AG2136M28VR [AITSEMI]
MOSFET/IGBT GATE DRIVER 3-PHASE BRIDGE DRIVER;型号: | AG2136M28VR |
厂家: | AiT Semiconductor |
描述: | MOSFET/IGBT GATE DRIVER 3-PHASE BRIDGE DRIVER 栅极驱动 双极性晶体管 |
文件: | 总10页 (文件大小:678K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
DESCRIPTION
FEATURES
The AG2136 is a high voltage, high speed power
MOSFET and IGBT drivers with a three independent
high and low side referenced output channels for
3-phase applications. The floating channels can be
used to drive N-channel power MOSFETs or IGBTs
in the high side configuration which operates up to
600V. Logic inputs are compatible with CMOS or
LSTTL outputs, down to 3.3V logic. A current trip
function which terminates all six outputs can be
derived from an external current sense resistor. An
enable function is available to terminate all six
outputs simultaneously. An open-drain FAULT signal
is provided to indicate that an over-current or
under-voltage shutdown has occurred. Over-current
fault conditions are cleared automatically after a
delay programmed externally via an RC network
connected to the RCIN input. The output drivers
feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency
applications.
Fully operational to +600V
3.3V logic compatible
dV/dt Immunity ±50V/nsec
Floating channel designed for bootstrap
operation
Gate drive supply range from 10V to 20V
UVLO for all channels
Cross-conduction prevention logic
Over-current shutdown turns off all six drivers
Externally programmable delay for automatic
fault clear
Independent 3 half-bridge drivers
- 6V negative Vs ability
Matched propagation delay for all channels
Available in a SOP28 package.
APPLICATION
Motor Control
Air Conditioners/ Washing Machines
General Purpose Inverters
Micro/Mini Inverter Drives
AG2136 is available in a SOP28 package.
ORDERING INFORMATION
TYPICAL APPLICATION CIRCUIT
Package Type
Part Number
AG2136M28R
SOP28
M28
(wide body)
AG2136M28VR
SPQ: 1,000pcs/Reel
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
REV1.0
- NOV 2017 RELEASED -
- 1 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
PIN DESCRIPTION
Top View
Symbol
VCC
Function
Pin #
1
Low side and logic fixed supply voltage
Signal Input for 1 Phase High-side
Signal Input for 2 Phase High-side
Signal Input for 3 Phase High-side
Signal Input for 1 Phase Low-side
Signal Input for 2 Phase Low-side
Signal Input for 3 Phase Low-side
2
HIN1
HIN2
HIN3
LIN1
3
4
5
6
LIN2
LIN3
7
8
Indicates over-current (ITRIP)or low-side under-voltage lockout
Analog input for overcurrent shutdown.
Logic input to enable I/O functionality
External RC network input used to define FAULT CLEAR delay
Logic ground
FAULT
ITRIP
EN
9
10
11
12
13
14
15
16
18
19
20
RCIN
VSS
COM
LO3
LO2
LO1
VS3
HO3
VB3
Low side gate drivers return
Low side gate driver outputs for 3 Phase
Low side gate driver outputs for 2 Phase
Low side gate driver outputs for 1 Phase
High voltage floating supply return for 3 Phase
High side gate driver outputs for 3 Phase
High side floating supply for 3 Phase
REV1.0
- NOV 2017 RELEASED -
- 2 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
Symbol
Function
Pin #
22
VS2
HO2
VB2
VS1
HO1
VB1
High voltage floating supply return for 2 Phase
High side gate driver outputs for 2 Phase
High side floating supply for 2 Phase
23
24
26
High voltage floating supply return for 1 Phase
High side gate driver outputs for 1 Phase
High side floating supply for 1 Phase
27
28
REV1.0
- NOV 2017 RELEASED -
- 3 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
VB1,2,3, High Side Floating Supply
-0.3V ~ 625V
VB -25V ~ VB +0.3V
VS -0.3V ~ VB +0.3V
-0.3V ~ 25V
VS1,2,3, High Side Floating Supply Return
VHO1,2,3, High Side Gate Drive Output
VCC, Low Side and Main Power Supply
VLO1,2,3, Low Side Gate Drive Output
-0.3V ~ VCC +0.3V
-0.3V ~ VSS +5.5V
VCC -25V ~ VCC +0.3V
VSS -0.3V ~ VCC +0.3V
VSS -0.3V ~ VCC +0.3V
50V/ns
VIN, Logic Input of
&
HIN LIN
COM, Power Ground
VRCIN, RCIN Input Voltage
VFLT,
AFULT Output Voltage
dVS/dt, Allowable Offset Supply Voltage Transient
ESD, HBM Model
2.0kV
ESD, CDM Model
500V
PD, Package Power Dissipation @ TA ≤25°C
RthJA, Thermal Resistance Junction to Ambient
TJ, Junction Temperature
SOP28
SOP28
0.625W
200℃/W
150℃
TS, Storage Temperature
-55℃~150℃
300℃
TL, Lead Temperature (Soldering, 10 seconds)
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
High Side Floating Supply
Symbol
VB1,2,3
Min.
Max.
Units
VS +10
VS +20
High Side Floating Supply Return
High Side Gate Drive Output Voltage
Low Side Supply
VS1,2,3
VHO1,2,3
VCC
-6
VS1,2,3
10
600
VB1,2,3
20
Low Side Gate Drive Output Voltage
VLO1,2,3
VIN
0
VCC
VCC
5
V
Logic Input Voltage(
Logic Ground
&
)
0
HIN LIN
VSS
-5
RCIN Input Voltage
VRCIN
VFLT
VSS
VSS
-40
VCC
VCC
125
Output Voltage
Ambient Temperature
TA
℃
REV1.0
- NOV 2017 RELEASED -
- 4 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS
VBIAS (VCC, VBS) = 15V, CL = 1000pF and TA = 25°C, unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Dynamic
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On rise time
ton
toff
tr
500
500
-
630
630
60
850
850
130
Turn-Off fall time
tf
-
40
90
ENABLE low to output shutdown
propagation delay
tEN
400
625
950
ITRIP to output shutdown propagation
delay
tITRIP
500
750
1200
ITRIP blanking time
tbl
-
350
625
390
300
350
290
-
-
ns
ITRIP to
propagation delay
Negative Pulse
Positive Pulse
tFLT
400
230
150
200
190
-
950
540
460
-
Input filter time
tFLTIN
(
&
)
HIN LIN
Input filter time (EN)
Deadtime
tfilterEN
DT
420
50
Matching delay ON and OFF
Matching delay, max (ton, toff) – min (ton, toff),
(ton, toff are applicable to all 3 channels)
Output pulse width matching
FAULT clear time RCIN: R=2MΩ, C=1nF
Static
MT
MDT
-
-
60
PM
-
-
75
2
tFLTCLR
1.3
1.6
ms
Logic “1”(
&
)Input Voltage
) Input Voltage
VIH
VIL
2.5
-
-
-
-
HIN LIN
Logic “0” (
&
-
-
0.8
2.5
HIN LIN
Enable Positive Going Threshold
Enable Negative Going Threshold
ITRIP Positive Going Threshold
ITRIP Input Hysteresis
VEN,TH+
VEN,TH-
0.8
-
-
0.55
-
VIT,TH
+
0.37
0.46
V
VIT,HYS
-
-
-
-
-
0.06
RCIN Positive Going Threshold
RCIN Input Hysteresis
VRCIN,TH+
8
3
-
-
VRCIN,HYS
VOH
-
High Level Output Voltage, VBIAS - VO
Low Level Output Voltage, VO
0.3
0.3
VOL
-
REV1.0
- NOV 2017 RELEASED -
- 5 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
Parameter
Symbol
VCCUV
VCCUV
VCCUVHY
VBSUV
VBSUV
VBSUVHY
ILK
Conditions
Min
7.8
7.2
0.3
7.8
7.2
0.3
-
Typ.
8.6
8.0
0.6
8.6
8.0
0.6
-
Max
9.8
9.0
-
Units
V
+
VCC Supply UVLO Threshold
-
VCC Supply Under-Voltage Hysteresis
VBS Supply UVLO Threshold
+
9.8
9.0
-
-
VBS supply under-voltage hysteresis
Leakage Current from VS(600V) to GND
Quiescent VB Supply Current
Quiescent VCC Supply Current
Input Clamp Voltage
50
140
3
μA
mA
V
IQBS
-
70
IQCC
-
1.1
VIN,CLAMP
5.5
6
6.55
(HIN,LIN,ITRIP and EN)
Input Bias Current(LOUT=HI)
Input Bias Current(LOUT=LO)
Input Bias Current(HOUT=HI)
Input Bias Current(HOUT=LO)
“High” ITRIP Input Bias Current
“Low” ITRIP Input Bias Current
“High” ENABLE Input Bias Current
“Low” ENABLE Input Bias Current
RCIN Input Bias Current
ILIN
ILIN
IHIN
IHIN
IITRIP
IITRIP
+
-
90
160
90
160
6
150
240
150
240
15
1
-
-
+
-
-
-
+
-
μA
-
-
-
IEN+
IEN-
-
6
15
1
-
-
IRCIN
-
370
600
-
-
1
Output High Short Circuit Pulsed Current
Output Low Short Circuit Pulsed Current
RCIN Low on Resistance
IO+
450
700
30
30
-
mA
IO-
-
Ron_RCIN
Ron_FAULT
80
80
Ω
Low on Resistance
-
REV1.0
- NOV 2017 RELEASED -
- 6 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
BLOCK DIAGRAM
REV1.0
- NOV 2017 RELEASED -
- 7 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
DETAILED INFORMATION
Logic Function & Timing Specification
REV1.0
- NOV 2017 RELEASED -
- 8 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
PACKAGE INFORMATION
Dimension in SOP28 (Unit: mm)
Symbol
Min.
-
Max.
2.65
0.30
2.35
1.07
0.48
0.43
0.31
0.26
18.29
10.50
7.70
A
A1
A2
A3
b
b1
c
c1
D
E
E1
e
L
L1
θ
0.10
2.25
0.97
0.39
0.38
0.25
0.24
17.89
10.10
7.30
1.27 BSC
1.40 BSC
0.70
1.00
0°
8°
REV1.0
- NOV 2017 RELEASED -
- 9 -
AG2136
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET/IGBT GATE DRIVER
3-PHASE BRIDGE DRIVER
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- NOV 2017 RELEASED -
- 10 -
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