AM1013CK3VR [AITSEMI]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM1013CK3VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总8页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
®
The AM1013 is available in SC-89 Package
TrenchFET Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000V
High-Side Switching
Low On-Resistance: 1.2Ω
Low Threshold: 0.8V (typ)
Fast Switching Speed: 14ns
Available in SC-89 Package
ORDERING INFORMATION
Package Type
SC-89
Part Number
BENEFITS
AM1013CK3R
AM1013CK3VR
CK3
Ease in Driving Switches
V: Halogen free Package
R: Tape & Reel
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Note
SPQ: 3,000pcs/Reel
AiT provides all RoHS products
Low Battery Voltage Operation
PIN DESCRIPTION
APPLICATION
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
REV1.0
- DEC 2016 RELEASED -
- 1 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless Otherwise Noted
Parameter
5 secs
Steady State Unit
Symbol
VDS
Drain-Source Voltage
-20
V
V
Gate-Source Voltage
VGS
±6
TA=25°C
TA=85°C
-400
-300
-350
-275
Continuous Drain Current (TJ = 150°C)NOTE2
Pulsed Drain CurrentNOTE1
ID
mA
IDM
IS
-1000
Continuous Source Current (diode conduction)NOTE2
-275
175
90
-250
150
80
TA=25°C
Maximum Power DissipationNOTE2 for SC-75
Maximum Power DissipationNOTE2 for SC-89
PD
PD
TA=85°C
TA=25°C
TA=85°C
mW
275
160
250
140
Operating Junction and Storage Temperature Range
TJ, TSTG
ESD
-55 to150
2000
℃
Gate-Source ESD Rating (HBM, Method 3015)
V
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board.
REV1.0
- DEC 2016 RELEASED -
- 2 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C, Unless Otherwise Noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS=VGS,ID=-250μA
-0.45
-
-
±2
-100
-5
V
VDS=0V, VGS=±4.5V
VDS=-16V, VGS=0V
-
±1
-0.3
-
μA
nA
μA
mA
-
Zero Gate Voltage Drain Current
On-State Drain CurrentaNOTE3
IDSS
VDS=-16V, VGS=0V, TJ=85°C
VDS=-5 V, VGS=-4.5V
VGS=-4.5V, ID=-350mA
VGS=-2.5V, ID=-300mA
VGS=-1.8V, ID=-10mA
VDS=-10V, ID=-250mA
IS=-150mA,VGS=0V
-
ID(on)
-700
-
-
-
-
-
-
-
0.8
1.2
1.8
0.4
-0.8
1.2
1.6
2.7
-
Drain-Source On-State
ResistanceaNOTE3
RDS(on)
Ω
Forward TransconductanceNOTE3
Diode Forward VoltageNOTE3
Dynamic NOTE4
gfs
S
V
VSD
-1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
td(ON)
tr
-
-
-
-
-
-
-
1500
150
450
5
-
-
-
-
-
-
-
VDS=-10V, VGS=-4.5V,
ID=-250mA
pC
ns
VDD=-10V, RL=47Ω,
ID≅-200mA, VGEN=-4.5V,
RG=10Ω
9
Turn-off Delay Time
td(OFF)
35
Fall Time
tf
11
NOTE3: Pulse test: pulse width ≤300us, duty cycle≤ 2%
NOTE4: Guaranteed by design, not subject to production testing.
REV1.0
- DEC 2016 RELEASED -
- 3 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL CHARACTERISTICS
TA = 25°C, Unless Noted. For the following graphs, p-channel negative polarities for all voltage and current
values are represented as positive values.
1. Output Characteristics
3. On-Resistance vs. Drain Current
5. Gate Charge
2. Transfer Characteristics
4. Capacitance
6. On-Resistance vs. Junction Temperature
REV1.0
- DEC 2016 RELEASED -
- 4 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
7. Source-Drain Diode Forward Voltage
9. Threshold Voltage Variance vs. Temperature
11. BVGSS vs. Temperature
8. On-Resistance vs. Gate-to-Source Voltage
10. IGSS vs. Temperature
REV1.0
- DEC 2016 RELEASED -
- 5 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
12. Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
13. Normalized Thermal Transient Impedance, Junction-to-Foot
REV1.0
- DEC 2016 RELEASED -
- 6 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SC-89 (Unit: mm)
MILLIMETERS
INCHES
DIM
MIN
MAX
1.700
0.950
0.800
0.330
MIN
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.500
0.750
0.600
0.230
0.059
0.030
0.024
0.009
0.500 BSC
0.530 REF
0.020 BSC
0.021 REF
0.100
0.200
0.500
0.004
0.008
0.020
K
L
0.300
0.012
1.100 REF
0.043 REF
M
N
S
10°
10°
-
-
10°
10°
-
-
1.500
1.700
0.059
0.067
REV1.0
- DEC 2016 RELEASED -
- 7 -
AM1013
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servers property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- DEC 2016 RELEASED -
- 8 -
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