AM4812M8VR [AITSEMI]
30V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM4812M8VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：472K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
DESCRIPTION
FEATURES
The AM4812 is the N-Channel logic enhancement
mode power field effect transistor which is
produced using high cell density. Advanced trench
30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V
30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V
Super high density cell design for extremely low
RDS(ON)
technology to provide excellent RDS(ON)
.
Exceptional on-resistance and Maximum DC
current capability
This high density process is especially tailored to
minimize on-state resistance.
Available in SOP8 Package
The AM4812 is particularly suited for low voltage
application, and low in-line power loss are needed
in a very small outline surface mount package.
APPLICATION
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
The AM4812 is available in SOP8 Package.
ORDERING INFORMATION
N CHANNEL MOSFET
Package Type
SOP8
Part Number
AM4812M8R
AM4812M8VR
M8
R: Tape & Reel
Note
V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
REV1.0
- JUN 2011 RELEASED –
- 1 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
REV1.0
- JUN 2011 RELEASED –
- 2 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise specified
VDSS, Drain-Source Voltage
30V
±20V
VGSS, Gate-Source Voltage
ID, Continuous Drain Current, VGS = 10V NOTE1
IDM, Pulsed Drain Current NOTE2
PD, Power Dissipation
TA=25°C
10A
20A
TA=25°C
TA=70°C
3.2W
2W
TJ, Operation Junction Temperature
TSTG, Storage Temperature Range
-55°C /150°C
-55°C /150°C
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA = 25°C.
NOTE2: The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
THERMAL INFORMATION
Parameter
Symbol
RθJA
Typ
85
Unit
°C/W
°C/W
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
RθJC
48
REV1.0
- JUN 2011 RELEASED –
- 3 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
Static Parameters
Symbol
Conditions
Min
30
Typ
-
Max
-
Unit
V
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250μA
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V
TJ = 55°C
1.0
-
-
-
2.5
±100
1
V
-
-
nA
Zero Gate Voltage Drain
Current
IDSS
µA
-
-
5
On-State Drain Current
ID(ON)
VDS ≧ 5V, VGS = 10V
25
-
-
-
A
VGS = 10V, ID = 7.8A
16
22
20
28
Drain-source On-Resistance
RDS(ON)
mΩ
VGS = 4.5V, ID = 5.8A
-
Source-Drain Diode
Diode Forward Voltage
Dynamic Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VSD
IS = 2A, VGS = 0V
-
0.8
1.2
V
Qg
-
-
-
-
-
7.2
1.6
2
-
-
-
-
-
V
DS = 15V
GS = 10V
QGS
QGD
Ciss
Coss
V
nC
ID = 7.8A
570
80
VDS = 15V
VGS = 0V
pF
nS
f = 1MHz
Crss
-
64
-
td(on)
tr
td(off)
tf
-
-
-
-
4.2
10.2
16
-
-
-
-
V
DD = 15V
GS = 10V
Turn-On Time
Turn-Off Time
V
ID = 5A
RG = 3.3Ω
6.2
REV1.0
- JUN 2011 RELEASED –
- 4 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
TYPICAL CHARACTERISTICS
1. Output Characteristics
3. Drain Source On Resistance
5. Gate Charge
2. Drain-Source On Resistance
4. Gate Threshold Voltage
6. Drain Source On Resistance
REV1.0
- JUN 2011 RELEASED –
- 5 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
7. Source Drain Diode Forward
8. Capacitance
9. Power Dissipation
10. Drain Current
11. Thermal Transient Impedance
REV1.0
- JUN 2011 RELEASED –
- 6 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
PACKAGE INFORMATION
Dimension in SOP8 Package (mm)
Symbol
Min
Max
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
c
D
E
E1
e
1.270(BSC)
L
0.400
0°
1.270
8°
θ
REV1.0
- JUN 2011 RELEASED –
- 7 -
AM4812
AiT Semiconductor Inc.
www.ait-ic.com
30V N-CHANNEL ENHANCEMENT MODE
MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer.
As used herein may
In order to
involve potential risks of death, personal injury, or servere property, or environmental damage.
minimize risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV1.0
- JUN 2011 RELEASED –
- 8 -
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