50 Ω Noise Figure

dBm

psec

P_{1 dB}

IP₃

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

f=1.0GHz

12.5

27.0

140

f=1.0GHz

t_D

f=1.0GHz

V_d

Device Voltage

6.2

7.8

9.4

dV/dT

Device Voltage Temperature Coefficient

mV/°C

–17.0

Note:

1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-0886-TR1

MSA-0886-BLK

1000

100

7" Reel

Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-427

MSA-0886 Typical Scattering Parameters^[1](Z_O= 50 Ω, T_A= 25°C, I_d= 36 mA)

S₁₁

S₂₁

S₁₂

S₂₂

Freq.

GHz

Mag

Ang

Mag

Ang

Mag

Ang

Mag

Ang

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5.0

6.0

.63

.56

.43

.35

.30

.27

.31

.35

.40

.45

.51

.61

.68

–22

–41

32.5

31.3

28.6

26.4

24.2

22.4

19.2

16.7

14.8

12.9

11.4

9.9

42.12 160

36.68 143

26.94 119

20.89 104

–36.7

–33.9

–29.1

–27.0

–25.3

–24.2

–21.6

–19.5

–17.9

–17.4

–16.8

–16.1

–15.7

–15.2

.015

.020

.035

.045

.054

.062

.083

.105

.128

.135

.145

.157

.164

.173

.62

.55

.43

.34

.29

.26

.23

.22

.21

.20

.19

.18

.17

.23

–24

–46

–79

0.68

0.64

0.69

0.77

0.83

0.87

0.93

0.96

1.01

1.02

1.01

1.00

0.95

–69

–88

–103

–124

–139

–172

163

–104

–116

–144

–166

178

16.21

13.20

9.15

6.84

5.50

4.41

3.72

3.14

149

162

132

149

124

137

121

116

7.3

2.31 –22

1.69 –42

130

100

4.6

143

Note:

1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, T_A= 25°C

(unless otherwise noted)

= +85°C

= +25°C

= –25°C

= 36 mA

1 dB

= 20 mA

Gain Flat to DC

0.1

0.3 0.5

1.0

3.0 6.0

–25

+25 +55

+85

FREQUENCY (GHz)

(V)

TEMPERATURE (°C)

Figure 3. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I_d=36mA.

Figure 1. Typical Power Gain vs.

Frequency, I_d= 36 mA.

Figure 2. Device Current vs. Voltage.

4.5

4.0

= 20 mA

= 36 mA

= 40 mA

= 36 mA

3.5

3.0

2.5

= 20 mA

0.1

0.2 0.3 0.5

1.0

2.0

4.0

0.1

0.2 0.3 0.5

1.0

2.0

FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 5. Noise Figure vs. Frequency.

6-428

86 Plastic Package Dimensions

0.51 ± 0.13

(0.020 ± 0.005)

GROUND

RF OUTPUT

AND DC BIAS

45°

RF INPUT

2.34 ± 0.38

(0.092 ± 0.015)

GROUND

2.67 ± 0.38

(0.105 ± 0.15)

1.52 ± 0.25

(0.060 ± 0.010)

0.203 ± 0.051

5° TYP.

(0.006 ± 0.002)

8° MAX

0° MIN

0.66 ± 0.013

(0.026 ± 0.005)

2.16 ± 0.13

(0.085 ± 0.005)

0.30 MIN

(0.012 MIN)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

6-429

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