AM3424 [AITSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM3424 |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：796K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
The AM3424 is available in SOT-26 Package
30V/7.4A,
RDS(ON)= 17mΩ(max.) @ VGS= 10V
RDS(ON)= 21.5mΩ(max.) @ VGS= 4.5V
Reliable and Rugged
ORDERING INFORMATION
Available in SOT-26 Package
Package Type
SOT-26
Part Number
AM3424E6R
AM3424E6VR
E6
APPLICATION
V: Halogen free Package
R: Tape & Reel
Note
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
AiT provides all RoHS products
Systems.
Suffix “ V “ means Halogen free Package
Load Switch
PIN DESCRIPTION
N-Channel MOSFET
REV1.0
- MAR 2016 RELEASED -
- 1 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1,2,5,6
D
G
S
Drain
Gate
3
4
Source
REV1.0
- MAR 2016 RELEASED -
- 2 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
VDSS, Drain-Source Voltage
30V
±20V
VGSS, Gate-Source Voltage
TA=25°C
TA=70°C
7.4A
IDNOTE1, Continuous Drain Current (VGS=10V)
5.8A
IDMNOTE1, 300μs Pulsed Drain Current (VGS=10V)
IS NOTE1, Diode Continuous Forward Current
TJ, Maximum Junction Temperature
21A
1A
150℃
TSTG, Storage Temperature Range
-55℃~150℃
1.4W
TA=25°C
TA=70°C
t ≤10s
PD NOTE1, Maximum Power Dissipation
0.88W
60℃/W
90℃/W
RθJA NOTE1, Thermal Resistance-Junction to Ambient
Steady State
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Surface Mounted on 1in2 pad area, t ≤10sec.
REV1.0
- MAR 2016 RELEASED -
- 3 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise noted
Parameter
Static Characteristics
Drain-Source Breakdown
Voltage
Symbol
Conditions
Min
30
Typ
-
Max
-
Unit
BVDSS
IDSS
VGS=0V,IDS=250μA
V
Zero Gate Voltage Drain
Current
VDS=24V, VGS=0V
-
-
-
1
30
μA
TJ=85°C
-
1.3
-
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
VGS(th)
IGSS
VDS=VGS, IDS=250μA
VGS=±20V, VDS=0V
VGS=10V,IDS=8A
1.8
-
2.5
V
±100
17
nA
-
14
16.5
RDS(ON)
NOTE2
mΩ
VGS=4.5V,IDS=5A
-
21.5
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic CharacteristicsNOTE3
Gate Resistance
NOTE2
VSD
ISD=1A,VGS=0V
-
-
-
0.73
15
1.1
V
NOTE3
trr
-
-
ns
nC
ISD=8A, dlSD/dt=100A/μs
NOTE3
Qrr
4.2
RG
Ciss
Coss
Crss
td(ON)
tr
VGS=0V,VDS=0V,F=1MHz
2
2.5
760
125
72
9
3.4
Ω
Input Capacitance
630
910
VGS=0V, VDS=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
105
145
pF
57
-
87
-
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
-
9
-
ns
Turn-off Delay Time
Turn-off Fall Time
td(OFF)
tf
-
24
5.5
-
-
-
Gate Charge CharacteristicsNOTE3
Total Gate Charge
Qg
Qg
VDS=15V, VGS=4.5V, IDS=8A
VDS=15V, VGS=10V, IDS=8A
-
-
-
-
-
6
8
Total Gate Charge
14
17
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qgth
Qgs
Qgd
1.3
2.7
2.2
1.6
3.3
2.7
nC
NOTE2: Pulse test: pulse width ≤300μs, duty cycle≤ 2%
NOTE3: Guaranteed by design, not subject to production testing.
REV1.0
- MAR 2016 RELEASED -
- 4 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV1.0
- MAR 2016 RELEASED -
- 5 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV1.0
- MAR 2016 RELEASED -
- 6 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DETAILED INFORMATION
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
REV1.0
- MAR 2016 RELEASED -
- 7 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE INFORMATION
Dimension in SOT-26 (Unit: mm)
Symbol
Min
-
Max
A
A1
A2
b
1.250
0.050
1.200
0.500
0.220
3.100
3.000
1.800
0.000
0.900
0.300
0.080
2.700
2.600
1.400
c
D
E
E1
e
0.950 (BSC)
1.900 (BSC)
e1
L
0.300
0°
0.600
θ
8°
REV1.0
- MAR 2016 RELEASED -
- 8 -
AM3424
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servers property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- MAR 2016 RELEASED -
- 9 -
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