AG2008M8VR-Z [AITSEMI]
MOSFET/IGBT GATE DRIVER;
| 型号： | AG2008M8VR-Z |
| 厂家： | 
AiT Semiconductor |
| 描述： | MOSFET/IGBT GATE DRIVER 栅极驱动 双极性晶体管 |
| 文件： | 总8页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
DESCRIPTION
FEATURES
The AG2008 is a high voltage, high speed power
MOSFET and IGBT driver based on P_SUB P_EPI
process. The floating channel driver can be used to
drive two N-channel power MOSFET or IGBT
independently which operates up to 600V.
Fully operational to +600V
3.3V logic compatible
dV/dt Immunity ±50V/nsec
Floating channel designed for bootstrap
operation
Logic inputs are compatible with standard CMOS or
LSTTL output, down to 3.3V logic. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross -conduction. Propagation
delays are matched to simplify use in high frequency
applications. It has two versions AG2008-A &
AG2008-B.
Gate drive supply range from 10.5V to 20V
UVLO for both channels
Output Source / Sink Current Capability 450mA
/900mA (at Vcc = 15V)
Independent Logic Inputs to Accommodate All
Topologies
-5V negative Vs ability
Matched propagation delay for both channels
Available in a SOP8 package.
AG2008 is available in a SOP8 package.
ORDERING INFORMATION
APPLICATION
Small and medium- power motor driver
Power MOSFET or IGBT driver
Half−Bridge Power Converters
Full-Bridge Power Converters
Any Complementary Drive Converters
Package Type
Part Number
AG2008M8R-Z
AG2008M8VR-Z
V: Halogen free Package
Z: A=LIN; B=
SOP8
M8
SPQ: 4,000pcs/Reel
Note
LIN
R: Tape & Reel
AiT provides all RoHS products
TYPICAL APPLICATION CIRCUIT
REV1.0
- NOV 2017 RELEASED -
- 1 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
PIN DESCRIPTION
Top View
Symbol
VCC
Function
Low side and main power supply
Pin #
1
2
3
4
HIN
Logic input for high side gate driver output (HO)
Logic input for low side gate driver output (LO)
Ground
LIN(
)
LIN
COM
Low side gate drive output
LO
A version: in phase with LIN,
5
B version: out of phase with LIN
High side floating supply return or bootstrap return
High side gate drive output, in phase with HIN
High side floating supply
6
7
8
VS
HO
VB
REV1.0
- NOV 2017 RELEASED -
- 2 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
ABSOLUTE MAXIMUM RATINGS
VB, High Side Floating Supply
-0.3V ~ 622V
VB -22V ~ VB +0.3V
VS -0.3V ~ VB +0.3V
-0.3V ~ 22V
-0.3V ~ VCC +0.3V
-0.3V ~ VCC +0.3V
2.5kV
VS, High Side Floating Supply Return
VHO, High Side Gate Drive Output
VCC, Low Side and Main Power Supply
VLO, Low Side Gate Drive Output
VIN, Logic Input of HIN & LIN
ESD, HBM Model
ESD, Machine Model
200V
PD, Package Power Dissipation @ TA ≤25°C
RthJA, Thermal Resistance Junction to Ambient
TJ, Junction Temperature
SOP8
SOP8
0.625W
200℃/W
150℃
TS, Storage Temperature
-55℃~150℃
TL, Lead Temperature (Soldering, 10 seconds)
300℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
High Side Floating Supply
Symbol
VB
Min.
Max.
Units
V
VS +10.5
VS +20
High Side Floating Supply Return
High Side Gate Drive Output Voltage
Low Side Supply
VS
VHO
VCC
VLO
VIN
TA
-
VS
10.5
0
600
VB
V
V
20
V
Low Side Gate Drive Output Voltage
Logic Input Voltage(HIN & LIN)
Ambient Temperature
VCC
VCC
125
V
0
V
-40
℃
REV1.0
- NOV 2017 RELEASED -
- 3 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
ELECTRICAL CHARACTERISTICS
VBIAS (VCC, VBS) = 15V, CL = 1000pF and TA = 25°C, unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
ns
Dynamic Electrical Characteristics
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Delay Matching
tonH
toffH
tonL
toffL
MT
tr
-
-
-
-
-
-
-
170
170
170
170
-
240
240
240
240
50
Turn-On Rise Time
50
90
Turn-Off Fall Time
tf
30
80
Static Electrical Characteristics
Logic “1”(HIN & LIN) Input Voltage
Logic “0” (HIN & LIN) Input Voltage
High Level Output Voltage, VBIAS - VO
VIH
VIL
2.5
-
-
-
-
-
-
0.8
0.3
V
VOH
Low Level Output Voltage, VO
Quiescent VCC Supply Current
Quiescent VB Supply Current
Leakage Current from VS(600V) to GND
Logic “1” Input Bias Current
Logic “0” Input Bias Current
VOL
IQCC
IQB
-
-
-
-
-
-
-
-
-
-
-
-
-
0.3
160
80
220
150
ILK
-
50
10
2
-
μA
IIN+
IIN-
6
1
VBSU
VBSU
VCCU
+
10.0
9.4
10.0
9.4
450
900
VBS Supply UVLO Threshold
VCC Supply UVLO Threshold
-
-
V
+
-
VCCU
IO+
-
-
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
-
mA
IO-
-
REV1.0
- NOV 2017 RELEASED -
- 4 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
BLOCK DIAGRAM
REV1.0
- NOV 2017 RELEASED -
- 5 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
DETAILED INFORMATION
1. Logic Function
2. Timing Spec
REV1.0
- NOV 2017 RELEASED -
- 6 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm)
Symbol
Min.
-
Max.
1.75
0.225
1.50
0.70
0.48
0.43
0.26
0.21
5.10
6.20
4.10
A
A1
A2
A3
b
b1
c
c1
D
E
E1
e
h
L
0.10
1.30
0.60
0.39
0.38
0.21
0.19
4.70
5.80
3.70
1.27 BSC
1.05 BSC
0.25
0.50
0.50
0.80
L1
θ
0°
8°
REV1.0
- NOV 2017 RELEASED -
- 7 -
AG2008
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
HIGH AND LOW SIDE DRIVER
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- NOV 2017 RELEASED -
- 8 -
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