AM6260J8VR [AITSEMI]

N-CHANNEL ENHANCEMENT MODE;


型号：	AM6260J8VR
厂家：	AiT Semiconductor
描述：	N-CHANNEL ENHANCEMENT MODE
文件：	总9页 (文件大小：985K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION

FEATURES

The AM6260 is available in DFN8(5x6) package.



60V/100A

R_DS(ON)=2.3mΩ(max.)@V_GS=10V

R_DS(ON)=3.4mΩ(max.)@V_GS=4.5V

100% UIS + R_gTested



Reliable and Rugged

Available in DFN8(5x6) Package

ORDERING INFORMATION

APPLICATIONS



Secondary Side Synchronous Rectification.

DC-DC Converter.

Motor Control.

Package Type

Part Number

AM6260J8R

AM6260J8VR

DFN8(5x6)

Load Switching.

SPQ: 4,000pcs/Reel

V: Halogen free Package

R: Tape & Reel

TYPICAL APPLICATION

Note

AiT provides all RoHS products

N-Channel MOSFET

REV1.0

- DEC 2018 RELEASED -

- 1 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Source

Gate

Drain

REV1.0

- DEC 2018 RELEASED -

- 2 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless otherwise noted

V_DSS, Drain-Source Voltage

60V

±20V

V_GSS, Gate-Source Voltage

I_S, Diode Continuous Forward Current

T_C= 25°C

T_C= 100°C

T_C= 25°C

T_C= 100°C

Steady State

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

Steady State

L=0.5mH

100A^NOTE1

400A^NOTE2

250W

I_D, Continuous Drain Current

I_DM, Pulsed Drain Current

P_D, Maximum Power Dissipation

R_θJC, Thermal Resistance-Junction to Case

I_D, Continuous Drain Current

100W

0.5°C/W

21A

17A

2.08W

P_D, Maximum Power Dissipation

1.33W

R_θJA, Thermal Resistance-Junction to Ambient^NOTE3

I_AS, Avalanche Current, Single pulse^NOTE4

E_AS, Avalanche Energy, Single pulse^NOTE4

T_J, Maximum Junction Temperature

60°C/W

36A

L=0.5mH

324mJ

150°C

T_STG, Storage Temperature Range

-55°C ~ 150°C

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

REV1.0

- DEC 2018 RELEASED -

- 3 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

ELECTRICAL CHARACTERISTICS

T_A= 25°C, unless otherwise noted

Parameter

Symbol

Conditions

Min

Typ

Max Units

Static Characteristics

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS=0V, I_DS=250μA

V_DS=48V, V_GS=0V

Zero Gate Voltage Drain Current

μA

T_J=85°C

Gate Threshold Voltage

Gate Leakage Current

V_GS(th)

I_GSS

V_DS=V_GS, I_DS=250μA

V_DS=0V, V_GS=±20V

V_GS=10V I_DS=25A

V_GS=4.5V, I_DS=25A

±100

2.3

3.4

1.9

2.6

Drain-source On-Resistance^NOTE5

R_DS(ON)

mΩ

Diode Characteristics

Diode Forward Voltage^NOTE5

V_SD

t_rr

I_SD=20A, V_GS=0V

0.8

1.3

Reverse Recovery Time

I_SD=25A,

Reverse Recovery Charge

Dynamic Characteristics^NOTE6

Gate Resistance

dl_SD/dt=100A/μs

Q_rr

R_G

C_iss

C_oss

C_rss

t_d(on)

t_r

V_GS=0V,V_DS=0V,f=1MHz

1.0

Input Capacitance

4950 6435

V_GS=0V, V_DS=30V,

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

1000

130

162

180

V_DD=30V, R_L=30Ω,

I_DS=1A, V_GEN=10V,

R_G=6Ω

Turn-off Delay Time

Turn-off Fall Time

t_d(off)

t_f

100

Gate Charge Characteristics^NOTE6

V_DS=30V, V_GS=4.5V,

I_DS=25A

Total Gate Charge

Q_g

Total Gate Charge

Q_g

Q_gs

Q_gd

122

V_DS=30V, V_GS=10V,

I_DS=25A

Gate-Source Charge

Gate-Drain Charge

NOTE1: Current limited by bonding wire.

NOTE2: Pulse width limited by max. junction temperature.

NOTE3: Surface Mounted on 1in²pad area.

NOTE4: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature T_J=25°C).

NOTE5: Pulse test ; pulse width≤300ms, duty cycle≤2%.

NOTE6: Guaranteed by design, not subject to production testing.

REV1.0

- DEC 2018 RELEASED -

- 4 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

TYPICAL ELECTRICAL CHARACTERISTICS

Power Dissipation

Drain Current

Safe Operation Area

Thermal Transient Impedance

Output Characteristics

Drain-Source On Resistance

REV1.0

- DEC 2018 RELEASED -

- 5 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

Gate-Source On Resistance

Gate Threshold Voltage

Drain-Source On Resistance

10. Source-Drain Diode Forward

11. Capacitance

12. Gate Charge

REV1.0

- DEC 2018 RELEASED -

- 6 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

13. Transfer Characteristics

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

REV1.0

- DEC 2018 RELEASED -

- 7 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

PACKAGE INFORMATION

Dimension in DFN8 (Unit: mm)

Millimeters

Inches

Max

Symbol

Min

0.90

0.30

0.19

4.80

3.60

5.90

5.50

Max

1.20

0.51

0.25

5.30

4.40

6.20

5.80

Min

0.035

0.012

0.007

0.189

0.141

0.232

0.217

0.047

0.020

0.010

0.209

0.173

0.244

0.228

0.050BSC

0.012

0.030

0.012

0.030

0.154

1.27BSC

0.05

0.35

0.05

0.35

3.34

0.762

0.30

0.75

0.30

0.75

3.90

0.002

0.014

0.002

0.014

0.131

0.030

REV1.0

- DEC 2018 RELEASED -

- 8 -

AiT Semiconductor Inc.

AM6260

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or server property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV1.0

- DEC 2018 RELEASED -

- 9 -

AM6260J8VR [AITSEMI]

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