A2323F9VR [AITSEMI]
CLASS-D AUDIO POWER AMPLIFIER;
| 型号： | A2323F9VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | CLASS-D AUDIO POWER AMPLIFIER 放大器 功率放大器 |
| 文件： | 总18页 (文件大小：716K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
DESCRIPTION
FEATURES
Dedicated RNS(RF-TDD Noise Suppression)
technology
The EEE technology is a super reduction
capability in full frequency span EMI
suppression.
Excellent in the “Pop-Click” noise suppression.
High PSRR: -70 dB (217Hz).
Support 1.8V control logic.
The A2323 is TDD suppression, super low EMI,
single channel, class-D audio power amplifier.
The A2323 designed with the dedicated EEE
(Enhanced Emission Elimination) technology,
reducing great EMI jamming in full frequency span
range, relative to 60cm audio cable, with more than
20dB level capability in FCC standard.
0.1% THD+N (0.4W output power, 4.2V power).
1.15W output power(10% THD ,4.2V power,8Ω
load).
The A2323 internal professional timing control circuit,
fully Suppressed the “Pop-Click” sound, can
effectively erase the transient noise during power up,
power down, power weak and power off in system
operation.
High efficiency in 90%.
Low quiescent current (2.6mA).
Low shut down current ( <0.1uA).
Over current protection, hyper thermal
protection.
ESD discharged protection : ±8kV (HBM).
Latch-up : ± 450 mA.
The A2323 internal over current protection function
and thermal protection function, can effectively
protected chip operation form abnormal damage
condition.
Available in FC-9 Package
APPLICATION
The A2323 is available in FC-9 package.
Mobile phone
PDA, GPS, MP3
Portable electronic devices
ORDERING INFORMATION
Package Type
FC-9
Part Number
A2323F9R
F9
A2323F9VR
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 1 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
PIN DESCRIPTION
Top View
Pin #
A1
Symbol
Function
INP
GND
Positive audio signal input
Ground
A2
A3
VON
Negative audio signal output
Simulation power
Power source
B1
AVDD
B2
PVDD
B3
GND
Ground
C1
C2
C3
INN
Negative audio signal input
Shut down
SHUTDOWN
VOP
Positive audio signal output
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 2 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
ABSOLUTE MAXIMUM RATING
V
DD Supply Voltage
-0.3V~6V
-0.3V~VDD+0.3V
90℃/W
INP , INN Pin Voltage
ΘJA, Package Thermal Resistance
Operating Temperature
-40℃~85℃
125℃
T
JMAX, Maximum Operating Temperature
TSTG, Storage Temperature
-65℃~150℃
260℃
Pin Temperature (Soldering in 10 Sec.)
Note1
ESD Range
HBM(Human Body Model)
±8kV
Latch-Up
Test Standard: JEDEC STANDARD NO. 78B DECEMBER 2008
+IT : 450mA
-IT : -450mA
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. There are stress ratings only and
operations of the device at these or any other condition beyond those indicated in the operational section of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: HBM testing method is which the 100pF capacitor electron passing discharged to IC lead pin through a 1.5kΩ resistor. Testing
standards: MIL-STD-883G Method 3015.7
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 3 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
ELECTRICAL CHARACTERISTICS
Test Condition : TA= 25℃(unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Electric Characteristic
Input Voltage Range
VDD
2.5
1.3
0
5.5
VDD
0.35
25
V
V
High-level input VIH
SHUTDOWN
SHUTDOWN
Low-level input
VIL
|VOS|
V
Output offset voltage
Quiescent Current
Shut down Current
Power Supply Rejection
Ratio
VIN=0V，AV=2V/V，VDD=2.5V to 5.5V
VDD=3.6V
5
mV
mA
μA
IQ
2.6
0.1
VDD=3.6V， SHUTDOWN =0V
ISD
PSRR
CMRR
217Hz
-70
-70
dB
dB
Common Mode
Rejection Ratio
Switching frequency
fSW
VDD=2.5V to 5.5V
800
315 kΩ
kHz
V/V
Amplifier Gain
Gain
RIN
Operation Characteristic
THD+N=10%,f=1kHz, RL=4Ω, VDD=5V
THD+N=1%,f=1kHz, RL=4Ω, VDD=5V
THD+N=10%,f=1kHz, RL=8Ω, VDD=5V
THD+N=1%,f=1kHz, RL=8Ω, VDD=5V
THD+N=10%,f=1kHz, RL=4Ω, VDD=4.2V
THD+N=1%,f=1kHz, RL=4Ω, VDD=4.2V
THD+N=10%,f=1kHz, RL=8Ω, VDD=4.2V
THD+N=1%,f=1kHz, RL=8Ω, VDD=4.2V
THD+N=10%,f=1kHz, RL=4Ω, VDD=3.6V
THD+N=1%,f=1kHz, RL=4Ω, VDD=3.6V
THD+N=10%,f=1kHz, RL=8Ω, VDD=3.6V
THD+N=1%,f=1kHz, RL=8Ω, VDD=3.6V
VDD=5V, PO=0.6W, RL=8Ω, f=1kHz
2.65
2.15
1.70
1.35
1.85
1.50
1.15
0.90
1.35
1.05
0.85
0.65
0.1
Output Power
PO
W
%
%
Total Harmonic
THD+N VDD=4.2V, PO=0.4W, RL=8Ω, f=1kHz
VDD=3.6V, PO=0.3W, RL=8Ω, f=1kHz
0.1
Distortion + Noise
0.1
%
Efficiency
Start Time
η
VDD=5V, PO=1W, RL=8Ω, f=1kHz
90
%
tST
40
ms
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 4 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
TYPICAL PERDORMANCE CHARACTERISTICS
1.
3.
5.
EFFICIENCY vs. OUTPUT POWER
OUTPUT POWER vs. SUPPLY VOLTAGE
THD+N vs. OUTPUT POWER
2.
4.
6.
EFFICIENCY vs. OUTPUT POWER
OUTPUT POWER vs. SUPPLY VOLTAGE
THD+N vs. OUTPUT POWER
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 5 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
7.
THD+N vs. FREQUENCY
8.
THD+N vs. FREQUENCY
9.
THD+N vs. FREQUENCY
10. THD+N vs. FREQUENCY
11. THD+N vs. FREQUENCY
12. THD+N vs. FREQUENCY
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 6 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
13. SUPPLY CURRENT vs. SUPPLY VOLTAGE
14. PSRR vs. FREQUENCY
15. CMRR vs. FREQUENCY
16. NOISE FLOOR
17. SYSTEM ON TIMING
18. SYSTEM OFF TIMMING
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 7 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
TYPICAL APPLICATION
1. A2323 Differential INPUT application circuit
2. A2323 Single-ended INPUT application circuit
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
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A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
BLOCK DIAGRAM
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 9 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
Test Method
The A2323 is a class-D power amplifier, which the output wave form was modulated by the PWM square
wave signal. The output port of the power amplifier can be connected with audio signal filter to filter out the
PWM switching frequency energy between the test, obtain Intuitive analog output signal convenient for
analyzing, both differential output port signal loaded to the speaker audio driving signal. The audio filter can
be design by either the AP professional audio analyzer, or simple RC filter, as figure 1.
Figure 1 A2323 Testing Circuit Schematic
Low PASS Filter
Recommended low pass filter resistor, capacitor as below table.
Filter Type
Filter Resistor
R :500Ω
Filter Capacitor
10nF
Low Pass Cut off frequency
32kHz
34kHz
RC Filter
R: 1kΩ
4.7nF
A2323 recommended filter for test
Power Gain calculation
According to the above testing method, an differential signal obtain form the low pass filter output port, using
The oscillation scope to testing the effectively differential analog signal level VO_rms, as Figure 2.
Figure 2 Effectively output signal diagram
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 10 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
The power gain of the power stage to speaker is calculated below: (RL is the speaker load impedance)
(Vo_rms)2
PL=
RL
Operation Theory
The A2323 is Dedicated TDD suppression, super low EMI, single channel, class-D audio power amplifier. The
dedicated RNS (RF-TDD Noise Suppression) technology, superior suppression in RF jamming when cellular
Phone hands-free circuit power conducting and free space radiation, can effectively preventing TDD noise
source. The A2323 dedicated EEE (Enhanced Emission Elimination) technology, reducing great level of EMI
jamming in full frequency span range, for 60cm audio cable, over more than 20dB level in FCC standard.
The A2323 internal professional timing control circuit, fully Suppressed the “Pop-Click” sound, can effectively
Erase the transient noise during power up, power down, power recovery and power off in system operation.
The A2323 internal over current protection function and thermal shutdown protection function, effectively
protected chip operation form abnormal damage condition, when abnormal condition erase, it can recovery
automatically.
The A2323 provide tiny 1.5mmX1.5mm FC-9 package, operating temperature range from -40℃ to 85℃.
RNS (RF-TDD noise Suppression)
TDD Noise origin source:
The GSM cellular phone is using the TDMA (Time Division Multiple Access) time slots sharing technology.
The time slots addressing divided each time to periodical frame, each frame divided into many time slots for
Responding signal from base station, base station transmitting prearranging scheduled time slots signal to
mobile terminal. Each of all these TDMA frames having 8 time slots, the frame periods between 4.615ms,
each time slots periods between 0.577ms.
The standard GSM cellular phone, RF power amplifier transmitted signal each 4.615ms (217Hz), it will
generated periodical burst current and strong radiation. Periodical burst current will created 217Hz power
wavering; The 900MHz or 1800MHz high frequency RF signal generated 217Hz modulation radio frequency.
The 217Hz power wavering will transmitted to audio signal channel through coupling, but the 217Hz
modulated radio frequency signal coupled to audio signal channel through radiation, if lacking better
protection mechanism, then the auditable TDD noise present, which include 217Hz noise and 217Hz
harmonica noise signal.
The RNS technology suppressed the transmission and radiation interference through a comprehensive circuit
structure, effectively increased TDD noise suppression capability.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 11 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
Conducting Noise Suppression
The RF power amplifier operating, abstracting battery current form 217Hz frequency, due to the internal
battery impedance, which will caused 217Hz power wavering, power wavering will passed the audio power
amplifier through coupling to speaker. The capability of power wavering suppression depends on the audio
power amplifier PSRR.
V
V
OUT
AC
PSRR = 20log(
)
DD
AC
Figure 3 Diagram of power voltage and RF signal when GSM operating in Radio Frequency
As full differential amplifier input, output complete complement, theoretical the effect of power wavering
related to the two output signal is the same, the differential output was not affect by the power wavering
completely. In real situation, affect by the manufacturing defect cause, the power amplifier will mismatch in
great deal, the PSRR are greater than -60dB, the -60dB represent 1000 decade of the output signal related to
power wavering, for example of 500mVp power wavering, differential output signal will be 0.5mV, basically
satisfied the need of application. But in the real world application, the PSRR -60dB even -80dB power
amplifier could encounter conducting TDD noise problem, this is why? We still need to consider the
mismatched impedance effect of the audio power amplifier component in this point. For the traditional audio
power amplifier, as input resistance Rin, input capacitor Cin mismatching, affected greatly to audio power
amplifier PSRR index. Consider resistance deviate between ±1%, capacitance deviate between ±10%, even
the power amplifier performance is complete idea in this moment, the hole audio system PSRR theoretical
level remain -30dB no more, affected deeply degrade conducting TDD suppression capability. While power
wavering enhance, easily caused auditable TDD noise. For increasing the audio power amplifier PRSS at the
input resistance, the input capacitance under mismatched condition, A2323 designed with special conducting
noise reduction circuit, which can maintain highly PSRR level when the input resistance, the input
capacitance deviated 10% even more that condition, greatly suppressed conducting noise source.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 12 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
Radiation noise suppression
The input audio signal module layout, output audio signal module layout, speaker driving loop, even the
power net and ground plane could be affect by radiated RF jamming, longer input net layout, output net layout
resembled antenna effect, especially easy affect by RF radiated effect. The reasonable PCB layout design
reducing radiated RF effect, like shorten input net layout, output net layout length; The audio circuit
component stayed away from RF antenna as far as possible and keep shielded from RF antenna; Maintain all
the audio signal channel component integrity; Connect small capacitor to ground in sensitive point to bypass
RF signal. But in practical application, PCB layout hardly full scale evaluate the effect from radiated RF to
audio signal channel, however some RF energy coupling through audio signal channel, become the auditable
TDD noise. The A2323 design with special radiated RF suppression circuit internally, created mask shielding
inside the chip, effectively brocaded High frequency RF energy penetrating the chip, guarantee the power
amplifier speaker output driven signal in affect by antenna RF radiated effect, finally avoided TDD noise from
antenna radiated RF.
Figure 4 Diagram of radiated RF
Filter Less
The A2323 designed with filter less PWM modulation, cut tradition class-D power amplifier LC filter, enhance
the efficiency, provided smaller size, and contributed better cost effect solution.
POP-Click sound suppression
The A2323 embedded with dedicated timing control circuit, present complete the Pop-Click sound
suppressed, effectively erased system power up, power down, power weak and power off operating transient
noise.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 13 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
EEE technology
The A2323 design with dedicated EEE technology, engaging full scale in High Frequency transient skipping
signal, reduced great level EMI jamming in full frequency span range. For 60cm audio cable, over more than
20dB level range in FCC standard, as figure 5 diagrams.
Figure 5 EMI Diagram of testing frequency spectrum
Efficiency
The switching way of output transistor decided the high efficiency of class-D power amplifier. In class-D power
amplifier, the output transistor acting like a current switching regulator, basically switching consumption power
can be neglected in switching process. The main consumption power is generated by the MOSFET
conducting resistance and the I²R created by Power source current. The A2323 efficiency can be achieved
90%.
Automatic protection recovers
While the output pin short with main power or ground, or short between the output lead, over current protected
circuit will shut off the chip for preventing damage. After recovery from shorting circuit, the A2323 was
operating automatically. When the chip operating temperature over the thermal shut down temperature
threshold(160℃), the chip will be shut down. When the operating temperature down to recover temperature
threshold(125℃), the A2323 continue to operating normally.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 14 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
Application Information
Power decoupling capacitor
Excellent power decoupling capacitor can increase power amplifier efficiency and transient characteristic, low
ESR (equivalent-series-resistance) ceramic capacitors X5R or X7R are recommended. Usually
recommended connecting 1uF and 33pF two decupling capacitors to bypass VDD to ground, decupling
capacitor 0.1uF can grantees power amplifier low frequency transient response, but smaller capacitor 33pF
filter out power source radiated RF jamming signal, because capacitor 33pF resonant frequency at RF
frequency range, for 900MHz or 1.8GHz RF frequency jamming provide better filter characteristic. Meanwhile
the decoupling capacitor layout should near the chip VDD layout as near as possible to achieved best filtering
effect.
Input resistance
The A2323 is a full differential structure, designed by differential input and single-ended input, under both
input condition, the input resistance remain the same; through input resistance design can calculate the gain
of the amplifier, equation is below:
2x150kΩ
Gain=
Rin
All explanation stated that increasing the chip PSRR, CMRR, and THD characteristic by better matching
between two input resistors, so recommended designing with 5% accuracy resistor or better resistor. While
PCB layout, resistor should near power amplifier layout, it can prevent noise injecting into high resistance
point.
Input capacitor
Between Input resistance and input capacitance become a high pass filter, the equation of cut off frequency
as below:
1
ƒc =
2πx RinCin
The smaller CIN Capacitor helping filter out 217 Hz input coupling noise, and smaller capacitor decreased
power amplifier power up Pop-Click sound. Better matching between two input capacitor increase chip total
performance and suppressed Pop-Click sound, design 10 % accuracy resistor or better accuracy resistor is
recommended.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 15 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
Bead and Capacitor
The A2323 under lacking bead, capacitor condition, for 60cm audio cable, still can meet FCC standard. For
lengthen audio output signal route and component near EMI sensitive device, design with bead, capacitor is
recommended. The placement of bead and capacitor must as near as possible.
Figure 6 Bead and Capacitor
Bead Recommend Type
The A2323 as class-D power amplifier, output square wave signal, this square wave signal creating switching
current under output filter capacitor, causing static power consumption, so bigger output filter capacitance not
recommended, design with 1nF ceramic capacitor is recommended.
FC Package
The A2323 provide tiny 1.5mm X 1.5mm FC-9 package. The FC package base on advance Flip-Chip
packaging technology, copper plated silver frame (Cu/Ag), Package pad with tin plated layer thickness
between 0.03~0.05mm, capable of mature stable packaging reliability, it has been guaranty the surface
mount process Yield rate.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 16 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
PACKAGE INFORMATION
Dimension in FC-9 (Unit: mm)
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 17 -
A2323
AUDIO AMPLIFIER
AiT Semiconductor Inc.
www.ait-ic.com
2.65W CLASS-D AUDIO POWER AMPLIFIER
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or severed property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV3.0
- MAY 2013 RELEASED, APR 2016 UPDATED -
- 18 -
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