AM2065HT3U [AITSEMI]
N-CHANNEL SUPER JUNCTION POWER MOSFET;
| 型号： | AM2065HT3U |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL SUPER JUNCTION POWER MOSFET |
| 文件： | 总11页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
DESCRIPTION
FEATURES
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET
fits the industry’s AC-DC SMPS requirements for
PFC, AC/DC power conversion, and industrial
power applications.
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving
requirements
100% Avalanche Tested
Available in TO-220 and TO-220F Packages
The AM2065H is available in TO-220 and TO-220F
packages.
APPLICATIONS
Power factor correctionꢀPFCꢁ
ORDERING INFORMATION
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyꢀUPSꢁ
Package Type
Part Number
TYPICAL APPLICATION
AM2065HT3U
AM2065HT3VU
AM2065HT3FU
AM2065HT3FVU
TO220-3
T3
SPQ: 50pcs/Tube
TO220F-3
T3F
SPQ: 50pcs/Tube
V: Halogen free Package
U: Tube
Note
AiT provides all RoHS products
Schematic diagram
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 1 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
PIN DESCRIPTION
Top View
Top View
Function
Gate
Pin #
Symbol
1
2
3
G
D
S
Drain
Source
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 2 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25°C
VDS, Drain-Source Voltage (VGS=0V)
650V
VGS, Gate-Source Voltage (VDS=0V)
±30V
TO-220
20A
20*A
ID(DC), Continuous Drain Current TC = 25°C
TO-220F
TO-220
12.5A
ID(DC), Continuous Drain Current TC= 100°C
TO-220F
TO-220
12.5*A
60A
IDM(pluse), Pulsed Drain CurrentNOTE1
TO-220F
60*A
dv/dt, Drain Source voltage slope, VDS = 480V, ID = 20A, TJ =125°C
50V/ns
208W
TO-220
PD, Maximum Power Dissipation (TC = 25°C)
TO-220F
34.5W
TO-220
PD, Maximum Power Dissipation Derate above 25°C
TO-220F
1.67W/°C
0.28W/°C
690mJ
EAS, Single Pulse Avalanche EnergyNOTE2
IAR, Avalanche CurrentNOTE1
20A
NOTE1
EAR, Repetitive Avalanche energy, tAR limited by Tjmax
1mJ
TJ, TSTG, Operating Junction and Storage Temperature Range
−55°C ~ +150°C
Stress beyond above listed ꢂAbsolute Maximum Ratingsꢃ may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE: *limited by maximum junction temperature
THERMAL CHARACTERISTIC
Parameter
Symbol
RthJC
Min
Typ
Max Units
TO-220
TO-220F
TO-220
TO-220F
-
-
-
-
-
-
-
-
0.6
Thermal Resistance，Junction-to-Case
°C/W
3.6
62
Thermal Resistance，Junction-to-Ambient
RthJA
°C/W
80
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 3 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted
Parameter
On/off states
Symbol
BVDSS
Conditions
Min
Typ
Max Units
Drain-Source Breakdown Voltage
VGS=0V, IDS=250μA
VDS=600V, VGS=0V, TC=25°C
VDS=600V, VGS=0V,
TC=125°C
650
-
-
-
V
0.05
1
Zero Gate Voltage Drain Current
IDSS
μA
-
-
100
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VDS=0V, VGS=±30V
VDS=VGS, IDS=250μA
VGS=10V IDS=10A
-
2.5
-
-
3
±100
3.5
nA
V
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
160
190
mΩ
Dynamic Characteristics
Forward Transconductance
gfs
VDS=20V, ID=10A
-
-
-
-
-
-
-
-
17.5
2400
180
5.7
55
-
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
VDS=50V, VGS=0V,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
-
pF
-
114
VDS=480V, IDS=20A
VGS=10V
Gate-Source Charge
Gate-Drain Charge
Intrinsic Gate Resistance
Switching times
Qgs
Qgd
RG
11
-
-
nC
22
f = 1 MHz open drain
0.9
Ω
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
10
5
-
-
Turn-on Rise Time
Turn-Off Delay Time
VDD=380V, ID=20A,
ns
RG=3.6Ω,VGS=10V
67
4
100
12
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-Drain Current
(Body Diode)
ISD
-
-
-
-
20
60
A
A
TC=25°C
Pulsed Source-Drain Current
(Body Diode)
ISDM
Forward on voltage
VSD
trr
TJ=25°C, ISD=20A, VGS=0V
-
-
-
-
0.9
500
11
1.3
V
ns
uC
A
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
TJ=25°C,
IF=20A,di/dt=100A/μs
Qrr
Peak Reverse Recovery Current
Irrm
60
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature
NOTE2: TJ=25℃,VDD=50V,VG=10V, RG=25Ω
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 4 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
1.
Safe operating area for TO-220
2.
Safe operating area for TO-220F
3.
Source-Drain Diode Forward Voltage
4.
Output characteristics
5.
Transfer characteristics
6.
Static drain-source on resistance
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 5 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
7.
RDS(ON) vs. Junction Temperature
8.
BVDSS vs. Junction Temperature
9.
Maximum ID vs. Junction Temperature
10. Gate charge waveforms
11. Capacitance
12. Transient Thermal Impedance for TO-220
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 6 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
13. Transient Thermal Impedance for TO-220F
TEST CIRCUIT
1.
Gate charge test circuit & Waveform
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 7 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
2.
Switch Time Test Circuit
3.
Unclamped Inductive Switching Test Circuit & Waveforms
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 8 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
PACKAGE INFORMATION
Dimension in TO-220 Package (Unit: mm)
Millimeters
Inches
Symbol
Min.
4.470
2.520
0.710
1.170
0.330
1.200
10.010
8.500
12.060
Max.
4.670
2.820
0.910
1.370
0.650
1.400
10.350
8.900
12.460
Min.
Max.
0.184
0.111
0.036
0.054
0.026
0.055
0.407
0.350
0.491
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
H
h
L
L1
V
0.176
0.099
0.028
0.046
0.013
0.047
0.394
0.335
0.475
2.540 TYP.
8.440 REF.
0.100 TYP.
0.332 REF.
4.980
2.590
5.180
2.890
0.196
0.102
0.204
0.114
0.000
13.400
3.560
0.300
13.800
3.960
0.000
0.528
0.140
0.012
0.543
0.156
6.060 REF.
6.600 REF.
0.239 REF.
0.260 REF.
I
Φ
3.735
3.935
0.147
0.155
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 9 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
Dimension in TO-220F Package (Unit: mm)
Millimeters
Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
A3
b
b1
b2
c
4.300
4.700
0.169
0.185
1.300 REF.
0.051 REF.
2.800
2.500
0.500
1.100
1.500
0.500
9.960
14.800
3.200
2.900
0.750
1.350
1.750
0.750
10.360
15.200
0.110
0.098
0.020
0.043
0.059
0.020
0.392
0.583
0.126
0.114
0.030
0.053
0.069
0.030
0.408
0.598
D
E
e
F
2.540 TYP.
2.700 REF.
3.500 REF.
0.800 REF.
0.500 REF.
0.100 TYP.
0.106 REF.
0.138 REF.
0.031 REF.
0.020 REF.
Φ
h1
h2
L
L1
L2
28.000
1.700
1.900
28.400
1.900
2.100
1.102
0.067
0.075
1.118
0.075
0.083
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 10 -
AiT Semiconductor Inc.
AM2065H
www.ait-ic.com
MOSFET
N-CHANNEL SUPER JUNCTION POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or server property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.1
- OCT 2018 RELEASED, NOV 2018 UPDATED -
- 11 -
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