AM3015 [AITSEMI]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM3015 |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总9页 (文件大小：728K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM3015 uses advanced trench technology to
provide excellent RDS(ON), This device is suitable for
use as a load switch or in PWM applications.
VDS = -30V, ID = -15A
RDS(ON) < 12mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
The AM3015 is available in SOP8 package.
Available in SOP8 Package
ORDERING INFORMATION
APPLICATION
Package Type
SOP8
Part Number
AM3015M8R
AM3015M8VR
PWM applications
Load switch
M8
Uninterruptible power supply
V: Halogen free Package
R: Tape & Reel
Note
PIN DESCRIPTION
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Schematic diagram
REV1.0
- AUG 2014 RELEASED -
- 1 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Source
Source
Source
Gate
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Drain
Drain
Drain
Drain
REV1.0
- AUG 2014 RELEASED -
- 2 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless otherwise noted
VDS, Drain-Source Voltage
-30V
±20V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
-15A
IDM, Drain Current-Pulsed NOTE1
-80A
PD, Maximum Power Dissipation
3.1W
TJ,TSTG, Operating Junction and Storage Temperature Range
-55℃ ~ 150℃
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Parameter
Symbol
RθJA
MAX
40
Units
Thermal Resistance, Junction-to-Ambient NOTE2
℃/W
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
REV1.0
- AUG 2014 RELEASED -
- 3 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted
Parameter
Off Characteristics
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics NOTE3
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics NOTE4
Input Capacitance
BVDSS
IDSS
VGS=0V, ID=-250μA
VDS=-30V, VGS=0V
VGS=±20V, VDS=0V
-30
-33
-
V
-
-
-
-
-1
μA
nA
IGSS
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS, ID=-250μA
VGS=-10V, ID=-15A
VDS=-5V, ID=-15A
-1.0
-
-1. 5
8.5
-
-2.2
12
-
V
mΩ
S
30
CISS
COSS
CRSS
-
-
-
2900
410
-
-
-
PF
PF
PF
VDS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics NOTE4
Turn-on Delay Time
280
tD(ON)
tR
tD(OFF)
tF
-
-
-
-
-
-
-
15
11
44
21
48
12
14
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-15V,ID=-10A,
VGS=-10V,RGEN=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
VDS=-15V,ID=-10A,
VGS=-10V
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage NOTE3
VSD
VGS=0V, IS=-2A
-
-
-1.2
V
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV1.0
- AUG 2014 RELEASED -
- 4 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
1.
3.
5.
Power Dissipation
2.
4.
6.
Safe Operation Area
Output Characteristics
Drain-Source On-Resistance
Transfer Characteristics
Drain-Source On-Resistance
REV1.0
- AUG 2014 RELEASED -
- 5 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
7.
Rdson vs. Vgs
8.
Capacitance vs. Vds
9.
Gate Charge
10. Source- Drain Diode Forward
11. Normalized Maximum Transient Thermal Impedance
REV1.0
- AUG 2014 RELEASED -
- 6 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DETAILED INFORMATION
Typical Electrical and Thermal Characteristics
Switching Test Circuit
Switching Waveforms
REV1.0
- AUG 2014 RELEASED -
- 7 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOP8 (Unit: mm)
Symbol
Min
Max
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
c
D
E
E1
e
1.270(BSC)
L
0.400
1.270
θ
0°
8°
REV1.0
- AUG 2014 RELEASED -
- 8 -
AM3015
AiT Semiconductor Inc.
MOSFET
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- AUG 2014 RELEASED -
- 9 -
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