MSA0886 [AGILENT]

Cascadable Silicon Bipolar

MMIC Amplifier

Technical Data

MSA-0886

Features

• Usable Gain to 5.5 GHz

• High Gain:

32.5 dB Typical at 0.1 GHz

22.5 dB Typical at 1.0 GHz

• Low Noise Figure:

3.3 dB Typical at 1.0 GHz

• Surface Mount Plastic

Package

• Tape-and-Reel Packaging

Option Available

[1]

Note:

1. Refer to PACKAGING section “Tape-

and-Reel Packaging for Semiconduc-

tor Devices.”

Description

The MSA-0886 is a high perfor-

mance silicon bipolar Monolithic

Microwave Integrated Circuit

(MMIC) housed in a low cost,

surface mount plastic package.

This MMIC is designed for use as a

general purpose 50

Ω

gain block

above 0.5 GHz and can be used as

a high gain transistor below this

frequency. Typical applications

include narrow and moderate band

IF and RF amplifiers in commer-

cial and industrial applications.

The MSA-series is fabricated using

HP’s 10 GHz f

T

, 25 GHz f

MAX

,

silicon bipolar MMIC process

which uses nitride self-alignment,

86 Plastic Package

ion implantation, and gold metalli-

zation to achieve excellent perfor-

mance, uniformity and reliability.

The use of an external bias resistor

for temperature and current

stability also allows bias flexibility.

Typical Biasing Configuration

R

bias

V

CC

>

10

V

RFC (Optional)

4

C

block

3

IN

1

MSA

C

block

OUT

V

d

= 7.8 V

2

5965-9547E

6-426

MSA-0886 Absolute Maximum Ratings

Parameter

Device Current

Power Dissipation

[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Absolute Maximum

[1]

65 mA

500 mW

+13 dBm

150°C

–65°C to 150°C

Thermal Resistance

[2,4]

:

θ

jc

= 140°C/W

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

CASE

= 25°C.

3. Derate at 7.1 mW/°C for T

C

> 80°C.

4. See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications

[1]

, T

A

= 25°C

Symbol

G

P

Parameters and Test Conditions: I

d

= 36 mA, Z

O

= 50

Ω

Power Gain (|S

21

|

2

)

Input VSWR

Output VSWR

50

Ω

Noise Figure

Output Power at 1 dB Gain Compression

Third Order Intercept Point

Group Delay

Device Voltage

Device Voltage Temperature Coefficient

f = 0.1 GHz

f = 1.0 GHz

f = 0.1 to 3.0 GHz

f = 0.1 to 3.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

f = 1.0 GHz

Units

dB

Min.

20.5

Typ.

32.5

22.5

2.1:1

1.9:1

Max.

VSWR

NF

P

1 dB

IP

3

t

D

V

d

dV/dT

dB

dBm

dBm

psec

V

mV/°C

6.2

3.3

12.5

27.0

140

7.8

–17.0

9.4

Note:

1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number

MSA-0886-TR1

MSA-0886-BLK

No. of Devices

1000

100

Container

7" Reel

Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-427

MSA-0886 Typical Scattering Parameters

[1]

(Z

O

= 50

Ω,

T

A

= 25°C, I

d

= 36 mA)

Freq.

GHz

S

11

Mag

Ang

dB

S

21

Mag

Ang

dB

S

12

Mag

Ang

Mag

S

22

Ang

k

0.1

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5.0

6.0

.63

.56

.43

.35

.30

.27

.27

.31

.35

.40

.45

.51

.61

.68

–22

–41

–69

–88

–104

–116

–144

–166

178

162

149

137

116

100

32.5

31.3

28.6

26.4

24.2

22.4

19.2

16.7

14.8

12.9

11.4

9.9

7.3

4.6

42.12

36.68

26.94

20.89

16.21

13.20

9.15

6.84

5.50

4.41

3.72

3.14

2.31

1.69

160

143

119

104

93

83

65

49

38

25

13

1

–22

–42

–36.7

–33.9

–29.1

–27.0

–25.3

–24.2

–21.6

–19.5

–17.9

–17.4

–16.8

–16.1

–15.7

–15.2

.015

.020

.035

.045

.054

.062

.083

.105

.128

.135

.145

.157

.164

.173

54

50

52

49

50

49

46

41

36

30

25

19

10

4

.62

.55

.43

.34

.29

.26

.23

.22

.21

.20

.19

.18

.17

.23

–24

–46

–79

–103

–124

–139

–172

163

149

132

124

121

130

143

0.68

0.64

0.69

0.77

0.83

0.87

0.93

0.96

0.96

1.01

1.02

1.01

1.00

0.95

Note:

1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

A

= 25°C

(unless otherwise noted)

35

30

25

G

p

(dB)

30

I

d

= 36 mA

I

d

(mA)

T

C

= +85°C

T

C

= +25°C

T

C

= –25°C

Gp (dB)

40

23

22

21

G

P

13

P

1 dB

(dBm)

20

15

10

5

Gain Flat to DC

0

0.1

0.3 0.5

1.0

3.0

6.0

FREQUENCY (GHz)

I

d

= 20 mA

20

P

1 dB

12

11

NF (dB)

10

4

3

2

NF

0

0

2

4

6

V

d

(V)

8

10

–25

0

+25

+55

+85

TEMPERATURE (°C)

Figure 1. Typical Power Gain vs.

Frequency, I

d

= 36 mA.

Figure 2. Device Current vs. Voltage.

Figure 3. Output Power at 1 dB Gain

Compression, NF and Power Gain vs.

Case Temperature, f = 1.0 GHz,

I

d

=36mA.

16

I

d

= 40 mA

14

12

10

8

I

d

= 36 mA

NF (dB)

4.5

4.0

I

d

= 20 mA

I

d

= 36 mA

I

d

= 40 mA

P

1 dB

(dBm)

3.5

3.0

6

I

d

= 20 mA

2.5

0.2 0.3

0.5

1.0

2.0

4.0

0.1

0.2 0.3

0.5

1.0

2.0

FREQUENCY (GHz)

FREQUENCY (GHz)

4

0.1

Figure 4. Output Power at 1 dB Gain

Compression vs. Frequency.

Figure 5. Noise Figure vs. Frequency.

6-428

86 Plastic Package Dimensions

0.51

±

0.13

(0.020

±

0.005)

GROUND

4

RF INPUT

1

A08

45°

RF OUTPUT

AND DC BIAS

C

L

3

2.34

±

0.38

(0.092

±

0.015)

2

GROUND

2.67

±

0.38

(0.105

±

0.15)

1.52

±

0.25

(0.060

±

0.010)

5° TYP.

0.203

±

0.051

(0.006

±

0.002)

0.66

±

0.013

(0.026

±

0.005)

0.30 MIN

(0.012 MIN)

8° MAX

0° MIN

2.16

±

0.13

(0.085

±

0.005)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

6-429