AM6401E6R [AITSEMI]

P-CHANNEL ENHANCEMENT MODE MOSFET;


型号：	AM6401E6R
厂家：	AiT Semiconductor
描述：	P-CHANNEL ENHANCEMENT MODE MOSFET
文件：	总9页 (文件大小：556K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION

FEATURES

AM6401 is available in a SOT-26 package.



-30V/-5.1A,

_DS(ON)= 54mΩ(max.) @ V_GS= -10V

_DS(ON)= 65mΩ(max.) @ V_GS= -4.5V

_DS(ON)= 92mΩ(max.) @ V_GS= -2.5V



Super High Dense Cell Design

Reliable and Rugged

Lead Free and Green Devices Available

(RoHS Compliant)



Available in a SOT-26 package.

ORDERING INFORMATION

APPLICATION



Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Systems.

Package Type

SOT-26

Part Number

AM6401E6R

AM6401E6VR

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix “ V “ means Halogen free Package

P-Channel MOSFET

REV1.0

- DEC 2013 RELEASED -

- 1 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

PIN DESCRIPTION

Top View

Pin #

Symbol

Function

Drain

1,2,5,6

Gate

Source

REV1.0

- DEC 2013 RELEASED -

- 2 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

ABSOLUTE MAXIMUM RATINGS

T_A= 25℃, unless otherwise noted

_DSS, Drain-Source Voltage

-30V

±12V

V_GSS, Gate-Source Voltage

T_A=25℃

T_A=70℃

T_A=25℃

T_A=70℃

-5.1A

I_D^NOTE1, Continuous Drain Current

-4.1A

-20.3A

-16.2A

-1A

I_DM^NOTE1, 300μs Pulsed Drain Current

I_S^NOTE1, Diode Continuous Forward Current

T_J, Maximum Junction Temperature

T_STG, Storage Temperature Range

150℃

-55℃~150℃

2.1W

T_A=25^oC

T_A=70℃

t ≤ 10s

P_D^NOTE1, Maximum Power Dissipation

1.3W

60°C/W

R_θJA^NOTE1, Thermal Resistance-Junction to Ambient

Steady state

100°C/W

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

NOTE1: Surface Mounted on 1in²pad area, t ≤ 10sec.

REV1.0

- DEC 2013 RELEASED -

- 3 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

ELECTRICAL CHARACTERISTICS

T_A= 25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS=0V,I_DS=-250μA

-30

-1

V_DS=-24V,V_GS=0V

Zero Gate Voltage Drain Current

μA

T_J=85°C

-30

-1.3

±100

Gate Threshold Voltage

Gate Leakage Current

V_GS(th)

I_GSS

V_DS=V_GS,I_DS=-250μA

V_GS=±12V, V_DS=0V

V_GS=-10V,I_DS=-5.1A

V_GS=-4.5V,I_DS=-4.1A

V_GS=-2.5V,I_DS=-2.7A

ISD=-1A, VGS=0V

-0.5

-0.9

-0.7

R_DS(ON)

NOTE2

Drain-Source On-state Resistance

mΩ

NOTE2

Diode Forward Voltage

Gate Charge Characteristics ^NOTE3

Total Gate Charge

VSD

-1

Q_G

Q_GS

Q_GD

13.6

1.2

V_DS=-15V, V_GS=-10V,

Gate-Source Charge

Gate-Drain Charge

I_DS≡-5.1A

2.0

Dynamic Characteristics ^NOTE3

Gate Resistance

C_ISS

C_OSS

C_RSS

t_D(ON)

t_R

VGS=0V,VDS=0V,F=1MHz

V_GS=0V,

3.6

573

Input Capacitance

Output Capacitance

V_DS=-15V,

Frequency=1.0MHz

Reverse Transfer Capacitance

Turn-on Delay Time

6.9

12.3

V_DD=-15V, R_L=10Ω

I_DS=-1A, V_GEN=-10V,

R_G=6Ω

Turn-on Rise Time

Turn-off Delay Time

t_D(OFF)

t_F

Turn-off Fall Time

Reverse Recovery Time

t_rr

I_F=-5.1A,

dl_SD/dt=100A/μs

Reverse Recovery Charge

Q_rr

NOTE2: Pulse test; pulse width≤ 300μs, duty cycle≤ 2%.

NOTE3: Guaranteed by design, not subject to production testing.

REV1.0

- DEC 2013 RELEASED -

- 4 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

TYPICAL CHARACTERISTICS

1. Power Dissipation

2. Drain Current

3. Safe Operation Area

4. Thermal Transient Impedance

5. Output Characteristics

6. Drain-Source On Resistance

REV1.0

- DEC 2013 RELEASED -

- 5 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

7. Gate-Source On Resistance

8. Gate Threshold Voltage

9. Drain-Source On Resistance

10. Source-Drain Diode Forward

11. Capacitance

12. Gate Charge

REV1.0

- DEC 2013 RELEASED -

- 6 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

DETAILED INFORMATION

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

REV1.0

- DEC 2013 RELEASED -

- 7 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

PACKAGE INFORMATION

Dimension in SOT-26 Package (Unit: mm)

SYMBOL

MIN

MAX

1.250

0.150

1.300

0.500

0.220

3.100

3.000

1.800

0.000

0.900

0.300

0.080

2.700

2.600

1.400

0.950(BSC)

1.900(BSC)

0.300

0°

0.600

8°

REV1.0

- DEC 2013 RELEASED -

- 8 -

AM6401

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

IMPORTANT NOTICE

AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to

discontinue any integrated circuit product or service without notice, and advises its customers to obtain the

latest version of relevant information to verify, before placing orders, that the information being relied on is

current.

AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to

be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT

products in such applications is understood to be fully at the risk of the customer. As used herein may involve

potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize

risks associated with the customer's applications, the customer should provide adequate design and

operating safeguards.

AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT

warrants the performance of its products of the specifications applicable at the time of sale.

REV1.0

- DEC 2013 RELEASED -

- 9 -

AM6401E6R [AITSEMI]

相关型号：

AM6401E6VR

AM6411

AM6411AKCGHAALV

AM6411BKCGHAALV

AM6411BSCGHAALV

AM6412

AM6412AKCGHAALV

AM6412BKCGHAALV

AM6412BSCGHAALV

AM6415

AM6415E6R

AM6415E6VR